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Journal Abstract Search

171 related items for PubMed ID: 18363342

  • 1.
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  • 2. Doping-dependent electrical characteristics of SnO2 nanowires.
    Wan Q, Dattoli E, Lu W.
    Small; 2008 Apr; 4(4):451-4. PubMed ID: 18383191
    [No Abstract] [Full Text] [Related]

  • 3. Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates.
    Yang WQ, Dai L, You LP, Zhang BR, Shen B, Qin GG.
    J Nanosci Nanotechnol; 2006 Dec; 6(12):3780-3. PubMed ID: 17256330
    [Abstract] [Full Text] [Related]

  • 4. Mo6S9-xIx nanowire recognitive molecular-scale connectivity.
    Ploscaru MI, Kokalj SJ, Uplaznik M, Vengust D, Turk D, Mrzel A, Mihailovic D.
    Nano Lett; 2007 Jun; 7(6):1445-8. PubMed ID: 17472406
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  • 6. Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices.
    O'Dwyer C, Szachowicz M, Visimberga G, Lavayen V, Newcomb SB, Torres CM.
    Nat Nanotechnol; 2009 Apr; 4(4):239-44. PubMed ID: 19350034
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  • 8. Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy.
    Fuhrmann B, Leipner HS, Höche HR, Schubert L, Werner P, Gösele U.
    Nano Lett; 2005 Dec; 5(12):2524-7. PubMed ID: 16351208
    [Abstract] [Full Text] [Related]

  • 9. Metal/Conducting-polymer composite nanowires.
    Meenach SA, Burdick J, Kunwar A, Wang J.
    Small; 2007 Feb; 3(2):239-43. PubMed ID: 17199245
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  • 11. Synthesis: regime change for nanowire growth.
    Johansson J.
    Nat Nanotechnol; 2007 Sep; 2(9):534-5. PubMed ID: 18654360
    [No Abstract] [Full Text] [Related]

  • 12. Charge influence and growth mechanism of ZnO nanorods.
    Park SH, Han SW.
    J Nanosci Nanotechnol; 2007 Jul; 7(7):2526-9. PubMed ID: 17663276
    [Abstract] [Full Text] [Related]

  • 13. Controlled growth of Si nanowire arrays for device integration.
    Hochbaum AI, Fan R, He R, Yang P.
    Nano Lett; 2005 Mar; 5(3):457-60. PubMed ID: 15755094
    [Abstract] [Full Text] [Related]

  • 14. Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.
    Hsin CL, He JH, Lee CY, Wu WW, Yeh PH, Chen LJ, Wang ZL.
    Nano Lett; 2007 Jun; 7(6):1799-803. PubMed ID: 17516681
    [Abstract] [Full Text] [Related]

  • 15. Catalytic growth of single-crystalline V(2)O(5) nanowire arrays.
    Velazquez JM, Banerjee S.
    Small; 2009 May; 5(9):1025-9. PubMed ID: 19235798
    [No Abstract] [Full Text] [Related]

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  • 17. III-V nanowire growth mechanism: V/III ratio and temperature effects.
    Dayeh SA, Yu ET, Wang D.
    Nano Lett; 2007 Aug; 7(8):2486-90. PubMed ID: 17608541
    [Abstract] [Full Text] [Related]

  • 18. Ultralong single-crystal metallic Ni2Si nanowires with low resistivity.
    Song Y, Schmitt AL, Jin S.
    Nano Lett; 2007 Apr; 7(4):965-9. PubMed ID: 17385935
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