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311 related items for PubMed ID: 17930689
1. Why does wurtzite form in nanowires of III-V zinc blende semiconductors? Glas F, Harmand JC, Patriarche G. Phys Rev Lett; 2007 Oct 05; 99(14):146101. PubMed ID: 17930689 [Abstract] [Full Text] [Related]
3. Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires. Yu X, Wang H, Lu J, Zhao J, Misuraca J, Xiong P, von Molnár S. Nano Lett; 2012 Oct 10; 12(10):5436-42. PubMed ID: 22984828 [Abstract] [Full Text] [Related]
16. Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in situ x-ray diffraction. Schroth P, Köhl M, Hornung JW, Dimakis E, Somaschini C, Geelhaar L, Biermanns A, Bauer S, Lazarev S, Pietsch U, Baumbach T. Phys Rev Lett; 2015 Feb 06; 114(5):055504. PubMed ID: 25699455 [Abstract] [Full Text] [Related]
17. Surface effects on the atomic and electronic structure of unpassivated GaAs nanowires. Rosini M, Magri R. ACS Nano; 2010 Oct 26; 4(10):6021-31. PubMed ID: 20853868 [Abstract] [Full Text] [Related]
19. Dynamic process of phase transition from wurtzite to zinc blende structure in InAs nanowires. Zheng H, Wang J, Huang JY, Wang J, Zhang Z, Mao SX. Nano Lett; 2013 Oct 26; 13(12):6023-7. PubMed ID: 24274356 [Abstract] [Full Text] [Related]