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Journal Abstract Search

174 related items for PubMed ID: 18298094

  • 1. Strong suppression of electrical noise in bilayer graphene nanodevices.
    Lin YM, Avouris P.
    Nano Lett; 2008 Aug; 8(8):2119-25. PubMed ID: 18298094
    [Abstract] [Full Text] [Related]

  • 2.
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    [No Abstract] [Full Text] [Related]

  • 3. Tunability of 1/f Noise at Multiple Dirac Cones in hBN Encapsulated Graphene Devices.
    Kumar C, Kuiri M, Jung J, Das T, Das A.
    Nano Lett; 2016 Feb 10; 16(2):1042-9. PubMed ID: 26765292
    [Abstract] [Full Text] [Related]

  • 4. 1/f noise in graphene nanopores.
    Heerema SJ, Schneider GF, Rozemuller M, Vicarelli L, Zandbergen HW, Dekker C.
    Nanotechnology; 2015 Feb 20; 26(7):074001. PubMed ID: 25629930
    [Abstract] [Full Text] [Related]

  • 5. Mobility-dependent low-frequency noise in graphene field-effect transistors.
    Zhang Y, Mendez EE, Du X.
    ACS Nano; 2011 Oct 25; 5(10):8124-30. PubMed ID: 21913642
    [Abstract] [Full Text] [Related]

  • 6. Noise Analysis of Monolayer Graphene Nanopores.
    Zhang ZY, Deng YS, Tian HB, Yan H, Cui HL, Wang DQ.
    Int J Mol Sci; 2018 Sep 06; 19(9):. PubMed ID: 30200591
    [Abstract] [Full Text] [Related]

  • 7. Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors.
    Tian M, Hu Q, Gu C, Xiong X, Zhang Z, Li X, Wu Y.
    ACS Appl Mater Interfaces; 2020 Apr 15; 12(15):17686-17690. PubMed ID: 32189495
    [Abstract] [Full Text] [Related]

  • 8. Fluorination of isotopically labeled turbostratic and Bernal stacked bilayer graphene.
    Ek Weis J, Costa SD, Frank O, Bastl Z, Kalbac M.
    Chemistry; 2015 Jan 12; 21(3):1081-7. PubMed ID: 25394738
    [Abstract] [Full Text] [Related]

  • 9. Effect of spatial charge inhomogeneity on 1/f noise behavior in graphene.
    Xu G, Torres CM, Zhang Y, Liu F, Song EB, Wang M, Zhou Y, Zeng C, Wang KL.
    Nano Lett; 2010 Sep 08; 10(9):3312-7. PubMed ID: 20684526
    [Abstract] [Full Text] [Related]

  • 10. Graphene/g-C3N4 bilayer: considerable band gap opening and effective band structure engineering.
    Li X, Dai Y, Ma Y, Han S, Huang B.
    Phys Chem Chem Phys; 2014 Mar 07; 16(9):4230-5. PubMed ID: 24452306
    [Abstract] [Full Text] [Related]

  • 11. Noise and its reduction in graphene based nanopore devices.
    Kumar A, Park KB, Kim HM, Kim KB.
    Nanotechnology; 2013 Dec 13; 24(49):495503. PubMed ID: 24240186
    [Abstract] [Full Text] [Related]

  • 12. Low-frequency 1/f noise in graphene devices.
    Balandin AA.
    Nat Nanotechnol; 2013 Aug 13; 8(8):549-55. PubMed ID: 23912107
    [Abstract] [Full Text] [Related]

  • 13. Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms.
    Rumyantsev S, Liu G, Stillman W, Shur M, Balandin AA.
    J Phys Condens Matter; 2010 Oct 06; 22(39):395302. PubMed ID: 21403224
    [Abstract] [Full Text] [Related]

  • 14. Resistance noise in electrically biased bilayer graphene.
    Pal AN, Ghosh A.
    Phys Rev Lett; 2009 Mar 27; 102(12):126805. PubMed ID: 19392308
    [Abstract] [Full Text] [Related]

  • 15. Opening an electrical band gap of bilayer graphene with molecular doping.
    Zhang W, Lin CT, Liu KK, Tite T, Su CY, Chang CH, Lee YH, Chu CW, Wei KH, Kuo JL, Li LJ.
    ACS Nano; 2011 Sep 27; 5(9):7517-24. PubMed ID: 21819152
    [Abstract] [Full Text] [Related]

  • 16. Contrasting diffusion behaviors of O and F atoms on graphene and within bilayer graphene.
    Yi S, Choi JH, Kim HJ, Park CH, Cho JH.
    Phys Chem Chem Phys; 2017 Mar 29; 19(13):9107-9112. PubMed ID: 28318001
    [Abstract] [Full Text] [Related]

  • 17. Designed CVD growth of graphene via process engineering.
    Yan K, Fu L, Peng H, Liu Z.
    Acc Chem Res; 2013 Oct 15; 46(10):2263-74. PubMed ID: 23869401
    [Abstract] [Full Text] [Related]

  • 18. Understanding the bias dependence of low frequency noise in single layer graphene FETs.
    Mavredakis N, Garcia Cortadella R, Bonaccini Calia A, Garrido JA, Jiménez D.
    Nanoscale; 2018 Aug 09; 10(31):14947-14956. PubMed ID: 30047555
    [Abstract] [Full Text] [Related]

  • 19. Interaction driven quantum Hall effect in artificially stacked graphene bilayers.
    Iqbal MZ, Iqbal MW, Siddique S, Khan MF, Ramay SM, Nam J, Kim KS, Eom J.
    Sci Rep; 2016 Apr 21; 6():24815. PubMed ID: 27098387
    [Abstract] [Full Text] [Related]

  • 20. Microscopic mechanism of 1/f noise in graphene: role of energy band dispersion.
    Pal AN, Ghatak S, Kochat V, Sneha ES, Sampathkumar A, Raghavan S, Ghosh A.
    ACS Nano; 2011 Mar 22; 5(3):2075-81. PubMed ID: 21332148
    [Abstract] [Full Text] [Related]

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