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Journal Abstract Search

144 related items for PubMed ID: 18504720

  • 21. Spontaneous alloy composition ordering in GaAs-AlGaAs core-shell nanowires.
    Rudolph D, Funk S, Döblinger M, Morkötter S, Hertenberger S, Schweickert L, Becker J, Matich S, Bichler M, Spirkoska D, Zardo I, Finley JJ, Abstreiter G, Koblmüller G.
    Nano Lett; 2013 Apr 10; 13(4):1522-7. PubMed ID: 23517063
    [Abstract] [Full Text] [Related]

  • 22. Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy.
    Landré O, Bougerol C, Renevier H, Daudin B.
    Nanotechnology; 2009 Oct 14; 20(41):415602. PubMed ID: 19755728
    [Abstract] [Full Text] [Related]

  • 23. Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.
    Tung KH, Huang J, Danner A.
    J Nanosci Nanotechnol; 2016 Jun 14; 16(6):6465-9. PubMed ID: 27427737
    [Abstract] [Full Text] [Related]

  • 24. Reduced thermal conductivity in nanoengineered rough Ge and GaAs nanowires.
    Martin PN, Aksamija Z, Pop E, Ravaioli U.
    Nano Lett; 2010 Apr 14; 10(4):1120-4. PubMed ID: 20222669
    [Abstract] [Full Text] [Related]

  • 25. Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy.
    Wu J, Shao D, Dorogan VG, Li AZ, Li S, DeCuir EA, Manasreh MO, Wang ZM, Mazur YI, Salamo GJ.
    Nano Lett; 2010 Apr 14; 10(4):1512-6. PubMed ID: 20356102
    [Abstract] [Full Text] [Related]

  • 26. GaAs-Fe₃Si core-shell nanowires: nanobar magnets.
    Hilse M, Herfort J, Jenichen B, Trampert A, Hanke M, Schaaf P, Geelhaar L, Riechert H.
    Nano Lett; 2013 Apr 14; 13(12):6203-9. PubMed ID: 24274677
    [Abstract] [Full Text] [Related]

  • 27. Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.
    Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y.
    Small; 2006 Mar 14; 2(3):386-9. PubMed ID: 17193056
    [No Abstract] [Full Text] [Related]

  • 28. Self-replicating twins in nanowires.
    Yuan Z, Nakano A.
    Nano Lett; 2013 Oct 09; 13(10):4925-30. PubMed ID: 24073636
    [Abstract] [Full Text] [Related]

  • 29. [Study of Raman-PL spectra for GaAs layer on Si substrate in hot wall epitaxy].
    Tan H, Zhang P, Liu X, Wu C.
    Guang Pu Xue Yu Guang Pu Fen Xi; 2001 Aug 09; 21(4):498-500. PubMed ID: 12945272
    [Abstract] [Full Text] [Related]

  • 30. Quantum interference control of femtosecond, microA current bursts in single GaAs nanowires.
    Ruppert C, Thunich S, Abstreiter G, Fontcuberta i Morral A, Holleitner AW, Betz M.
    Nano Lett; 2010 May 12; 10(5):1799-804. PubMed ID: 20373775
    [Abstract] [Full Text] [Related]

  • 31. Nanofabrication of cylindrical STEM specimen of InGaAs/GaAs quantum dots for 3D-STEM observation.
    Ozasa K, Aoyagi Y, Iwaki M, Hara M, Maeda M.
    Ultramicroscopy; 2004 Nov 12; 101(2-4):55-61. PubMed ID: 15450652
    [Abstract] [Full Text] [Related]

  • 32. Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure.
    Yang L, Motohisa J, Fukui T, Jia LX, Zhang L, Geng MM, Chen P, Liu YL.
    Opt Express; 2009 May 25; 17(11):9337-46. PubMed ID: 19466186
    [Abstract] [Full Text] [Related]

  • 33. Ultraviolet electroluminescence from randomly assembled n-SnO(2) nanowiresp-GaN:Mg heterojunction.
    Yang HY, Yu SF, Liang HK, Lau SP, Pramana SS, Ferraris C, Cheng CW, Fan HJ.
    ACS Appl Mater Interfaces; 2010 Apr 25; 2(4):1191-4. PubMed ID: 20423138
    [Abstract] [Full Text] [Related]

  • 34. InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning.
    Huang Y, Kim TW, Xiong S, Mawst LJ, Kuech TF, Nealey PF, Dai Y, Wang Z, Guo W, Forbes D, Hubbard SM, Nesnidal M.
    Nano Lett; 2013 Apr 25; 13(12):5979-84. PubMed ID: 24274630
    [Abstract] [Full Text] [Related]

  • 35. Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching.
    Tamura Y, Kaizu T, Kiba T, Igarashi M, Tsukamoto R, Higo A, Hu W, Thomas C, Fauzi ME, Hoshii T, Yamashita I, Okada Y, Murayama A, Samukawa S.
    Nanotechnology; 2013 Jul 19; 24(28):285301. PubMed ID: 23787817
    [Abstract] [Full Text] [Related]

  • 36. Unconventional gallium oxide nanowires.
    Zhan J, Bando Y, Hu J, Xu F, Golberg D.
    Small; 2005 Aug 19; 1(8-9):883-8. PubMed ID: 17193543
    [Abstract] [Full Text] [Related]

  • 37. Synthesis and patterning of gold nanostructures on InP and GaAs via galvanic displacement.
    Hormozi Nezhad MR, Aizawa M, Porter LA, Ribbe AE, Buriak JM.
    Small; 2005 Nov 19; 1(11):1076-81. PubMed ID: 17193399
    [No Abstract] [Full Text] [Related]

  • 38. On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity.
    Chen RS, Wang SW, Lan ZH, Tsai JT, Wu CT, Chen LC, Chen KH, Huang YS, Chen CC.
    Small; 2008 Jul 19; 4(7):925-9. PubMed ID: 18512841
    [No Abstract] [Full Text] [Related]

  • 39. Super deformability and Young's modulus of GaAs nanowires.
    Wang YB, Wang LF, Joyce HJ, Gao Q, Liao XZ, Mai YW, Tan HH, Zou J, Ringer SP, Gao HJ, Jagadish C.
    Adv Mater; 2011 Mar 18; 23(11):1356-60. PubMed ID: 21400595
    [No Abstract] [Full Text] [Related]

  • 40. Fabrication and optical property of silicon oxide layer coated semiconductor gallium nitride nanowires.
    Zhang J, Zhang L, Jiang F, Yang Y, Li J.
    J Phys Chem B; 2005 Jan 13; 109(1):151-4. PubMed ID: 16850998
    [Abstract] [Full Text] [Related]

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