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Journal Abstract Search

192 related items for PubMed ID: 17516681

  • 1. Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.
    Hsin CL, He JH, Lee CY, Wu WW, Yeh PH, Chen LJ, Wang ZL.
    Nano Lett; 2007 Jun; 7(6):1799-803. PubMed ID: 17516681
    [Abstract] [Full Text] [Related]

  • 2. Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy.
    Fuhrmann B, Leipner HS, Höche HR, Schubert L, Werner P, Gösele U.
    Nano Lett; 2005 Dec; 5(12):2524-7. PubMed ID: 16351208
    [Abstract] [Full Text] [Related]

  • 3. Wafer-scale synthesis of single-crystal zigzag silicon nanowire arrays with controlled turning angles.
    Chen H, Wang H, Zhang XH, Lee CS, Lee ST.
    Nano Lett; 2010 Mar 10; 10(3):864-8. PubMed ID: 20104856
    [Abstract] [Full Text] [Related]

  • 4. Fabrication of suspended silicon nanowire arrays.
    Lee KN, Jung SW, Shin KS, Kim WH, Lee MH, Seong WK.
    Small; 2008 May 10; 4(5):642-8. PubMed ID: 18431721
    [Abstract] [Full Text] [Related]

  • 5. Block copolymers: nanowire arrays build themselves.
    Black CT.
    Nat Nanotechnol; 2007 Aug 10; 2(8):464-5. PubMed ID: 18654339
    [No Abstract] [Full Text] [Related]

  • 6. Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass.
    Zimmler MA, Stichtenoth D, Ronning C, Yi W, Narayanamurti V, Voss T, Capasso F.
    Nano Lett; 2008 Jun 10; 8(6):1695-9. PubMed ID: 18462004
    [Abstract] [Full Text] [Related]

  • 7. Controlled growth of Si nanowire arrays for device integration.
    Hochbaum AI, Fan R, He R, Yang P.
    Nano Lett; 2005 Mar 10; 5(3):457-60. PubMed ID: 15755094
    [Abstract] [Full Text] [Related]

  • 8. A simple route to growth of silicon nanowires.
    Pan H, Ni Z, Poh C, Feng YP, Lin J, Shen Z.
    J Nanosci Nanotechnol; 2008 Nov 10; 8(11):5787-90. PubMed ID: 19198306
    [Abstract] [Full Text] [Related]

  • 9. III-V nanowire growth mechanism: V/III ratio and temperature effects.
    Dayeh SA, Yu ET, Wang D.
    Nano Lett; 2007 Aug 10; 7(8):2486-90. PubMed ID: 17608541
    [Abstract] [Full Text] [Related]

  • 10. Doping limits of grown in situ doped silicon nanowires using phosphine.
    Schmid H, Björk MT, Knoch J, Karg S, Riel H, Riess W.
    Nano Lett; 2009 Jan 10; 9(1):173-7. PubMed ID: 19099512
    [Abstract] [Full Text] [Related]

  • 11. Fabrication of flexible and vertical silicon nanowire electronics.
    Weisse JM, Lee CH, Kim DR, Zheng X.
    Nano Lett; 2012 Jun 13; 12(6):3339-43. PubMed ID: 22594496
    [Abstract] [Full Text] [Related]

  • 12. High electron mobility InAs nanowire field-effect transistors.
    Dayeh SA, Aplin DP, Zhou X, Yu PK, Yu ET, Wang D.
    Small; 2007 Feb 13; 3(2):326-32. PubMed ID: 17199246
    [Abstract] [Full Text] [Related]

  • 13. The temperature-controlled growth of In2O3 nanowires, nanotowers and ultra-long layered nanorods.
    Singh N, Zhang T, Lee PS.
    Nanotechnology; 2009 May 13; 20(19):195605. PubMed ID: 19420644
    [Abstract] [Full Text] [Related]

  • 14. Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
    Paladugu M, Zou J, Guo YN, Auchterlonie GJ, Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y.
    Small; 2007 Nov 13; 3(11):1873-7. PubMed ID: 17935062
    [No Abstract] [Full Text] [Related]

  • 15. Ordered arrays of <100>-oriented silicon nanorods by CMOS-compatible block copolymer lithography.
    Zschech D, Kim DH, Milenin AP, Scholz R, Hillebrand R, Hawker CJ, Russell TP, Steinhart M, Gösele U.
    Nano Lett; 2007 Jun 13; 7(6):1516-20. PubMed ID: 17530809
    [Abstract] [Full Text] [Related]

  • 16. Self-assembly of copper micro/nanoscale parallel wires by electrodeposition on a silicon substrate.
    Zhang M, Zuo G, Zong Z, Cheng H, He Z, Yang C, Zou G.
    Small; 2006 Jun 13; 2(6):727-31. PubMed ID: 17193112
    [No Abstract] [Full Text] [Related]

  • 17. Significant reduction of thermal conductivity in Si/Ge core-shell nanowires.
    Hu M, Giapis KP, Goicochea JV, Zhang X, Poulikakos D.
    Nano Lett; 2011 Feb 09; 11(2):618-23. PubMed ID: 21141989
    [Abstract] [Full Text] [Related]

  • 18. Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy.
    Calarco R, Meijers RJ, Debnath RK, Stoica T, Sutter E, Lüth H.
    Nano Lett; 2007 Aug 09; 7(8):2248-51. PubMed ID: 17602537
    [Abstract] [Full Text] [Related]

  • 19. Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions.
    Fakhr A, Haddara YM, Lapierre RR.
    Nanotechnology; 2010 Apr 23; 21(16):165601. PubMed ID: 20348594
    [Abstract] [Full Text] [Related]

  • 20. Self-catalytic synthesis and photoluminescence property of cluster-like CdSiO3 nanowire arrays.
    Shi J, Jiang Y, Li G, Wang C, Li N.
    J Nanosci Nanotechnol; 2008 Nov 23; 8(11):5825-30. PubMed ID: 19198312
    [Abstract] [Full Text] [Related]

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