These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

204 related items for PubMed ID: 17930853

  • 21. Effect of MgO Underlying Layer on the Growth of GaOx Tunnel Barrier in Epitaxial Fe/GaOx/(MgO)/Fe Magnetic Tunnel Junction Structure.
    Narayananellore SK, Doko N, Matsuo N, Saito H, Yuasa S.
    Sensors (Basel); 2017 Oct 23; 17(10):. PubMed ID: 29065516
    [Abstract] [Full Text] [Related]

  • 22. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.
    Lee DY, Lee SE, Shim TH, Park JG.
    Nanoscale Res Lett; 2016 Dec 23; 11(1):433. PubMed ID: 27677304
    [Abstract] [Full Text] [Related]

  • 23.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 24.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 25. Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions.
    Lu H, Guo Y, Robertson J.
    ACS Appl Mater Interfaces; 2021 Oct 06; 13(39):47226-47235. PubMed ID: 34559966
    [Abstract] [Full Text] [Related]

  • 26.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 27.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 28. Effect of insertion layer on electrode properties in magnetic tunnel junctions with a zero-moment half-metal.
    Titova A, Fowley C, Clifford E, Lau YC, Borisov K, Betto D, Atcheson G, Hübner R, Xu C, Stamenov P, Coey M, Rode K, Lindner J, Fassbender J, Deac AM.
    Sci Rep; 2019 Mar 11; 9(1):4020. PubMed ID: 30858481
    [Abstract] [Full Text] [Related]

  • 29. Tunneling anisotropic magnetoresistance driven by magnetic phase transition.
    Chen XZ, Feng JF, Wang ZC, Zhang J, Zhong XY, Song C, Jin L, Zhang B, Li F, Jiang M, Tan YZ, Zhou XJ, Shi GY, Zhou XF, Han XD, Mao SC, Chen YH, Han XF, Pan F.
    Nat Commun; 2017 Sep 06; 8(1):449. PubMed ID: 28878205
    [Abstract] [Full Text] [Related]

  • 30. Realizing Room-Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl2O4 Quasi-Quantum Well Structures.
    Xiang Q, Sukegawa H, Belmoubarik M, Al-Mahdawi M, Scheike T, Kasai S, Miura Y, Mitani S.
    Adv Sci (Weinh); 2019 Oct 16; 6(20):1901438. PubMed ID: 31637172
    [Abstract] [Full Text] [Related]

  • 31. Interfacial resonance state probed by spin-polarized tunneling in epitaxial Fe/MgO/Fe tunnel junctions.
    Tiusan C, Faure-Vincent J, Bellouard C, Hehn M, Jouguelet E, Schuhl A.
    Phys Rev Lett; 2004 Sep 03; 93(10):106602. PubMed ID: 15447433
    [Abstract] [Full Text] [Related]

  • 32.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 33. Bias voltage dependence of tunneling anisotropic magnetoresistance in magnetic tunnel junctions with MgO and Al2O3 tunnel barriers.
    Gao L, Jiang X, Yang SH, Burton JD, Tsymbal EY, Parkin SS.
    Phys Rev Lett; 2007 Nov 30; 99(22):226602. PubMed ID: 18233308
    [Abstract] [Full Text] [Related]

  • 34.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 35. The Influence of Capping Layers on Tunneling Magnetoresistance and Microstructure in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions upon Annealing.
    Kim G, Lee S, Lee S, Song B, Lee BK, Lee D, Lee JS, Lee MH, Kim YK, Park BG.
    Nanomaterials (Basel); 2023 Sep 19; 13(18):. PubMed ID: 37764621
    [Abstract] [Full Text] [Related]

  • 36.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 37.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 38. Effect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe magnetic tunnel junctions.
    Yamamoto M, Ishikawa T, Taira T, Li GF, Matsuda K, Uemura T.
    J Phys Condens Matter; 2010 Apr 28; 22(16):164212. PubMed ID: 21386418
    [Abstract] [Full Text] [Related]

  • 39. High Tunneling Magnetoresistance in Magnetic Tunnel Junctions with Subnanometer Thick Al2O3 Tunnel Barriers Fabricated Using Atomic Layer Deposition.
    Acharya J, Goul R, Wu J.
    ACS Appl Mater Interfaces; 2021 Apr 07; 13(13):15738-15745. PubMed ID: 32639721
    [Abstract] [Full Text] [Related]

  • 40.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

    Page: [Previous] [Next] [New Search]
    of 11.