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155 related items for PubMed ID: 18576282

  • 1. High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy.
    Caroff P, Wagner JB, Dick KA, Nilsson HA, Jeppsson M, Deppert K, Samuelson L, Wallenberg LR, Wernersson LE.
    Small; 2008 Jul; 4(7):878-82. PubMed ID: 18576282
    [No Abstract] [Full Text] [Related]

  • 2. The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
    Thelander C, Dick KA, Borgström MT, Fröberg LE, Caroff P, Nilsson HA, Samuelson L.
    Nanotechnology; 2010 May 21; 21(20):205703. PubMed ID: 20413840
    [Abstract] [Full Text] [Related]

  • 3. InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning.
    Huang Y, Kim TW, Xiong S, Mawst LJ, Kuech TF, Nealey PF, Dai Y, Wang Z, Guo W, Forbes D, Hubbard SM, Nesnidal M.
    Nano Lett; 2013 May 21; 13(12):5979-84. PubMed ID: 24274630
    [Abstract] [Full Text] [Related]

  • 4. Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy.
    Lugani L, Ercolani D, Sorba L, Sibirev NV, Timofeeva MA, Dubrovskii VG.
    Nanotechnology; 2012 Mar 09; 23(9):095602. PubMed ID: 22322330
    [Abstract] [Full Text] [Related]

  • 5. Friction measurements of InAs nanowires on silicon nitride by AFM manipulation.
    Conache G, Gray SM, Ribayrol A, Fröberg LE, Samuelson L, Pettersson H, Montelius L.
    Small; 2009 Feb 09; 5(2):203-7. PubMed ID: 19058284
    [No Abstract] [Full Text] [Related]

  • 6. Growth of vertical InAs nanowires on heterostructured substrates.
    Roddaro S, Caroff P, Biasiol G, Rossi F, Bocchi C, Nilsson K, Fröberg L, Wagner JB, Samuelson L, Wernersson LE, Sorba L.
    Nanotechnology; 2009 Jul 15; 20(28):285303. PubMed ID: 19546499
    [Abstract] [Full Text] [Related]

  • 7. UV light emitting transparent conducting tin-doped indium oxide (ITO) nanowires.
    Gao J, Chen R, Li DH, Jiang L, Ye JC, Ma XC, Chen XD, Xiong QH, Sun HD, Wu T.
    Nanotechnology; 2011 May 13; 22(19):195706. PubMed ID: 21430316
    [Abstract] [Full Text] [Related]

  • 8. Coexistence of vapor-liquid-solid and vapor-solid-solid growth modes in Pd-assisted InAs nanowires.
    Heun S, Radha B, Ercolani D, Kulkarni GU, Rossi F, Grillo V, Salviati G, Beltram F, Sorba L.
    Small; 2010 Sep 06; 6(17):1935-41. PubMed ID: 20662001
    [Abstract] [Full Text] [Related]

  • 9. Van der Waals epitaxial double heterostructure: InAs/single-layer graphene/InAs.
    Hong YJ, Yang JW, Lee WH, Ruoff RS, Kim KS, Fukui T.
    Adv Mater; 2013 Dec 17; 25(47):6847-53. PubMed ID: 24115285
    [Abstract] [Full Text] [Related]

  • 10. High electron mobility InAs nanowire field-effect transistors.
    Dayeh SA, Aplin DP, Zhou X, Yu PK, Yu ET, Wang D.
    Small; 2007 Feb 17; 3(2):326-32. PubMed ID: 17199246
    [Abstract] [Full Text] [Related]

  • 11. Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires.
    Fontcuberta i Morral A, Spirkoska D, Arbiol J, Heigoldt M, Ramon Morante J, Abstreiter G.
    Small; 2008 Jul 17; 4(7):899-903. PubMed ID: 18504720
    [No Abstract] [Full Text] [Related]

  • 12. From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires.
    Potts H, Friedl M, Amaduzzi F, Tang K, Tütüncüoglu G, Matteini F, Alarcon Lladó E, McIntyre PC, Fontcuberta i Morral A.
    Nano Lett; 2016 Jan 13; 16(1):637-43. PubMed ID: 26686394
    [Abstract] [Full Text] [Related]

  • 13. Au-free epitaxial growth of InAs nanowires.
    Mandl B, Stangl J, Mårtensson T, Mikkelsen A, Eriksson J, Karlsson LS, Bauer GU, Samuelson L, Seifert W.
    Nano Lett; 2006 Aug 13; 6(8):1817-21. PubMed ID: 16895379
    [Abstract] [Full Text] [Related]

  • 14. High-quality ZnO nanowire arrays directly fabricated from photoresists.
    Cheng C, Lei M, Feng L, Wong TL, Ho KM, Fung KK, Loy MM, Yu D, Wang N.
    ACS Nano; 2009 Jan 27; 3(1):53-8. PubMed ID: 19206248
    [Abstract] [Full Text] [Related]

  • 15. Transport coefficients of InAs nanowires as a function of diameter.
    Dayeh SA, Yu ET, Wang D.
    Small; 2009 Jan 27; 5(1):77-81. PubMed ID: 19040215
    [No Abstract] [Full Text] [Related]

  • 16. Minimization of the contact resistance between InAs nanowires and metallic contacts.
    Sourribes MJ, Isakov I, Panfilova M, Warburton PA.
    Nanotechnology; 2013 Feb 01; 24(4):045703. PubMed ID: 23299854
    [Abstract] [Full Text] [Related]

  • 17. Tunable double quantum dots in InAs nanowires defined by local gate electrodes.
    Fasth C, Fuhrer A, Björk MT, Samuelson L.
    Nano Lett; 2005 Jul 01; 5(7):1487-90. PubMed ID: 16178262
    [Abstract] [Full Text] [Related]

  • 18. Excess indium and substrate effects on the growth of InAs nanowires.
    Dayeh SA, Yu ET, Wang D.
    Small; 2007 Oct 01; 3(10):1683-7. PubMed ID: 17806087
    [No Abstract] [Full Text] [Related]

  • 19. Gas detection with vertical InAs nanowire arrays.
    Offermans P, Crego-Calama M, Brongersma SH.
    Nano Lett; 2010 Jul 14; 10(7):2412-5. PubMed ID: 20503976
    [Abstract] [Full Text] [Related]

  • 20. Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
    Paladugu M, Zou J, Guo YN, Auchterlonie GJ, Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y.
    Small; 2007 Nov 14; 3(11):1873-7. PubMed ID: 17935062
    [No Abstract] [Full Text] [Related]

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