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Journal Abstract Search

240 related items for PubMed ID: 19032036

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  • 3. Synthesis and characterization of germanium oxide nanowires.
    Kalyanikutty KP, Gundiah G, Govindaraj A, Rao CN.
    J Nanosci Nanotechnol; 2005 Mar; 5(3):421-4. PubMed ID: 15913249
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  • 4. Vertically oriented germanium nanowires grown from gold colloids on silicon substrates and subsequent gold removal.
    Woodruff JH, Ratchford JB, Goldthorpe IA, McIntyre PC, Chidsey CE.
    Nano Lett; 2007 Jun; 7(6):1637-42. PubMed ID: 17530912
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  • 5. Band-offset driven efficiency of the doping of SiGe core-shell nanowires.
    Amato M, Ossicini S, Rurali R.
    Nano Lett; 2011 Feb 09; 11(2):594-8. PubMed ID: 21188962
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  • 6. Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass.
    Zimmler MA, Stichtenoth D, Ronning C, Yi W, Narayanamurti V, Voss T, Capasso F.
    Nano Lett; 2008 Jun 09; 8(6):1695-9. PubMed ID: 18462004
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  • 7. Fabrication of suspended silicon nanowire arrays.
    Lee KN, Jung SW, Shin KS, Kim WH, Lee MH, Seong WK.
    Small; 2008 May 09; 4(5):642-8. PubMed ID: 18431721
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  • 8. CMOS-analogous wafer-scale nanotube-on-insulator approach for submicrometer devices and integrated circuits using aligned nanotubes.
    Ryu K, Badmaev A, Wang C, Lin A, Patil N, Gomez L, Kumar A, Mitra S, Wong HS, Zhou C.
    Nano Lett; 2009 Jan 09; 9(1):189-97. PubMed ID: 19086836
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  • 9. Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping.
    Yan Q, Huang B, Yu J, Zheng F, Zang J, Wu J, Gu BL, Liu F, Duan W.
    Nano Lett; 2007 Jun 09; 7(6):1469-73. PubMed ID: 17461605
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  • 10. Characterization of impurity doping and stress in Si/Ge and Ge/Si core-shell nanowires.
    Fukata N, Mitome M, Sekiguchi T, Bando Y, Kirkham M, Hong JI, Wang ZL, Snyder RL.
    ACS Nano; 2012 Oct 23; 6(10):8887-95. PubMed ID: 22947081
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  • 11. Selective tuning of the electronic properties of coaxial nanocables through exohedral doping.
    Filho AG, Meunier V, Terrones M, Sumpter BG, Barros EB, Villalpando-Páez F, Filho JM, Kim YA, Muramatsu H, Hayashi T, Endo M, Dresselhaus MS.
    Nano Lett; 2007 Aug 23; 7(8):2383-8. PubMed ID: 17602599
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  • 12. Measuring the capacitance of individual semiconductor nanowires for carrier mobility assessment.
    Tu R, Zhang L, Nishi Y, Dai H.
    Nano Lett; 2007 Jun 23; 7(6):1561-5. PubMed ID: 17488051
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  • 13. Structure and elemental distribution of (Ga,Mn)N nanowires.
    Urban A, Malindretos J, Seibt M, Rizzi A.
    Nano Lett; 2011 Feb 09; 11(2):398-401. PubMed ID: 21171626
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  • 14. Highly conductive coaxial SnO(2)-In(2)O(3) heterostructured nanowires for Li ion battery electrodes.
    Kim DW, Hwang IS, Kwon SJ, Kang HY, Park KS, Choi YJ, Choi KJ, Park JG.
    Nano Lett; 2007 Oct 09; 7(10):3041-5. PubMed ID: 17760477
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  • 15. Metal/Conducting-polymer composite nanowires.
    Meenach SA, Burdick J, Kunwar A, Wang J.
    Small; 2007 Feb 09; 3(2):239-43. PubMed ID: 17199245
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  • 16. Determination of transport properties in chromium disilicide nanowires via combined thermoelectric and structural characterizations.
    Zhou F, Szczech J, Pettes MT, Moore AL, Jin S, Shi L.
    Nano Lett; 2007 Jun 09; 7(6):1649-54. PubMed ID: 17508772
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  • 17. Transport modulation in Ge/Si core/shell nanowires through controlled synthesis of doped Si shells.
    Zhao Y, Smith JT, Appenzeller J, Yang C.
    Nano Lett; 2011 Apr 13; 11(4):1406-11. PubMed ID: 21417251
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  • 18. Ultralong single-crystal metallic Ni2Si nanowires with low resistivity.
    Song Y, Schmitt AL, Jin S.
    Nano Lett; 2007 Apr 13; 7(4):965-9. PubMed ID: 17385935
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  • 19. Direct observation of the structural component of the metal-insulator phase transition and growth habits of epitaxially grown VO2 nanowires.
    Sohn JI, Joo HJ, Porter AE, Choi CJ, Kim K, Kang DJ, Welland ME.
    Nano Lett; 2007 Jun 13; 7(6):1570-4. PubMed ID: 17508769
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  • 20. Si/a-Si core/shell nanowires as nonvolatile crossbar switches.
    Dong Y, Yu G, McAlpine MC, Lu W, Lieber CM.
    Nano Lett; 2008 Feb 13; 8(2):386-91. PubMed ID: 18220442
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