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Journal Abstract Search

93 related items for PubMed ID: 18512841

  • 1. On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity.
    Chen RS, Wang SW, Lan ZH, Tsai JT, Wu CT, Chen LC, Chen KH, Huang YS, Chen CC.
    Small; 2008 Jul; 4(7):925-9. PubMed ID: 18512841
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  • 4. Size-dependent photoconductivity in MBE-grown GaN-nanowires.
    Calarco R, Marso M, Richter T, Aykanat AI, Meijers R, V D Hart A, Stoica T, Lüth H.
    Nano Lett; 2005 May; 5(5):981-4. PubMed ID: 15884906
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  • 5. Effect of surface capping with poly(vinyl alcohol) on the photocarrier relaxation of ZnO nanowires.
    Bera A, Basak D.
    ACS Appl Mater Interfaces; 2009 Sep; 1(9):2066-70. PubMed ID: 20355834
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  • 8. A printable form of single-crystalline gallium nitride for flexible optoelectronic systems.
    Lee KJ, Lee J, Hwang H, Reitmeier ZJ, Davis RF, Rogers JA, Nuzzo RG.
    Small; 2005 Dec; 1(12):1164-8. PubMed ID: 17193410
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  • 9. Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires.
    Fontcuberta i Morral A, Spirkoska D, Arbiol J, Heigoldt M, Ramon Morante J, Abstreiter G.
    Small; 2008 Jul; 4(7):899-903. PubMed ID: 18504720
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  • 10. Ultraviolet electroluminescence from randomly assembled n-SnO(2) nanowiresp-GaN:Mg heterojunction.
    Yang HY, Yu SF, Liang HK, Lau SP, Pramana SS, Ferraris C, Cheng CW, Fan HJ.
    ACS Appl Mater Interfaces; 2010 Apr; 2(4):1191-4. PubMed ID: 20423138
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  • 13. Single gallium nitride nanowire lasers.
    Johnson JC, Choi HJ, Knutsen KP, Schaller RD, Yang P, Saykally RJ.
    Nat Mater; 2002 Oct; 1(2):106-10. PubMed ID: 12618824
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  • 14. Microwave synthesis of electrically conductive gold nanowires on DNA scaffolds.
    Kundu S, Liang H.
    Langmuir; 2008 Sep 02; 24(17):9668-74. PubMed ID: 18671418
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  • 15. Nanoantenna coupled UV subwavelength photodetectors based on GaN.
    Butun S, Cinel NA, Ozbay E.
    Opt Express; 2012 Jan 30; 20(3):2649-56. PubMed ID: 22330502
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  • 19. Superlinear composition-dependent photocurrent in CVD-grown monolayer MoS2(1-x)Se2x alloy devices.
    Klee V, Preciado E, Barroso D, Nguyen AE, Lee C, Erickson KJ, Triplett M, Davis B, Lu IH, Bobek S, McKinley J, Martinez JP, Mann J, Talin AA, Bartels L, Léonard F.
    Nano Lett; 2015 Apr 08; 15(4):2612-9. PubMed ID: 25723259
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