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Journal Abstract Search

144 related items for PubMed ID: 18504720

  • 1. Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires.
    Fontcuberta i Morral A, Spirkoska D, Arbiol J, Heigoldt M, Ramon Morante J, Abstreiter G.
    Small; 2008 Jul; 4(7):899-903. PubMed ID: 18504720
    [No Abstract] [Full Text] [Related]

  • 2. Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy.
    Zhou HL, Hoang TB, Dheeraj DL, van Helvoort AT, Liu L, Harmand JC, Fimland BO, Weman H.
    Nanotechnology; 2009 Oct 14; 20(41):415701. PubMed ID: 19755725
    [Abstract] [Full Text] [Related]

  • 3. Top-down fabrication of semiconductor nanowires with alternating structures along their longitudinal and transverse axes.
    Sun Y, Graff RA, Strano MS, Rogers JA.
    Small; 2005 Nov 14; 1(11):1052-7. PubMed ID: 17193393
    [No Abstract] [Full Text] [Related]

  • 4. In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires.
    Heiss M, Ketterer B, Uccelli E, Morante JR, Arbiol J, Fontcuberta i Morral A.
    Nanotechnology; 2011 May 13; 22(19):195601. PubMed ID: 21430322
    [Abstract] [Full Text] [Related]

  • 5. GaAs core--shell nanowires for photovoltaic applications.
    Czaban JA, Thompson DA, LaPierre RR.
    Nano Lett; 2009 Jan 13; 9(1):148-54. PubMed ID: 19143502
    [Abstract] [Full Text] [Related]

  • 6. Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates.
    Ihn SG, Song JI, Kim TW, Leem DS, Lee T, Lee SG, Koh EK, Song K.
    Nano Lett; 2007 Jan 13; 7(1):39-44. PubMed ID: 17212437
    [Abstract] [Full Text] [Related]

  • 7. Growth of vertical InAs nanowires on heterostructured substrates.
    Roddaro S, Caroff P, Biasiol G, Rossi F, Bocchi C, Nilsson K, Fröberg L, Wagner JB, Samuelson L, Wernersson LE, Sorba L.
    Nanotechnology; 2009 Jul 15; 20(28):285303. PubMed ID: 19546499
    [Abstract] [Full Text] [Related]

  • 8. Evolution of epitaxial InAs nanowires on GaAs 111B.
    Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C.
    Small; 2009 Mar 15; 5(3):366-9. PubMed ID: 19152357
    [No Abstract] [Full Text] [Related]

  • 9. High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy.
    Caroff P, Wagner JB, Dick KA, Nilsson HA, Jeppsson M, Deppert K, Samuelson L, Wallenberg LR, Wernersson LE.
    Small; 2008 Jul 15; 4(7):878-82. PubMed ID: 18576282
    [No Abstract] [Full Text] [Related]

  • 10. Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting.
    Kibria MG, Zhao S, Chowdhury FA, Wang Q, Nguyen HP, Trudeau ML, Guo H, Mi Z.
    Nat Commun; 2014 Apr 30; 5():3825. PubMed ID: 24781276
    [Abstract] [Full Text] [Related]

  • 11. All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.
    Yu X, Wang H, Pan D, Zhao J, Misuraca J, von Molnár S, Xiong P.
    Nano Lett; 2013 Apr 10; 13(4):1572-7. PubMed ID: 23517546
    [Abstract] [Full Text] [Related]

  • 12. A printable form of single-crystalline gallium nitride for flexible optoelectronic systems.
    Lee KJ, Lee J, Hwang H, Reitmeier ZJ, Davis RF, Rogers JA, Nuzzo RG.
    Small; 2005 Dec 10; 1(12):1164-8. PubMed ID: 17193410
    [No Abstract] [Full Text] [Related]

  • 13. Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiO(x) by catalyst-free molecular beam epitaxy.
    Zhao S, Kibria MG, Wang Q, Nguyen HP, Mi Z.
    Nanoscale; 2013 Jun 21; 5(12):5283-7. PubMed ID: 23661186
    [Abstract] [Full Text] [Related]

  • 14. Printed arrays of aligned GaAs wires for flexible transistors, diodes, and circuits on plastic substrates.
    Sun Y, Kim HS, Menard E, Kim S, Adesida I, Rogers JA.
    Small; 2006 Nov 21; 2(11):1330-4. PubMed ID: 17192982
    [No Abstract] [Full Text] [Related]

  • 15. Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures.
    Liu XQ, Lu W, Shen SC, Tan HH, Jagadish C, Zou J.
    J Nanosci Nanotechnol; 2001 Dec 21; 1(4):389-92. PubMed ID: 12914079
    [Abstract] [Full Text] [Related]

  • 16. Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy.
    Parkinson P, Joyce HJ, Gao Q, Tan HH, Zhang X, Zou J, Jagadish C, Herz LM, Johnston MB.
    Nano Lett; 2009 Sep 21; 9(9):3349-53. PubMed ID: 19736975
    [Abstract] [Full Text] [Related]

  • 17. Catalytic role of gold nanoparticle in GaAs nanowire growth: a density functional theory study.
    Kratzer P, Sakong S, Pankoke V.
    Nano Lett; 2012 Feb 08; 12(2):943-8. PubMed ID: 22268683
    [Abstract] [Full Text] [Related]

  • 18. Influence of metal deposition on exciton-surface plasmon polariton coupling in GaAs/AlAs/GaAs core-shell nanowires studied with time-resolved cathodoluminescence.
    Estrin Y, Rich DH, Kretinin AV, Shtrikman H.
    Nano Lett; 2013 Apr 10; 13(4):1602-10. PubMed ID: 23516975
    [Abstract] [Full Text] [Related]

  • 19. High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures.
    Funk S, Royo M, Zardo I, Rudolph D, Morkötter S, Mayer B, Becker J, Bechtold A, Matich S, Döblinger M, Bichler M, Koblmüller G, Finley JJ, Bertoni A, Goldoni G, Abstreiter G.
    Nano Lett; 2013 Apr 10; 13(12):6189-96. PubMed ID: 24274328
    [Abstract] [Full Text] [Related]

  • 20. Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.
    Yu Y, Li MF, He JF, He YM, Wei YJ, He Y, Zha GW, Shang XJ, Wang J, Wang LJ, Wang GW, Ni HQ, Lu CY, Niu ZC.
    Nano Lett; 2013 Apr 10; 13(4):1399-404. PubMed ID: 23464836
    [Abstract] [Full Text] [Related]

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