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Journal Abstract Search

121 related items for PubMed ID: 17455495

  • 1. Simulation-based comparison of cell design concepts for phase change random access memory.
    Kim DH, Merget F, Först M, Kurz H.
    J Nanosci Nanotechnol; 2007 Jan; 7(1):298-305. PubMed ID: 17455495
    [Abstract] [Full Text] [Related]

  • 2. Nanophase change for data storage applications.
    Shi LP, Chong TC.
    J Nanosci Nanotechnol; 2007 Jan; 7(1):65-93. PubMed ID: 17455476
    [Abstract] [Full Text] [Related]

  • 3. Magnetic random access memory (MRAM).
    Zheng Y, Wu Y, Lil K, Qiu J, Han G, Guo Z, Luo P, An L, Liu Z, Wang L, Tan SG, Zong B, Liu B.
    J Nanosci Nanotechnol; 2007 Jan; 7(1):117-37. PubMed ID: 17455479
    [Abstract] [Full Text] [Related]

  • 4. Simulation study on heat conduction of a nanoscale phase-change random access memory cell.
    Kim J, Song KB.
    J Nanosci Nanotechnol; 2006 Nov; 6(11):3474-8. PubMed ID: 17252792
    [Abstract] [Full Text] [Related]

  • 5. Defect-tolerant architectures for nanoelectronic crossbar memories.
    Strukov DB, Likharev KK.
    J Nanosci Nanotechnol; 2007 Jan; 7(1):151-67. PubMed ID: 17455481
    [Abstract] [Full Text] [Related]

  • 6. MEMS-based probe recording technology.
    Yang J.
    J Nanosci Nanotechnol; 2007 Jan; 7(1):181-92. PubMed ID: 17455483
    [Abstract] [Full Text] [Related]

  • 7. Silicon nanocrystal memories: a status update.
    Compagnoni CM, Gusmeroli R, Ielmini D, Spinelli AS, Lacaita AL.
    J Nanosci Nanotechnol; 2007 Jan; 7(1):193-205. PubMed ID: 17455484
    [Abstract] [Full Text] [Related]

  • 8. Potential for enlarging DNA memory: the validity of experimental operations of scaled-up nested primer molecular memory.
    Kashiwamura S, Yamamoto M, Kameda A, Shiba T, Ohuchi A.
    Biosystems; 2005 Apr; 80(1):99-112. PubMed ID: 15740839
    [Abstract] [Full Text] [Related]

  • 9. Field dependence of switching currents in an exchange biased spin valve.
    Nguyen HY, Joo SJ, Jung K, Shin KH.
    J Nanosci Nanotechnol; 2007 Jan; 7(1):344-9. PubMed ID: 17455502
    [Abstract] [Full Text] [Related]

  • 10. Two-dimensional ultrahigh-density X-ray optical memory.
    Bezirganyan HP, Bezirganyan SE, Bezirganyan HH, Bezirganyan PH.
    J Nanosci Nanotechnol; 2007 Jan; 7(1):306-15. PubMed ID: 17455496
    [Abstract] [Full Text] [Related]

  • 11. Solution-phase deposition and nanopatterning of GeSbSe phase-change materials.
    Milliron DJ, Raoux S, Shelby RM, Jordan-Sweet J.
    Nat Mater; 2007 May; 6(5):352-6. PubMed ID: 17417642
    [Abstract] [Full Text] [Related]

  • 12. Optical response of photopolymer materials for holographic data storage applications.
    Sheridan JT, Gleeson MR, Close CE, Kelly JV.
    J Nanosci Nanotechnol; 2007 Jan; 7(1):232-42. PubMed ID: 17455487
    [Abstract] [Full Text] [Related]

  • 13. Computational models in nano-bioelectronics: simulation of ionic transport in voltage operated channels.
    Longaretti M, Marino G, Chini B, Jerome JW, Sacco R.
    J Nanosci Nanotechnol; 2008 Jul; 8(7):3686-94. PubMed ID: 19051926
    [Abstract] [Full Text] [Related]

  • 14. Si-Sb-Te materials for phase change memory applications.
    Rao F, Song Z, Ren K, Zhou X, Cheng Y, Wu L, Liu B.
    Nanotechnology; 2011 Apr 08; 22(14):145702. PubMed ID: 21346305
    [Abstract] [Full Text] [Related]

  • 15. A coherent grid traversal approach to visualizing particle-based simulation data.
    Gribble CP, Ize T, Kensler A, Wald I, Parker SG.
    IEEE Trans Vis Comput Graph; 2007 Apr 08; 13(4):758-68. PubMed ID: 17495335
    [Abstract] [Full Text] [Related]

  • 16. Advanced modeling techniques for micromagnetic systems.
    Jalil MB, Tan SG, Cheng XZ.
    J Nanosci Nanotechnol; 2007 Jan 08; 7(1):46-64. PubMed ID: 17455475
    [Abstract] [Full Text] [Related]

  • 17. Performance of silicon nanocrystal non-volatile memory devices under various programming mechanisms.
    Ng CY, Chenl TP, Wong JI, Yang M, Khor TS, New CL, Li CM, Trigg AD, Li S.
    J Nanosci Nanotechnol; 2007 Jan 08; 7(1):329-34. PubMed ID: 17455499
    [Abstract] [Full Text] [Related]

  • 18. Experimental study of single-electron phenomena in silicon nanocrystal memories.
    Pace C, Crupi F, Corso D, Lombardo S.
    J Nanosci Nanotechnol; 2007 Jan 08; 7(1):322-8. PubMed ID: 17455498
    [Abstract] [Full Text] [Related]

  • 19. Image modeling using interscale phase properties of complex wavelet coefficients.
    Miller M, Kingsbury N.
    IEEE Trans Image Process; 2008 Sep 08; 17(9):1491-9. PubMed ID: 18701389
    [Abstract] [Full Text] [Related]

  • 20. Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory.
    Park IS, Lee JH, Lee S, Ahn J.
    J Nanosci Nanotechnol; 2007 Nov 08; 7(11):4139-42. PubMed ID: 18047136
    [Abstract] [Full Text] [Related]

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