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Journal Abstract Search

309 related items for PubMed ID: 19198339

  • 1. Comparison between the electrical properties of ZnO nanowires based field effect transistors fabricated by back- and top-gate approaches.
    Park YK, Umar A, Kim SH, Kim JH, Lee EW, Vaseem M, Hahn YB.
    J Nanosci Nanotechnol; 2008 Nov; 8(11):6010-6. PubMed ID: 19198339
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  • 2. Single ZnO nanowire based high-performance field effect transistors (FETs).
    Park YK, Umar A, Kim JS, Yang HY, Lee JS, Hahn YB.
    J Nanosci Nanotechnol; 2009 Oct; 9(10):5839-44. PubMed ID: 19908462
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  • 5. High electron mobility InAs nanowire field-effect transistors.
    Dayeh SA, Aplin DP, Zhou X, Yu PK, Yu ET, Wang D.
    Small; 2007 Feb; 3(2):326-32. PubMed ID: 17199246
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  • 6. The growth and characterization of ZnO/ZnTe core-shell nanowires and the electrical properties of ZnO/ZnTe core-shell nanowire field effect transistor.
    Chao HY, You SH, Lu JY, Cheng JH, Chang YH, Liang CT, Wu CT.
    J Nanosci Nanotechnol; 2011 Mar; 11(3):2042-6. PubMed ID: 21449346
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  • 7. Realizing lateral wrap-gated nanowire FETs: controlling gate length with chemistry rather than lithography.
    Storm K, Nylund G, Samuelson L, Micolich AP.
    Nano Lett; 2012 Jan 11; 12(1):1-6. PubMed ID: 21322605
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  • 8. Ambient air effects on electrical transport properties of ZnO nanorod transistors.
    Park JY, Kim JJ, Kim SS.
    J Nanosci Nanotechnol; 2008 Nov 11; 8(11):5929-33. PubMed ID: 19198328
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  • 10. Fabrication of suspended silicon nanowire arrays.
    Lee KN, Jung SW, Shin KS, Kim WH, Lee MH, Seong WK.
    Small; 2008 May 11; 4(5):642-8. PubMed ID: 18431721
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  • 11. Novel polymer nanowire crystals of diketopyrrolopyrrole-based copolymer with excellent charge transport properties.
    Kim JH, Lee DH, Yang DS, Heo DU, Kim KH, Shin J, Kim HJ, Baek KY, Lee K, Baik H, Cho MJ, Choi DH.
    Adv Mater; 2013 Aug 14; 25(30):4102-6. PubMed ID: 23780712
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  • 14. Carbon nanotube multi-channeled field-effect transistors.
    Chen C, Zhang Y.
    J Nanosci Nanotechnol; 2006 Dec 14; 6(12):3789-93. PubMed ID: 17260441
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  • 16. Realization of a silicon nanowire vertical surround-gate field-effect transistor.
    Schmidt V, Riel H, Senz S, Karg S, Riess W, Gösele U.
    Small; 2006 Jan 14; 2(1):85-8. PubMed ID: 17193560
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  • 17. Temperature dependant structural and electrical properties of ZnO nanowire networks.
    Al-Heniti S, Badran RI, Umar A, Al-Ghamdi A, Kim SH, Al-Marzouki F, Al-Hajry A, Al-Sayari SA, Al-Harbi T.
    J Nanosci Nanotechnol; 2012 Jan 14; 12(1):68-74. PubMed ID: 22523947
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  • 20. The effect of excimer laser annealing on ZnO nanowires and their field effect transistors.
    Maeng J, Heo S, Jo G, Choe M, Kim S, Hwang H, Lee T.
    Nanotechnology; 2009 Mar 04; 20(9):095203. PubMed ID: 19417481
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