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Journal Abstract Search

199 related items for PubMed ID: 17385931

  • 21. Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques.
    Eymery J, Rieutord F, Favre-Nicolin V, Robach O, Niquet YM, Fröberg L, Mårtensson T, Samuelson L.
    Nano Lett; 2007 Sep; 7(9):2596-601. PubMed ID: 17722944
    [Abstract] [Full Text] [Related]

  • 22. Suspended mechanical structures based on elastic silicon nanowire arrays.
    Paulo AS, Arellano N, Plaza JA, He R, Carraro C, Maboudian R, Howe RT, Bokor J, Yang P.
    Nano Lett; 2007 Apr; 7(4):1100-4. PubMed ID: 17375964
    [Abstract] [Full Text] [Related]

  • 23. Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.
    Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J.
    Nano Lett; 2007 Apr; 7(4):921-6. PubMed ID: 17335270
    [Abstract] [Full Text] [Related]

  • 24. Shear stress measurements on InAs nanowires by AFM manipulation.
    Bordag M, Ribayrol A, Conache G, Fröberg LE, Gray S, Samuelson L, Montelius L, Pettersson H.
    Small; 2007 Aug; 3(8):1398-401. PubMed ID: 17657751
    [No Abstract] [Full Text] [Related]

  • 25. Direct imaging of the atomic structure inside a nanowire by scanning tunnelling microscopy.
    Mikkelsen A, Sköld N, Ouattara L, Borgström M, Andersen JN, Samuelson L, Seifert W, Lundgren E.
    Nat Mater; 2004 Aug; 3(8):519-23. PubMed ID: 15235596
    [Abstract] [Full Text] [Related]

  • 26. Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctions.
    Gutsche C, Niepelt R, Gnauck M, Lysov A, Prost W, Ronning C, Tegude FJ.
    Nano Lett; 2012 Mar 14; 12(3):1453-8. PubMed ID: 22364406
    [Abstract] [Full Text] [Related]

  • 27. GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)as at MnAs segregation conditions.
    Sadowski J, Dłuzewski P, Kret S, Janik E, Lusakowska E, Kanski J, Presz A, Terki F, Charar S, Tang D.
    Nano Lett; 2007 Sep 14; 7(9):2724-8. PubMed ID: 17718585
    [Abstract] [Full Text] [Related]

  • 28. Band alignment tuning in twin-plane superlattices of semiconductor nanowires.
    Akiyama T, Yamashita T, Nakamura K, Ito T.
    Nano Lett; 2010 Nov 10; 10(11):4614-8. PubMed ID: 20932044
    [Abstract] [Full Text] [Related]

  • 29. Plastic and elastic strain fields in GaAs/Si core-shell nanowires.
    Conesa-Boj S, Boioli F, Russo-Averchi E, Dunand S, Heiss M, Rüffer D, Wyrsch N, Ballif C, Miglio L, Fontcuberta i Morral A.
    Nano Lett; 2014 Nov 10; 14(4):1859-64. PubMed ID: 24564880
    [Abstract] [Full Text] [Related]

  • 30. Self-healing of fractured GaAs nanowires.
    Wang Y, Joyce HJ, Gao Q, Liao X, Tan HH, Zou J, Ringer SP, Shan Z, Jagadish C.
    Nano Lett; 2011 Apr 13; 11(4):1546-9. PubMed ID: 21417399
    [Abstract] [Full Text] [Related]

  • 31. InAs nanowire transistors as gas sensor and the response mechanism.
    Du J, Liang D, Tang H, Gao XP.
    Nano Lett; 2009 Dec 13; 9(12):4348-51. PubMed ID: 19739664
    [Abstract] [Full Text] [Related]

  • 32. GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.
    Tomioka K, Motohisa J, Hara S, Hiruma K, Fukui T.
    Nano Lett; 2010 May 12; 10(5):1639-44. PubMed ID: 20377199
    [Abstract] [Full Text] [Related]

  • 33. An electric current spike linked to nanoscale plasticity.
    Nowak R, Chrobak D, Nagao S, Vodnick D, Berg M, Tukiainen A, Pessa M.
    Nat Nanotechnol; 2009 May 12; 4(5):287-91. PubMed ID: 19421212
    [Abstract] [Full Text] [Related]

  • 34. Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy.
    Konkar A, Lu S, Madhukar A, Hughes SM, Alivisatos AP.
    Nano Lett; 2005 May 12; 5(5):969-73. PubMed ID: 15884904
    [Abstract] [Full Text] [Related]

  • 35. Direct measurement of band edge discontinuity in individual core-shell nanowires by photocurrent spectroscopy.
    Chen G, Sun G, Ding YJ, Prete P, Miccoli I, Lovergine N, Shtrikman H, Kung P, Livneh T, Spanier JE.
    Nano Lett; 2013 Sep 11; 13(9):4152-7. PubMed ID: 23937245
    [Abstract] [Full Text] [Related]

  • 36. Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior.
    Madhukar A, Lu S, Konkar A, Zhang Y, Ho M, Hughes SM, Alivisatos AP.
    Nano Lett; 2005 Mar 11; 5(3):479-82. PubMed ID: 15755098
    [Abstract] [Full Text] [Related]

  • 37. Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
    Joyce HJ, Docherty CJ, Gao Q, Tan HH, Jagadish C, Lloyd-Hughes J, Herz LM, Johnston MB.
    Nanotechnology; 2013 May 31; 24(21):214006. PubMed ID: 23619012
    [Abstract] [Full Text] [Related]

  • 38. Self-replicating twins in nanowires.
    Yuan Z, Nakano A.
    Nano Lett; 2013 Oct 09; 13(10):4925-30. PubMed ID: 24073636
    [Abstract] [Full Text] [Related]

  • 39. Demonstration of Confined Electron Gas and Steep-Slope Behavior in Delta-Doped GaAs-AlGaAs Core-Shell Nanowire Transistors.
    Morkötter S, Jeon N, Rudolph D, Loitsch B, Spirkoska D, Hoffmann E, Döblinger M, Matich S, Finley JJ, Lauhon LJ, Abstreiter G, Koblmüller G.
    Nano Lett; 2015 May 13; 15(5):3295-302. PubMed ID: 25923841
    [Abstract] [Full Text] [Related]

  • 40.
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