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Journal Abstract Search

578 related items for PubMed ID: 18047139

  • 1. Fabrication of poly-silicon nano-wire transistors on plastic substrates.
    Park C, Lee S, Choi M, Kang M, Jung Y, Hwang S, Ahn D, Lee J, Song C.
    J Nanosci Nanotechnol; 2007 Nov; 7(11):4150-3. PubMed ID: 18047139
    [Abstract] [Full Text] [Related]

  • 2. Realization of a silicon nanowire vertical surround-gate field-effect transistor.
    Schmidt V, Riel H, Senz S, Karg S, Riess W, Gösele U.
    Small; 2006 Jan; 2(1):85-8. PubMed ID: 17193560
    [No Abstract] [Full Text] [Related]

  • 3. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
    Yoon A, Hong WK, Lee T.
    J Nanosci Nanotechnol; 2007 Nov; 7(11):4101-5. PubMed ID: 18047128
    [Abstract] [Full Text] [Related]

  • 4. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.
    Chang YK, Hong FC.
    Nanotechnology; 2009 May 13; 20(19):195302. PubMed ID: 19420638
    [Abstract] [Full Text] [Related]

  • 5. Fabrication of suspended silicon nanowire arrays.
    Lee KN, Jung SW, Shin KS, Kim WH, Lee MH, Seong WK.
    Small; 2008 May 13; 4(5):642-8. PubMed ID: 18431721
    [Abstract] [Full Text] [Related]

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    [No Abstract] [Full Text] [Related]

  • 7. Fully depleted nanowire field-effect transistor in inversion mode.
    Hayden O, Björk MT, Schmid H, Riel H, Drechsler U, Karg SF, Lörtscher E, Riess W.
    Small; 2007 Feb 13; 3(2):230-4. PubMed ID: 17199244
    [No Abstract] [Full Text] [Related]

  • 8. Water-mediated Al metal transfer printing with contact inking for fabrication of thin-film transistors.
    Oh K, Lee BH, Hwang JK, Lee H, Im S, Sung MM.
    Small; 2009 Mar 13; 5(5):558-61. PubMed ID: 19199334
    [No Abstract] [Full Text] [Related]

  • 9. Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods.
    Jeon Y, Kang J, Lee M, Moon T, Kim S.
    J Nanosci Nanotechnol; 2013 May 13; 13(5):3350-3. PubMed ID: 23858857
    [Abstract] [Full Text] [Related]

  • 10. Enhancement-mode silicon nanowire field-effect transistors on plastic substrates.
    Chung EA, Koo J, Lee M, Jeong DY, Kim S.
    Small; 2009 Aug 17; 5(16):1821-4. PubMed ID: 19408257
    [No Abstract] [Full Text] [Related]

  • 11. Novel poly-silicon nanowire field effect transistor for biosensing application.
    Hsiao CY, Lin CH, Hung CH, Su CJ, Lo YR, Lee CC, Lin HC, Ko FH, Huang TY, Yang YS.
    Biosens Bioelectron; 2009 Jan 01; 24(5):1223-9. PubMed ID: 18760914
    [Abstract] [Full Text] [Related]

  • 12. Adsorption of ammonia on graphene.
    Romero HE, Joshi P, Gupta AK, Gutierrez HR, Cole MW, Tadigadapa SA, Eklund PC.
    Nanotechnology; 2009 Jun 17; 20(24):245501. PubMed ID: 19468162
    [Abstract] [Full Text] [Related]

  • 13. Morphological impact of zinc oxide layers on the device performance in thin-film transistors.
    Faber H, Klaumünzer M, Voigt M, Galli D, Vieweg BF, Peukert W, Spiecker E, Halik M.
    Nanoscale; 2011 Mar 17; 3(3):897-9. PubMed ID: 21116548
    [Abstract] [Full Text] [Related]

  • 14. Hybrid permeable-base transistors based on an indenofluorene derivative.
    Serbena JP, Hümmelgen IA, Hadizad T, Wang ZY.
    Small; 2006 Mar 17; 2(3):372-4. PubMed ID: 17193053
    [No Abstract] [Full Text] [Related]

  • 15. High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis.
    Joung D, Chunder A, Zhai L, Khondaker SI.
    Nanotechnology; 2010 Apr 23; 21(16):165202. PubMed ID: 20348593
    [Abstract] [Full Text] [Related]

  • 16. n-Type behavior of graphene supported on Si/SiO(2) substrates.
    Romero HE, Shen N, Joshi P, Gutierrez HR, Tadigadapa SA, Sofo JO, Eklund PC.
    ACS Nano; 2008 Oct 28; 2(10):2037-44. PubMed ID: 19206449
    [Abstract] [Full Text] [Related]

  • 17. Nanomaterials: silicon goes thermoelectric.
    Rodgers P.
    Nat Nanotechnol; 2008 Feb 28; 3(2):76. PubMed ID: 18654464
    [No Abstract] [Full Text] [Related]

  • 18. Three-dimensional etching of silicon for the fabrication of low-dimensional and suspended devices.
    Walavalkar SS, Homyk AP, Henry MD, Scherer A.
    Nanoscale; 2013 Feb 07; 5(3):927-31. PubMed ID: 23292113
    [Abstract] [Full Text] [Related]

  • 19. A novel method for fabricating sub-16 nm footprint T-gate nanoimprint molds.
    Peng C, Liang X, Chou SY.
    Nanotechnology; 2009 May 06; 20(18):185302. PubMed ID: 19420609
    [Abstract] [Full Text] [Related]

  • 20. Semiconductors: chip maker turns to self-assembly.
    Rodgers P.
    Nat Nanotechnol; 2007 Jun 06; 2(6):342. PubMed ID: 18654302
    [No Abstract] [Full Text] [Related]

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