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PUBMED FOR HANDHELDS

Journal Abstract Search


274 related items for PubMed ID: 17685312

  • 1.
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  • 2. InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.
    Fu Y, Wang SM, Ferdos F, Sadeghi M, Larsson A.
    J Nanosci Nanotechnol; 2002; 2(3-4):421-6. PubMed ID: 12908273
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  • 4. Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces.
    Wu J, Wang ZM, Dorogan VG, Li S, Mazur YI, Salamo GJ.
    Nanoscale; 2011 Apr; 3(4):1485-8. PubMed ID: 21384043
    [Abstract] [Full Text] [Related]

  • 5. Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.
    Tanabe K, Guimard D, Bordel D, Iwamoto S, Arakawa Y.
    Opt Express; 2010 May 10; 18(10):10604-8. PubMed ID: 20588912
    [Abstract] [Full Text] [Related]

  • 6. Morphology and composition of InAs/GaAs quantum dots.
    Heun S, Biasiol G, Grillo V, Carlino E, Sorba L, Golinelli GB, Locatelli A, Mentes TO, Guo FZ.
    J Nanosci Nanotechnol; 2007 Jun 10; 7(6):1721-5. PubMed ID: 17654929
    [Abstract] [Full Text] [Related]

  • 7. High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability.
    Cao Y, Ji H, Xu P, Gu Y, Ma W, Yang T.
    Opt Lett; 2012 Oct 01; 37(19):4071-3. PubMed ID: 23027282
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  • 8. Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.
    Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y.
    Small; 2006 Mar 01; 2(3):386-9. PubMed ID: 17193056
    [No Abstract] [Full Text] [Related]

  • 9. Filling of hole arrays with InAs quantum dots.
    Lee JY, Noordhoek MJ, Smereka P, McKay H, Millunchick JM.
    Nanotechnology; 2009 Jul 15; 20(28):285305. PubMed ID: 19546494
    [Abstract] [Full Text] [Related]

  • 10. Comparative magneto-photoluminescence study of ensembles and of individual InAs quantum dots.
    Moskalenko ES, Larsson LA, Larsson M, Holtz PO, Schoenfeld WV, Petroff PM.
    Nano Lett; 2009 Jan 15; 9(1):353-9. PubMed ID: 19072126
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  • 13. Leveraging crystal anisotropy for deterministic growth of InAs quantum dots with narrow optical linewidths.
    Yakes MK, Yang L, Bracker AS, Sweeney TM, Brereton PG, Kim M, Kim CS, Vora PM, Park D, Carter SG, Gammon D.
    Nano Lett; 2013 Oct 09; 13(10):4870-5. PubMed ID: 23987910
    [Abstract] [Full Text] [Related]

  • 14. Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.
    Trevisi G, Seravalli L, Frigeri P, Franchi S.
    Nanotechnology; 2009 Oct 14; 20(41):415607. PubMed ID: 19762951
    [Abstract] [Full Text] [Related]

  • 15. Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures.
    Liu XQ, Lu W, Shen SC, Tan HH, Jagadish C, Zou J.
    J Nanosci Nanotechnol; 2001 Dec 14; 1(4):389-92. PubMed ID: 12914079
    [Abstract] [Full Text] [Related]

  • 16. Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.
    Yu Y, Li MF, He JF, He YM, Wei YJ, He Y, Zha GW, Shang XJ, Wang J, Wang LJ, Wang GW, Ni HQ, Lu CY, Niu ZC.
    Nano Lett; 2013 Apr 10; 13(4):1399-404. PubMed ID: 23464836
    [Abstract] [Full Text] [Related]

  • 17. Comparative study of low temperature growth of InAs and InMnAs quantum dots.
    Placidi E, Zallo E, Arciprete F, Fanfoni M, Patella F, Balzarotti A.
    Nanotechnology; 2011 May 13; 22(19):195602. PubMed ID: 21430313
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  • 18. In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires.
    Heiss M, Ketterer B, Uccelli E, Morante JR, Arbiol J, Fontcuberta i Morral A.
    Nanotechnology; 2011 May 13; 22(19):195601. PubMed ID: 21430322
    [Abstract] [Full Text] [Related]

  • 19. Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.
    Lee A, Jiang Q, Tang M, Seeds A, Liu H.
    Opt Express; 2012 Sep 24; 20(20):22181-7. PubMed ID: 23037366
    [Abstract] [Full Text] [Related]

  • 20. Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate.
    Tanabe K, Nomura M, Guimard D, Iwamoto S, Arakawa Y.
    Opt Express; 2009 Apr 27; 17(9):7036-42. PubMed ID: 19399078
    [Abstract] [Full Text] [Related]


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