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Journal Abstract Search

201 related items for PubMed ID: 19143502

  • 21. Fast growth synthesis of GaAs nanowires with exceptional length.
    Ramdani MR, Gil E, Leroux Ch, André Y, Trassoudaine A, Castelluci D, Bideux L, Monier G, Robert-Goumet C, Kupka R.
    Nano Lett; 2010 May 12; 10(5):1836-41. PubMed ID: 20380477
    [Abstract] [Full Text] [Related]

  • 22. Quantum interference control of femtosecond, microA current bursts in single GaAs nanowires.
    Ruppert C, Thunich S, Abstreiter G, Fontcuberta i Morral A, Holleitner AW, Betz M.
    Nano Lett; 2010 May 12; 10(5):1799-804. PubMed ID: 20373775
    [Abstract] [Full Text] [Related]

  • 23. Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.
    Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y.
    Small; 2006 Mar 12; 2(3):386-9. PubMed ID: 17193056
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  • 24. Effects of gold diffusion on n-type doping of GaAs nanowires.
    Tambe MJ, Ren S, Gradecak S.
    Nano Lett; 2010 Nov 10; 10(11):4584-9. PubMed ID: 20939583
    [Abstract] [Full Text] [Related]

  • 25. Photocurrent induced by nonradiative energy transfer from nanocrystal quantum dots to adjacent silicon nanowire conducting channels: toward a new solar cell paradigm.
    Lu S, Lingley Z, Asano T, Harris D, Barwicz T, Guha S, Madhukar A.
    Nano Lett; 2009 Dec 10; 9(12):4548-52. PubMed ID: 19856942
    [Abstract] [Full Text] [Related]

  • 26. Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires.
    Fontcuberta i Morral A, Spirkoska D, Arbiol J, Heigoldt M, Ramon Morante J, Abstreiter G.
    Small; 2008 Jul 10; 4(7):899-903. PubMed ID: 18504720
    [No Abstract] [Full Text] [Related]

  • 27. Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures.
    Liu XQ, Lu W, Shen SC, Tan HH, Jagadish C, Zou J.
    J Nanosci Nanotechnol; 2001 Dec 10; 1(4):389-92. PubMed ID: 12914079
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  • 31. Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy.
    Parkinson P, Joyce HJ, Gao Q, Tan HH, Zhang X, Zou J, Jagadish C, Herz LM, Johnston MB.
    Nano Lett; 2009 Sep 10; 9(9):3349-53. PubMed ID: 19736975
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  • 35. Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates.
    Aagesen M, Johnson E, Sørensen CB, Mariager SO, Feidenhans'l R, Spiecker E, Nygård J, Lindelof PE.
    Nat Nanotechnol; 2007 Dec 10; 2(12):761-4. PubMed ID: 18654427
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  • 36. Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.
    Patriarche G, Glas F, Tchernycheva M, Sartel C, Largeau L, Harmand JC, Cirlin GE.
    Nano Lett; 2008 Jun 10; 8(6):1638-43. PubMed ID: 18471022
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  • 37. Effect of carbon tetrabromide on the morphology of GaAs nanowires.
    Salehzadeh O, Watkins SP.
    Nanotechnology; 2011 Apr 22; 22(16):165603. PubMed ID: 21393824
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  • 39. Manganese-induced growth of GaAs nanowires.
    Martelli F, Rubini S, Piccin M, Bais G, Jabeen F, De Franceschi S, Grillo V, Carlino E, D'Acapito F, Boscherini F, Cabrini S, Lazzarino M, Businaro L, Romanato F, Franciosi A.
    Nano Lett; 2006 Sep 22; 6(9):2130-4. PubMed ID: 16968038
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  • 40. Tailoring the vapor-liquid-solid growth toward the self-assembly of GaAs nanowire junctions.
    Dai X, Dayeh SA, Veeramuthu V, Larrue A, Wang J, Su H, Soci C.
    Nano Lett; 2011 Nov 09; 11(11):4947-52. PubMed ID: 21967168
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