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Journal Abstract Search

206 related items for PubMed ID: 18471022

  • 1. Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.
    Patriarche G, Glas F, Tchernycheva M, Sartel C, Largeau L, Harmand JC, Cirlin GE.
    Nano Lett; 2008 Jun; 8(6):1638-43. PubMed ID: 18471022
    [Abstract] [Full Text] [Related]

  • 2. Stacking-faults-free zinc Blende GaAs nanowires.
    Shtrikman H, Popovitz-Biro R, Kretinin A, Heiblum M.
    Nano Lett; 2009 Jan; 9(1):215-9. PubMed ID: 19093840
    [Abstract] [Full Text] [Related]

  • 3. Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.
    Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J.
    Nano Lett; 2007 Apr; 7(4):921-6. PubMed ID: 17335270
    [Abstract] [Full Text] [Related]

  • 4. Growth mechanism of truncated triangular III-V nanowires.
    Zou J, Paladugu M, Wang H, Auchterlonie GJ, Guo YN, Kim Y, Gao Q, Joyce HJ, Tan HH, Jagadish C.
    Small; 2007 Mar; 3(3):389-93. PubMed ID: 17285644
    [No Abstract] [Full Text] [Related]

  • 5. Structural phase control in self-catalyzed growth of GaAs nanowires on silicon (111).
    Krogstrup P, Popovitz-Biro R, Johnson E, Madsen MH, Nygård J, Shtrikman H.
    Nano Lett; 2010 Nov 10; 10(11):4475-82. PubMed ID: 20932012
    [Abstract] [Full Text] [Related]

  • 6. Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
    Paladugu M, Zou J, Guo YN, Auchterlonie GJ, Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y.
    Small; 2007 Nov 10; 3(11):1873-7. PubMed ID: 17935062
    [No Abstract] [Full Text] [Related]

  • 7. Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography.
    Verheijen MA, Algra RE, Borgström MT, Immink G, Sourty E, Enckevort WJ, Vlieg E, Bakkers EP.
    Nano Lett; 2007 Oct 10; 7(10):3051-5. PubMed ID: 17887714
    [Abstract] [Full Text] [Related]

  • 8. Alignment of semiconductor nanowires using ion beams.
    Borschel C, Niepelt R, Geburt S, Gutsche C, Regolin I, Prost W, Tegude FJ, Stichtenoth D, Schwen D, Ronning C.
    Small; 2009 Nov 10; 5(22):2576-80. PubMed ID: 19714732
    [Abstract] [Full Text] [Related]

  • 9. Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions.
    Fakhr A, Haddara YM, Lapierre RR.
    Nanotechnology; 2010 Apr 23; 21(16):165601. PubMed ID: 20348594
    [Abstract] [Full Text] [Related]

  • 10. Manganese-induced growth of GaAs nanowires.
    Martelli F, Rubini S, Piccin M, Bais G, Jabeen F, De Franceschi S, Grillo V, Carlino E, D'Acapito F, Boscherini F, Cabrini S, Lazzarino M, Businaro L, Romanato F, Franciosi A.
    Nano Lett; 2006 Sep 23; 6(9):2130-4. PubMed ID: 16968038
    [Abstract] [Full Text] [Related]

  • 11. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.
    Munshi AM, Dheeraj DL, Fauske VT, Kim DC, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2012 Sep 12; 12(9):4570-6. PubMed ID: 22889019
    [Abstract] [Full Text] [Related]

  • 12. Self-directed growth of AlGaAs core-shell nanowires for visible light applications.
    Chen C, Shehata S, Fradin C, LaPierre R, Couteau C, Weihs G.
    Nano Lett; 2007 Sep 12; 7(9):2584-9. PubMed ID: 17696557
    [Abstract] [Full Text] [Related]

  • 13. Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.
    Joyce HJ, Wong-Leung J, Gao Q, Tan HH, Jagadish C.
    Nano Lett; 2010 Mar 10; 10(3):908-15. PubMed ID: 20131909
    [Abstract] [Full Text] [Related]

  • 14. Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates.
    Yang WQ, Dai L, You LP, Zhang BR, Shen B, Qin GG.
    J Nanosci Nanotechnol; 2006 Dec 10; 6(12):3780-3. PubMed ID: 17256330
    [Abstract] [Full Text] [Related]

  • 15. GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy.
    Ouattara L, Mikkelsen A, Sköld N, Eriksson J, Knaapen T, Cavar E, Seifert W, Samuelson L, Lundgren E.
    Nano Lett; 2007 Sep 10; 7(9):2859-64. PubMed ID: 17722945
    [Abstract] [Full Text] [Related]

  • 16. GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)as at MnAs segregation conditions.
    Sadowski J, Dłuzewski P, Kret S, Janik E, Lusakowska E, Kanski J, Presz A, Terki F, Charar S, Tang D.
    Nano Lett; 2007 Sep 10; 7(9):2724-8. PubMed ID: 17718585
    [Abstract] [Full Text] [Related]

  • 17. Multiple quantum well AlGaAs nanowires.
    Chen C, Braidy N, Couteau C, Fradin C, Weihs G, LaPierre R.
    Nano Lett; 2008 Feb 10; 8(2):495-9. PubMed ID: 18184023
    [Abstract] [Full Text] [Related]

  • 18. Shear stress measurements on InAs nanowires by AFM manipulation.
    Bordag M, Ribayrol A, Conache G, Fröberg LE, Gray S, Samuelson L, Montelius L, Pettersson H.
    Small; 2007 Aug 10; 3(8):1398-401. PubMed ID: 17657751
    [No Abstract] [Full Text] [Related]

  • 19. Electrodeposition and characterization of CdSe semiconducting nanowires.
    Yu-Zhang K, Guo DZ, Mallet J, Molinari M, Loualiche A, Troyon M.
    J Nanosci Nanotechnol; 2008 Apr 10; 8(4):2022-8. PubMed ID: 18572609
    [Abstract] [Full Text] [Related]

  • 20. All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.
    Yu X, Wang H, Pan D, Zhao J, Misuraca J, von Molnár S, Xiong P.
    Nano Lett; 2013 Apr 10; 13(4):1572-7. PubMed ID: 23517546
    [Abstract] [Full Text] [Related]

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