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152 related items for PubMed ID: 17455479
1. Magnetic random access memory (MRAM). Zheng Y, Wu Y, Lil K, Qiu J, Han G, Guo Z, Luo P, An L, Liu Z, Wang L, Tan SG, Zong B, Liu B. J Nanosci Nanotechnol; 2007 Jan; 7(1):117-37. PubMed ID: 17455479 [Abstract] [Full Text] [Related]
2. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers. Parkin SS, Kaiser C, Panchula A, Rice PM, Hughes B, Samant M, Yang SH. Nat Mater; 2004 Dec; 3(12):862-7. PubMed ID: 15516928 [Abstract] [Full Text] [Related]
3. Tunneling magnetoresistive heads for magnetic data storage. Mao S. J Nanosci Nanotechnol; 2007 Jan; 7(1):1-12. PubMed ID: 17455473 [Abstract] [Full Text] [Related]
4. Field dependence of switching currents in an exchange biased spin valve. Nguyen HY, Joo SJ, Jung K, Shin KH. J Nanosci Nanotechnol; 2007 Jan; 7(1):344-9. PubMed ID: 17455502 [Abstract] [Full Text] [Related]
6. Simulation-based comparison of cell design concepts for phase change random access memory. Kim DH, Merget F, Först M, Kurz H. J Nanosci Nanotechnol; 2007 Jan; 7(1):298-305. PubMed ID: 17455495 [Abstract] [Full Text] [Related]
7. Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch-2 density. Lee W, Han H, Lotnyk A, Schubert MA, Senz S, Alexe M, Hesse D, Baik S, Gösele U. Nat Nanotechnol; 2008 Jul; 3(7):402-7. PubMed ID: 18654563 [Abstract] [Full Text] [Related]
9. Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory. Park IS, Lee JH, Lee S, Ahn J. J Nanosci Nanotechnol; 2007 Nov; 7(11):4139-42. PubMed ID: 18047136 [Abstract] [Full Text] [Related]
10. Integrated head design using a nanobeak antenna for thermally assisted magnetic recording. Matsumoto T, Akagi F, Mochizuki M, Miyamoto H, Stipe B. Opt Express; 2012 Aug 13; 20(17):18946-54. PubMed ID: 23038534 [Abstract] [Full Text] [Related]
11. MEMS-based probe recording technology. Yang J. J Nanosci Nanotechnol; 2007 Jan 13; 7(1):181-92. PubMed ID: 17455483 [Abstract] [Full Text] [Related]
12. Memory effects based on random networks of single-walled carbon nanotubes. Lee KW, Heo KY, Kim KM, Kim HJ. Nanotechnology; 2009 Oct 07; 20(40):405210. PubMed ID: 19752496 [Abstract] [Full Text] [Related]
13. Nanoscale ferroelectric information storage based on scanning nonlinear dielectric microscopy. Cho Y. J Nanosci Nanotechnol; 2007 Jan 07; 7(1):105-16. PubMed ID: 17455478 [Abstract] [Full Text] [Related]
14. Novel HDD-type SNDM ferroelectric data storage system aimed at high-speed data transfer with single probe operation. Hiranaga Y, Uda T, Kurihashi Y, Tanaka K, Cho Y. IEEE Trans Ultrason Ferroelectr Freq Control; 2007 Dec 07; 54(12):2523-8. PubMed ID: 18276549 [Abstract] [Full Text] [Related]