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Journal Abstract Search

192 related items for PubMed ID: 17722944

  • 1. Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques.
    Eymery J, Rieutord F, Favre-Nicolin V, Robach O, Niquet YM, Fröberg L, Mårtensson T, Samuelson L.
    Nano Lett; 2007 Sep; 7(9):2596-601. PubMed ID: 17722944
    [Abstract] [Full Text] [Related]

  • 2. Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
    Paladugu M, Zou J, Guo YN, Auchterlonie GJ, Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y.
    Small; 2007 Nov; 3(11):1873-7. PubMed ID: 17935062
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  • 3. Growth and characterization of InP nanowires with InAsP insertions.
    Tchernycheva M, Cirlin GE, Patriarche G, Travers L, Zwiller V, Perinetti U, Harmand JC.
    Nano Lett; 2007 Jun; 7(6):1500-4. PubMed ID: 17480113
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  • 6. InAs/InP radial nanowire heterostructures as high electron mobility devices.
    Jiang X, Xiong Q, Nam S, Qian F, Li Y, Lieber CM.
    Nano Lett; 2007 Oct; 7(10):3214-8. PubMed ID: 17867718
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  • 11. Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions.
    Fakhr A, Haddara YM, Lapierre RR.
    Nanotechnology; 2010 Apr 23; 21(16):165601. PubMed ID: 20348594
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  • 12. High electron mobility InAs nanowire field-effect transistors.
    Dayeh SA, Aplin DP, Zhou X, Yu PK, Yu ET, Wang D.
    Small; 2007 Feb 23; 3(2):326-32. PubMed ID: 17199246
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  • 13. III-V nanowire growth mechanism: V/III ratio and temperature effects.
    Dayeh SA, Yu ET, Wang D.
    Nano Lett; 2007 Aug 23; 7(8):2486-90. PubMed ID: 17608541
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  • 14. Structural and optical characterization of strained free-standing InP nanowires.
    González JC, da Silva MI, Lozano XS, Zanchet D, Ugarte D, Ribeiro E, Gutiérrez HR, Cotta MA.
    J Nanosci Nanotechnol; 2006 Jul 23; 6(7):2182-6. PubMed ID: 17025146
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  • 15. Electrostatic spin control in InAs/InP nanowire quantum dots.
    Romeo L, Roddaro S, Pitanti A, Ercolani D, Sorba L, Beltram F.
    Nano Lett; 2012 Sep 12; 12(9):4490-4. PubMed ID: 22849393
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  • 16. van der Waals epitaxy of InAs nanowires vertically aligned on single-layer graphene.
    Hong YJ, Lee WH, Wu Y, Ruoff RS, Fukui T.
    Nano Lett; 2012 Mar 14; 12(3):1431-6. PubMed ID: 22324301
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  • 17. Au-free epitaxial growth of InAs nanowires.
    Mandl B, Stangl J, Mårtensson T, Mikkelsen A, Eriksson J, Karlsson LS, Bauer GU, Samuelson L, Seifert W.
    Nano Lett; 2006 Aug 14; 6(8):1817-21. PubMed ID: 16895379
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  • 18. Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.
    Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J.
    Nano Lett; 2007 Apr 14; 7(4):921-6. PubMed ID: 17335270
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  • 19. Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates.
    Aagesen M, Johnson E, Sørensen CB, Mariager SO, Feidenhans'l R, Spiecker E, Nygård J, Lindelof PE.
    Nat Nanotechnol; 2007 Dec 14; 2(12):761-4. PubMed ID: 18654427
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  • 20. Structural transition in indium phosphide nanowires.
    Kitauchi Y, Kobayashi Y, Tomioka K, Hara S, Hiruma K, Fukui T, Motohisa J.
    Nano Lett; 2010 May 12; 10(5):1699-703. PubMed ID: 20387797
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