These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

199 related items for PubMed ID: 17385931

  • 1. Effects of a shell on the electronic properties of nanowire superlattices.
    Niquet YM.
    Nano Lett; 2007 Apr; 7(4):1105-9. PubMed ID: 17385931
    [Abstract] [Full Text] [Related]

  • 2. Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires.
    Montazeri M, Fickenscher M, Smith LM, Jackson HE, Yarrison-Rice J, Kang JH, Gao Q, Tan HH, Jagadish C, Guo Y, Zou J, Pistol ME, Pryor CE.
    Nano Lett; 2010 Mar 10; 10(3):880-6. PubMed ID: 20131863
    [Abstract] [Full Text] [Related]

  • 3. Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.
    Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y.
    Small; 2006 Mar 10; 2(3):386-9. PubMed ID: 17193056
    [No Abstract] [Full Text] [Related]

  • 4. Effects of gold diffusion on n-type doping of GaAs nanowires.
    Tambe MJ, Ren S, Gradecak S.
    Nano Lett; 2010 Nov 10; 10(11):4584-9. PubMed ID: 20939583
    [Abstract] [Full Text] [Related]

  • 5. InAs/InP radial nanowire heterostructures as high electron mobility devices.
    Jiang X, Xiong Q, Nam S, Qian F, Li Y, Lieber CM.
    Nano Lett; 2007 Oct 10; 7(10):3214-8. PubMed ID: 17867718
    [Abstract] [Full Text] [Related]

  • 6. Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
    Paladugu M, Zou J, Guo YN, Auchterlonie GJ, Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y.
    Small; 2007 Nov 10; 3(11):1873-7. PubMed ID: 17935062
    [No Abstract] [Full Text] [Related]

  • 7. Diameter-dependent electron mobility of InAs nanowires.
    Ford AC, Ho JC, Chueh YL, Tseng YC, Fan Z, Guo J, Bokor J, Javey A.
    Nano Lett; 2009 Jan 10; 9(1):360-5. PubMed ID: 19143505
    [Abstract] [Full Text] [Related]

  • 8. GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy.
    Ouattara L, Mikkelsen A, Sköld N, Eriksson J, Knaapen T, Cavar E, Seifert W, Samuelson L, Lundgren E.
    Nano Lett; 2007 Sep 10; 7(9):2859-64. PubMed ID: 17722945
    [Abstract] [Full Text] [Related]

  • 9. Single GaAs/GaAsP coaxial core-shell nanowire lasers.
    Hua B, Motohisa J, Kobayashi Y, Hara S, Fukui T.
    Nano Lett; 2009 Jan 10; 9(1):112-6. PubMed ID: 19072060
    [Abstract] [Full Text] [Related]

  • 10. Hole subbands in freestanding nanowires: six-band versus eight-band k·p modelling.
    Ravi Kishore VV, Čukarić N, Partoens B, Tadić M, Peeters FM.
    J Phys Condens Matter; 2012 Apr 04; 24(13):135302. PubMed ID: 22392836
    [Abstract] [Full Text] [Related]

  • 11. Fabrication and characterization of three-dimensional InGaAs/GaAs nanosprings.
    Bell DJ, Dong L, Nelson BJ, Golling M, Zhang L, Grützmacher D.
    Nano Lett; 2006 Apr 04; 6(4):725-9. PubMed ID: 16608272
    [Abstract] [Full Text] [Related]

  • 12. GaAs core--shell nanowires for photovoltaic applications.
    Czaban JA, Thompson DA, LaPierre RR.
    Nano Lett; 2009 Jan 04; 9(1):148-54. PubMed ID: 19143502
    [Abstract] [Full Text] [Related]

  • 13. Growth of silver nanowires on GaAs wafers.
    Sun Y.
    Nanoscale; 2011 May 04; 3(5):2247-55. PubMed ID: 21483977
    [Abstract] [Full Text] [Related]

  • 14. Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy.
    Lugani L, Ercolani D, Sorba L, Sibirev NV, Timofeeva MA, Dubrovskii VG.
    Nanotechnology; 2012 Mar 09; 23(9):095602. PubMed ID: 22322330
    [Abstract] [Full Text] [Related]

  • 15. Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy.
    Parkinson P, Joyce HJ, Gao Q, Tan HH, Zhang X, Zou J, Jagadish C, Herz LM, Johnston MB.
    Nano Lett; 2009 Sep 09; 9(9):3349-53. PubMed ID: 19736975
    [Abstract] [Full Text] [Related]

  • 16. Self-directed growth of AlGaAs core-shell nanowires for visible light applications.
    Chen C, Shehata S, Fradin C, LaPierre R, Couteau C, Weihs G.
    Nano Lett; 2007 Sep 09; 7(9):2584-9. PubMed ID: 17696557
    [Abstract] [Full Text] [Related]

  • 17. The scaling of the effective band gaps in indium-arsenide quantum dots and wires.
    Wang F, Yu H, Jeong S, Pietryga JM, Hollingsworth JA, Gibbons PC, Buhro WE.
    ACS Nano; 2008 Sep 23; 2(9):1903-13. PubMed ID: 19206431
    [Abstract] [Full Text] [Related]

  • 18. P-doping mechanisms in catalyst-free gallium arsenide nanowires.
    Dufouleur J, Colombo C, Garma T, Ketterer B, Uccelli E, Nicotra M, Fontcuberta i Morral A.
    Nano Lett; 2010 May 12; 10(5):1734-40. PubMed ID: 20373777
    [Abstract] [Full Text] [Related]

  • 19. Thermal conductance of InAs nanowire composites.
    Persson AI, Koh YK, Cahill DG, Samuelson L, Linke H.
    Nano Lett; 2009 Dec 12; 9(12):4484-8. PubMed ID: 19995087
    [Abstract] [Full Text] [Related]

  • 20. Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires.
    Ford AC, Kumar SB, Kapadia R, Guo J, Javey A.
    Nano Lett; 2012 Mar 14; 12(3):1340-3. PubMed ID: 22268516
    [Abstract] [Full Text] [Related]

    Page: [Next] [New Search]
    of 10.