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Journal Abstract Search

236 related items for PubMed ID: 17887714

  • 1. Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography.
    Verheijen MA, Algra RE, Borgström MT, Immink G, Sourty E, Enckevort WJ, Vlieg E, Bakkers EP.
    Nano Lett; 2007 Oct; 7(10):3051-5. PubMed ID: 17887714
    [Abstract] [Full Text] [Related]

  • 2. Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
    Paladugu M, Zou J, Guo YN, Auchterlonie GJ, Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y.
    Small; 2007 Nov; 3(11):1873-7. PubMed ID: 17935062
    [No Abstract] [Full Text] [Related]

  • 3. Growth mechanism of truncated triangular III-V nanowires.
    Zou J, Paladugu M, Wang H, Auchterlonie GJ, Guo YN, Kim Y, Gao Q, Joyce HJ, Tan HH, Jagadish C.
    Small; 2007 Mar; 3(3):389-93. PubMed ID: 17285644
    [No Abstract] [Full Text] [Related]

  • 4. Stacking-faults-free zinc Blende GaAs nanowires.
    Shtrikman H, Popovitz-Biro R, Kretinin A, Heiblum M.
    Nano Lett; 2009 Jan; 9(1):215-9. PubMed ID: 19093840
    [Abstract] [Full Text] [Related]

  • 5. Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.
    Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J.
    Nano Lett; 2007 Apr; 7(4):921-6. PubMed ID: 17335270
    [Abstract] [Full Text] [Related]

  • 6. Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.
    Patriarche G, Glas F, Tchernycheva M, Sartel C, Largeau L, Harmand JC, Cirlin GE.
    Nano Lett; 2008 Jun; 8(6):1638-43. PubMed ID: 18471022
    [Abstract] [Full Text] [Related]

  • 7. Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions.
    Fakhr A, Haddara YM, Lapierre RR.
    Nanotechnology; 2010 Apr 23; 21(16):165601. PubMed ID: 20348594
    [Abstract] [Full Text] [Related]

  • 8. Growth and characterization of InP nanowires with InAsP insertions.
    Tchernycheva M, Cirlin GE, Patriarche G, Travers L, Zwiller V, Perinetti U, Harmand JC.
    Nano Lett; 2007 Jun 23; 7(6):1500-4. PubMed ID: 17480113
    [Abstract] [Full Text] [Related]

  • 9. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.
    Munshi AM, Dheeraj DL, Fauske VT, Kim DC, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2012 Sep 12; 12(9):4570-6. PubMed ID: 22889019
    [Abstract] [Full Text] [Related]

  • 10. Manganese-induced growth of GaAs nanowires.
    Martelli F, Rubini S, Piccin M, Bais G, Jabeen F, De Franceschi S, Grillo V, Carlino E, D'Acapito F, Boscherini F, Cabrini S, Lazzarino M, Businaro L, Romanato F, Franciosi A.
    Nano Lett; 2006 Sep 12; 6(9):2130-4. PubMed ID: 16968038
    [Abstract] [Full Text] [Related]

  • 11. Single GaAs/GaAsP coaxial core-shell nanowire lasers.
    Hua B, Motohisa J, Kobayashi Y, Hara S, Fukui T.
    Nano Lett; 2009 Jan 12; 9(1):112-6. PubMed ID: 19072060
    [Abstract] [Full Text] [Related]

  • 12. GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy.
    Ouattara L, Mikkelsen A, Sköld N, Eriksson J, Knaapen T, Cavar E, Seifert W, Samuelson L, Lundgren E.
    Nano Lett; 2007 Sep 12; 7(9):2859-64. PubMed ID: 17722945
    [Abstract] [Full Text] [Related]

  • 13. Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques.
    Eymery J, Rieutord F, Favre-Nicolin V, Robach O, Niquet YM, Fröberg L, Mårtensson T, Samuelson L.
    Nano Lett; 2007 Sep 12; 7(9):2596-601. PubMed ID: 17722944
    [Abstract] [Full Text] [Related]

  • 14. Gallium phosphide nanowires as a substrate for cultured neurons.
    Hällström W, Mårtensson T, Prinz C, Gustavsson P, Montelius L, Samuelson L, Kanje M.
    Nano Lett; 2007 Oct 12; 7(10):2960-5. PubMed ID: 17880143
    [Abstract] [Full Text] [Related]

  • 15. Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.
    Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y.
    Small; 2006 Mar 12; 2(3):386-9. PubMed ID: 17193056
    [No Abstract] [Full Text] [Related]

  • 16. Photoluminescence, thermal transport, and breakdown in joule-heated GaN nanowires.
    Westover T, Jones R, Huang JY, Wang G, Lai E, Talin AA.
    Nano Lett; 2009 Jan 12; 9(1):257-63. PubMed ID: 19090697
    [Abstract] [Full Text] [Related]

  • 17. Alignment of semiconductor nanowires using ion beams.
    Borschel C, Niepelt R, Geburt S, Gutsche C, Regolin I, Prost W, Tegude FJ, Stichtenoth D, Schwen D, Ronning C.
    Small; 2009 Nov 12; 5(22):2576-80. PubMed ID: 19714732
    [Abstract] [Full Text] [Related]

  • 18. III-V nanowire growth mechanism: V/III ratio and temperature effects.
    Dayeh SA, Yu ET, Wang D.
    Nano Lett; 2007 Aug 12; 7(8):2486-90. PubMed ID: 17608541
    [Abstract] [Full Text] [Related]

  • 19. Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires.
    Montazeri M, Fickenscher M, Smith LM, Jackson HE, Yarrison-Rice J, Kang JH, Gao Q, Tan HH, Jagadish C, Guo Y, Zou J, Pistol ME, Pryor CE.
    Nano Lett; 2010 Mar 10; 10(3):880-6. PubMed ID: 20131863
    [Abstract] [Full Text] [Related]

  • 20. GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)as at MnAs segregation conditions.
    Sadowski J, Dłuzewski P, Kret S, Janik E, Lusakowska E, Kanski J, Presz A, Terki F, Charar S, Tang D.
    Nano Lett; 2007 Sep 10; 7(9):2724-8. PubMed ID: 17718585
    [Abstract] [Full Text] [Related]

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