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Journal Abstract Search

136 related items for PubMed ID: 17455499

  • 1. Performance of silicon nanocrystal non-volatile memory devices under various programming mechanisms.
    Ng CY, Chenl TP, Wong JI, Yang M, Khor TS, New CL, Li CM, Trigg AD, Li S.
    J Nanosci Nanotechnol; 2007 Jan; 7(1):329-34. PubMed ID: 17455499
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  • 4. Nonvolatile memory devices with NiSi2/CoSi2 nanocrystals.
    Yeh PH, Chen LJ, Liu PT, Wang DY, Chang TC.
    J Nanosci Nanotechnol; 2007 Jan; 7(1):339-43. PubMed ID: 17455501
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  • 5. Silicon nanocrystal memories: a status update.
    Compagnoni CM, Gusmeroli R, Ielmini D, Spinelli AS, Lacaita AL.
    J Nanosci Nanotechnol; 2007 Jan; 7(1):193-205. PubMed ID: 17455484
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  • 6. A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement.
    Kim J, Son D, Lee M, Song C, Song JK, Koo JH, Lee DJ, Shim HJ, Kim JH, Lee M, Hyeon T, Kim DH.
    Sci Adv; 2016 Jan; 2(1):e1501101. PubMed ID: 26763827
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  • 7. Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties.
    Lee JS, Cho J, Lee C, Kim I, Park J, Kim YM, Shin H, Lee J, Caruso F.
    Nat Nanotechnol; 2007 Dec; 2(12):790-5. PubMed ID: 18654433
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  • 9. The characterization of a single discrete bionanodot for memory device applications.
    Miura A, Tanaka R, Uraoka Y, Matsukawa N, Yamashita I, Fuyuki T.
    Nanotechnology; 2009 Mar 25; 20(12):125702. PubMed ID: 19420479
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  • 10. Metal-free silicon-molecule-nanotube testbed and memory device.
    He J, Chen B, Flatt AK, Stephenson JJ, Doyle CD, Tour JM.
    Nat Mater; 2006 Jan 25; 5(1):63-8. PubMed ID: 16327789
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  • 12. Programmable polymer thin film and non-volatile memory device.
    Ouyang J, Chu CW, Szmanda CR, Ma L, Yang Y.
    Nat Mater; 2004 Dec 25; 3(12):918-22. PubMed ID: 15568028
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  • 14. Highly scalable non-volatile and ultra-low-power phase-change nanowire memory.
    Lee SH, Jung Y, Agarwal R.
    Nat Nanotechnol; 2007 Oct 25; 2(10):626-30. PubMed ID: 18654387
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  • 15. Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition.
    Perálvarez M, Barreto J, Carreras J, Morales A, Navarro-Urrios D, Lebour Y, Domínguez C, Garrido B.
    Nanotechnology; 2009 Oct 07; 20(40):405201. PubMed ID: 19738295
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  • 16. Quantitative evaluation of boron-induced disorder in multilayers containing silicon nanocrystals in an oxide matrix designed for photovoltaic applications.
    Zatryb G, Podhorodecki A, Hao XJ, Misiewicz J, Shen YS, Green MA.
    Opt Express; 2010 Oct 11; 18(21):22004-9. PubMed ID: 20941101
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  • 17. Molecular memory based on nanowire-molecular wire heterostructures.
    Li C, Lei B, Fan W, Zhang D, Meyyappan M, Zhou C.
    J Nanosci Nanotechnol; 2007 Jan 11; 7(1):138-50. PubMed ID: 17455480
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  • 18. Polyoxometalate-based layered structures for charge transport control in molecular devices.
    Douvas AM, Makarona E, Glezos N, Argitis P, Mielczarski JA, Mielczarski E.
    ACS Nano; 2008 Apr 11; 2(4):733-42. PubMed ID: 19206605
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  • 19. Fabrication of magnetic nanodot arrays for patterned magnetic recording media.
    Sato H, Homma T.
    J Nanosci Nanotechnol; 2007 Jan 11; 7(1):225-31. PubMed ID: 17455486
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  • 20. CMOS-compatible fabrication of room-temperature single-electron devices.
    Ray V, Subramanian R, Bhadrachalam P, Ma LC, Kim CU, Koh SJ.
    Nat Nanotechnol; 2008 Oct 11; 3(10):603-8. PubMed ID: 18838999
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