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Journal Abstract Search

205 related items for PubMed ID: 19099512

  • 1. Doping limits of grown in situ doped silicon nanowires using phosphine.
    Schmid H, Björk MT, Knoch J, Karg S, Riel H, Riess W.
    Nano Lett; 2009 Jan; 9(1):173-7. PubMed ID: 19099512
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  • 2. Contact doping of silicon wafers and nanostructures with phosphine oxide monolayers.
    Hazut O, Agarwala A, Amit I, Subramani T, Zaidiner S, Rosenwaks Y, Yerushalmi R.
    ACS Nano; 2012 Nov 27; 6(11):10311-8. PubMed ID: 23083376
    [Abstract] [Full Text] [Related]

  • 3. A simple route to growth of silicon nanowires.
    Pan H, Ni Z, Poh C, Feng YP, Lin J, Shen Z.
    J Nanosci Nanotechnol; 2008 Nov 27; 8(11):5787-90. PubMed ID: 19198306
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  • 4. Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.
    Hsin CL, He JH, Lee CY, Wu WW, Yeh PH, Chen LJ, Wang ZL.
    Nano Lett; 2007 Jun 27; 7(6):1799-803. PubMed ID: 17516681
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  • 7. Charge carrier separation in modulation doped coaxial semiconductor nanowires.
    Nduwimana A, Wang XQ.
    Nano Lett; 2009 Jan 27; 9(1):283-6. PubMed ID: 19143504
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  • 9. Effect of HCl on the doping and shape control of silicon nanowires.
    Gentile P, Solanki A, Pauc N, Oehler F, Salem B, Rosaz G, Baron T, Den Hertog M, Calvo V.
    Nanotechnology; 2012 Jun 01; 23(21):215702. PubMed ID: 22551776
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  • 10. Preferential orientation of a chiral semiconducting carbon nanotube on the locally depassivated Si(100)-2 x 1:H surface identified by scanning tunneling microscopy.
    Albrecht PM, Barraza-Lopez S, Lyding JW.
    Small; 2007 Aug 01; 3(8):1402-6. PubMed ID: 17583550
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  • 11. Fabrication and electrical properties of si nanowires synthesized by Al catalyzed vapor-liquid-solid growth.
    Ke Y, Weng X, Redwing JM, Eichfeld CM, Swisher TR, Mohney SE, Habib YM.
    Nano Lett; 2009 Dec 01; 9(12):4494-9. PubMed ID: 19904918
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  • 12. Tunable electrical properties of silicon nanowires via surface-ambient chemistry.
    Yuan GD, Zhou YB, Guo CS, Zhang WJ, Tang YB, Li YQ, Chen ZH, He ZB, Zhang XJ, Wang PF, Bello I, Zhang RQ, Lee CS, Lee ST.
    ACS Nano; 2010 Jun 22; 4(6):3045-52. PubMed ID: 20565140
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  • 15. Structural characteristics of ternary In(x)Ga(1-x)As nanowires on Si (111) grown via Au-catalyzed VLS.
    Shin JC, Kim DY, Park JH, Oh SD, Ko HJ, Han MS, Kim JH, Choi KJ, Kim HJ.
    J Nanosci Nanotechnol; 2013 May 22; 13(5):3511-4. PubMed ID: 23858890
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  • 16. Measurement of the bending strength of vapor-liquid-solid grown silicon nanowires.
    Hoffmann S, Utke I, Moser B, Michler J, Christiansen SH, Schmidt V, Senz S, Werner P, Gösele U, Ballif C.
    Nano Lett; 2006 Apr 22; 6(4):622-5. PubMed ID: 16608255
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  • 17. Control of gold surface diffusion on si nanowires.
    den Hertog MI, Rouviere JL, Dhalluin F, Desré PJ, Gentile P, Ferret P, Oehler F, Baron T.
    Nano Lett; 2008 May 22; 8(5):1544-50. PubMed ID: 18422363
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  • 19. Self-assembly of copper micro/nanoscale parallel wires by electrodeposition on a silicon substrate.
    Zhang M, Zuo G, Zong Z, Cheng H, He Z, Yang C, Zou G.
    Small; 2006 Jun 22; 2(6):727-31. PubMed ID: 17193112
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