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Journal Abstract Search

155 related items for PubMed ID: 18576282

  • 21. In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires.
    Heiss M, Ketterer B, Uccelli E, Morante JR, Arbiol J, Fontcuberta i Morral A.
    Nanotechnology; 2011 May 13; 22(19):195601. PubMed ID: 21430322
    [Abstract] [Full Text] [Related]

  • 22. Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy.
    Liang BL, Wang ZM, Wang XY, Lee JH, Mazur YI, Shih CK, Salamo GJ.
    ACS Nano; 2008 Nov 25; 2(11):2219-24. PubMed ID: 19206386
    [Abstract] [Full Text] [Related]

  • 23. Defect-free <110> zinc-blende structured InAs nanowires catalyzed by palladium.
    Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Tan HH, Jagadish C, Zou J.
    Nano Lett; 2012 Nov 14; 12(11):5744-9. PubMed ID: 23030768
    [Abstract] [Full Text] [Related]

  • 24. Comparative study of low temperature growth of InAs and InMnAs quantum dots.
    Placidi E, Zallo E, Arciprete F, Fanfoni M, Patella F, Balzarotti A.
    Nanotechnology; 2011 May 13; 22(19):195602. PubMed ID: 21430313
    [Abstract] [Full Text] [Related]

  • 25. Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices.
    Hou JJ, Han N, Wang F, Xiu F, Yip S, Hui AT, Hung T, Ho JC.
    ACS Nano; 2012 Apr 24; 6(4):3624-30. PubMed ID: 22443352
    [Abstract] [Full Text] [Related]

  • 26. Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.
    Yu Y, Li MF, He JF, He YM, Wei YJ, He Y, Zha GW, Shang XJ, Wang J, Wang LJ, Wang GW, Ni HQ, Lu CY, Niu ZC.
    Nano Lett; 2013 Apr 10; 13(4):1399-404. PubMed ID: 23464836
    [Abstract] [Full Text] [Related]

  • 27. Sub 60 mV/decade switch using an InAs nanowire-Si heterojunction and turn-on voltage shift with a pulsed doping technique.
    Tomioka K, Yoshimura M, Fukui T.
    Nano Lett; 2013 Apr 10; 13(12):5822-6. PubMed ID: 24215512
    [Abstract] [Full Text] [Related]

  • 28. Scanned probe imaging of quantum dots inside InAs nanowires.
    Bleszynski AC, Zwanenburg FA, Westervelt RM, Roest AL, Bakkers EP, Kouwenhoven LP.
    Nano Lett; 2007 Sep 10; 7(9):2559-62. PubMed ID: 17691848
    [Abstract] [Full Text] [Related]

  • 29. Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy.
    Fujita K, Yamanishi M, Furuta S, Tanaka K, Edamura T, Kubis T, Klimeck G.
    Opt Express; 2012 Aug 27; 20(18):20647-58. PubMed ID: 23037112
    [Abstract] [Full Text] [Related]

  • 30. Statistical study of effective anisotropy field in ordered ferromagnetic nanowire arrays.
    Zhao S, Clime L, Chan K, Normandin F, Roberge H, Yelon A, Cochrane RW, Veres T.
    J Nanosci Nanotechnol; 2007 Jan 27; 7(1):381-6. PubMed ID: 17455508
    [Abstract] [Full Text] [Related]

  • 31. Self-aligned charge read-out for InAs nanowire quantum dots.
    Shorubalko I, Leturcq R, Pfund A, Tyndall D, Krischek R, Schön S, Ensslin K.
    Nano Lett; 2008 Feb 27; 8(2):382-5. PubMed ID: 18197718
    [Abstract] [Full Text] [Related]

  • 32. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy.
    So H, Pan D, Li L, Zhao J.
    Nanotechnology; 2017 Mar 01; 28(13):135704. PubMed ID: 28256450
    [Abstract] [Full Text] [Related]

  • 33. Evolution of epitaxial InAs nanowires on GaAs 111B.
    Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C.
    Small; 2009 Mar 01; 5(3):366-9. PubMed ID: 19152357
    [No Abstract] [Full Text] [Related]

  • 34. Effects of crystal phase mixing on the electrical properties of InAs nanowires.
    Thelander C, Caroff P, Plissard S, Dey AW, Dick KA.
    Nano Lett; 2011 Jun 08; 11(6):2424-9. PubMed ID: 21528899
    [Abstract] [Full Text] [Related]

  • 35. InAs/InP radial nanowire heterostructures as high electron mobility devices.
    Jiang X, Xiong Q, Nam S, Qian F, Li Y, Lieber CM.
    Nano Lett; 2007 Oct 08; 7(10):3214-8. PubMed ID: 17867718
    [Abstract] [Full Text] [Related]

  • 36. Shear stress measurements on InAs nanowires by AFM manipulation.
    Bordag M, Ribayrol A, Conache G, Fröberg LE, Gray S, Samuelson L, Montelius L, Pettersson H.
    Small; 2007 Aug 08; 3(8):1398-401. PubMed ID: 17657751
    [No Abstract] [Full Text] [Related]

  • 37. Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure.
    Yang L, Motohisa J, Fukui T, Jia LX, Zhang L, Geng MM, Chen P, Liu YL.
    Opt Express; 2009 May 25; 17(11):9337-46. PubMed ID: 19466186
    [Abstract] [Full Text] [Related]

  • 38. Pressure dependence of Raman spectrum in InAs nanowires.
    Yazji S, Zardo I, Hertenberger S, Morkötter S, Koblmüller G, Abstreiter G, Postorino P.
    J Phys Condens Matter; 2014 Jun 11; 26(23):235301. PubMed ID: 25932470
    [Abstract] [Full Text] [Related]

  • 39. Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
    Egard M, Johansson S, Johansson AC, Persson KM, Dey AW, Borg BM, Thelander C, Wernersson LE, Lind E.
    Nano Lett; 2010 Mar 10; 10(3):809-12. PubMed ID: 20131812
    [Abstract] [Full Text] [Related]

  • 40. Epitaxial integration of nanowires in microsystems by local micrometer-scale vapor-phase epitaxy.
    Mølhave K, Wacaser BA, Petersen DH, Wagner JB, Samuelson L, Bøggild P.
    Small; 2008 Oct 10; 4(10):1741-6. PubMed ID: 18819133
    [Abstract] [Full Text] [Related]

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