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Journal Abstract Search

150 related items for PubMed ID: 18422362

  • 1. Optical antenna effect in semiconducting nanowires.
    Chen G, Wu J, Lu Q, Gutierrez HR, Xiong Q, Pellen ME, Petko JS, Werner DH, Eklund PC.
    Nano Lett; 2008 May; 8(5):1341-6. PubMed ID: 18422362
    [Abstract] [Full Text] [Related]

  • 2. Raman spectroscopy and structure of crystalline gallium phosphide nanowires.
    Xiong Q, Gupta R, Adu KW, Dickey EC, Lian GD, Tham D, Fischer JE, Eklund PC.
    J Nanosci Nanotechnol; 2003 Aug; 3(4):335-9. PubMed ID: 14598449
    [Abstract] [Full Text] [Related]

  • 3. Gallium phosphide nanowires as a substrate for cultured neurons.
    Hällström W, Mårtensson T, Prinz C, Gustavsson P, Montelius L, Samuelson L, Kanje M.
    Nano Lett; 2007 Oct; 7(10):2960-5. PubMed ID: 17880143
    [Abstract] [Full Text] [Related]

  • 4. Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions.
    Fakhr A, Haddara YM, Lapierre RR.
    Nanotechnology; 2010 Apr 23; 21(16):165601. PubMed ID: 20348594
    [Abstract] [Full Text] [Related]

  • 5. Investigation on localized states in GaN nanowires.
    Polenta L, Rossi M, Cavallini A, Calarco R, Marso M, Meijers R, Richter T, Stoica T, Lüth H.
    ACS Nano; 2008 Feb 23; 2(2):287-92. PubMed ID: 19206629
    [Abstract] [Full Text] [Related]

  • 6. Cavity-enhanced stimulated raman scattering from short GaP nanowires.
    Wu J, Gupta AK, Gutierrez HR, Eklund PC.
    Nano Lett; 2009 Sep 23; 9(9):3252-7. PubMed ID: 19678612
    [Abstract] [Full Text] [Related]

  • 7. Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography.
    Verheijen MA, Algra RE, Borgström MT, Immink G, Sourty E, Enckevort WJ, Vlieg E, Bakkers EP.
    Nano Lett; 2007 Oct 23; 7(10):3051-5. PubMed ID: 17887714
    [Abstract] [Full Text] [Related]

  • 8. p-Type alpha-Fe2O3 nanowires and their n-type transition in a reductive ambient.
    Lee YC, Chueh YL, Hsieh CH, Chang MT, Chou LJ, Wang ZL, Lan YW, Chen CD, Kurata H, Isoda S.
    Small; 2007 Aug 23; 3(8):1356-61. PubMed ID: 17657758
    [No Abstract] [Full Text] [Related]

  • 9. Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy.
    Calarco R, Meijers RJ, Debnath RK, Stoica T, Sutter E, Lüth H.
    Nano Lett; 2007 Aug 23; 7(8):2248-51. PubMed ID: 17602537
    [Abstract] [Full Text] [Related]

  • 10. Electrodeposition and characterization of CdSe semiconducting nanowires.
    Yu-Zhang K, Guo DZ, Mallet J, Molinari M, Loualiche A, Troyon M.
    J Nanosci Nanotechnol; 2008 Apr 23; 8(4):2022-8. PubMed ID: 18572609
    [Abstract] [Full Text] [Related]

  • 11. Band-offset driven efficiency of the doping of SiGe core-shell nanowires.
    Amato M, Ossicini S, Rurali R.
    Nano Lett; 2011 Feb 09; 11(2):594-8. PubMed ID: 21188962
    [Abstract] [Full Text] [Related]

  • 12. Growth mechanism of truncated triangular III-V nanowires.
    Zou J, Paladugu M, Wang H, Auchterlonie GJ, Guo YN, Kim Y, Gao Q, Joyce HJ, Tan HH, Jagadish C.
    Small; 2007 Mar 09; 3(3):389-93. PubMed ID: 17285644
    [No Abstract] [Full Text] [Related]

  • 13. Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates.
    Yang WQ, Dai L, You LP, Zhang BR, Shen B, Qin GG.
    J Nanosci Nanotechnol; 2006 Dec 09; 6(12):3780-3. PubMed ID: 17256330
    [Abstract] [Full Text] [Related]

  • 14. Preferential orientation of a chiral semiconducting carbon nanotube on the locally depassivated Si(100)-2 x 1:H surface identified by scanning tunneling microscopy.
    Albrecht PM, Barraza-Lopez S, Lyding JW.
    Small; 2007 Aug 09; 3(8):1402-6. PubMed ID: 17583550
    [No Abstract] [Full Text] [Related]

  • 15. Phase diagram of nanoscale alloy particles used for vapor-liquid-solid growth of semiconductor nanowires.
    Sutter E, Sutter P.
    Nano Lett; 2008 Feb 09; 8(2):411-4. PubMed ID: 18193910
    [Abstract] [Full Text] [Related]

  • 16. Photoluminescence, thermal transport, and breakdown in joule-heated GaN nanowires.
    Westover T, Jones R, Huang JY, Wang G, Lai E, Talin AA.
    Nano Lett; 2009 Jan 09; 9(1):257-63. PubMed ID: 19090697
    [Abstract] [Full Text] [Related]

  • 17. Temperature-dependent growth direction of ultrathin ZnSe nanowires.
    Cai Y, Chan SK, Sou IK, Chan YF, Su DS, Wang N.
    Small; 2007 Jan 09; 3(1):111-5. PubMed ID: 17294480
    [No Abstract] [Full Text] [Related]

  • 18. Alignment of semiconductor nanowires using ion beams.
    Borschel C, Niepelt R, Geburt S, Gutsche C, Regolin I, Prost W, Tegude FJ, Stichtenoth D, Schwen D, Ronning C.
    Small; 2009 Nov 09; 5(22):2576-80. PubMed ID: 19714732
    [Abstract] [Full Text] [Related]

  • 19. Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.
    Patriarche G, Glas F, Tchernycheva M, Sartel C, Largeau L, Harmand JC, Cirlin GE.
    Nano Lett; 2008 Jun 09; 8(6):1638-43. PubMed ID: 18471022
    [Abstract] [Full Text] [Related]

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