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Journal Abstract Search

832 related items for PubMed ID: 19206566

  • 1. Self-assembling silicon nanowires for device applications using the nanochannel-guided "grow-in-place" approach.
    Shan Y, Fonash SJ.
    ACS Nano; 2008 Mar; 2(3):429-34. PubMed ID: 19206566
    [Abstract] [Full Text] [Related]

  • 2. Realization of a silicon nanowire vertical surround-gate field-effect transistor.
    Schmidt V, Riel H, Senz S, Karg S, Riess W, Gösele U.
    Small; 2006 Jan; 2(1):85-8. PubMed ID: 17193560
    [No Abstract] [Full Text] [Related]

  • 3. Fabrication of suspended silicon nanowire arrays.
    Lee KN, Jung SW, Shin KS, Kim WH, Lee MH, Seong WK.
    Small; 2008 May; 4(5):642-8. PubMed ID: 18431721
    [Abstract] [Full Text] [Related]

  • 4. Semiconductors: chip maker turns to self-assembly.
    Rodgers P.
    Nat Nanotechnol; 2007 Jun; 2(6):342. PubMed ID: 18654302
    [No Abstract] [Full Text] [Related]

  • 5. Fabrication of poly-silicon nano-wire transistors on plastic substrates.
    Park C, Lee S, Choi M, Kang M, Jung Y, Hwang S, Ahn D, Lee J, Song C.
    J Nanosci Nanotechnol; 2007 Nov; 7(11):4150-3. PubMed ID: 18047139
    [Abstract] [Full Text] [Related]

  • 6. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.
    Chang YK, Hong FC.
    Nanotechnology; 2009 May 13; 20(19):195302. PubMed ID: 19420638
    [Abstract] [Full Text] [Related]

  • 7. Water-mediated Al metal transfer printing with contact inking for fabrication of thin-film transistors.
    Oh K, Lee BH, Hwang JK, Lee H, Im S, Sung MM.
    Small; 2009 Mar 13; 5(5):558-61. PubMed ID: 19199334
    [No Abstract] [Full Text] [Related]

  • 8. Fabrication of silver vanadium oxide and V2O5 nanowires for electrochromics.
    Xiong C, Aliev AE, Gnade B, Balkus KJ.
    ACS Nano; 2008 Feb 13; 2(2):293-301. PubMed ID: 19206630
    [Abstract] [Full Text] [Related]

  • 9. Nanomaterials: silicon goes thermoelectric.
    Rodgers P.
    Nat Nanotechnol; 2008 Feb 13; 3(2):76. PubMed ID: 18654464
    [No Abstract] [Full Text] [Related]

  • 10. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
    Yoon A, Hong WK, Lee T.
    J Nanosci Nanotechnol; 2007 Nov 13; 7(11):4101-5. PubMed ID: 18047128
    [Abstract] [Full Text] [Related]

  • 11. The morphology of silicon nanowires grown in the presence of trimethylaluminium.
    Oehler F, Gentile P, Baron T, Hertog MD, Rouvière J, Ferret P.
    Nanotechnology; 2009 Jun 17; 20(24):245602. PubMed ID: 19471089
    [Abstract] [Full Text] [Related]

  • 12. Semiconductor nanowires: from self-organization to patterned growth.
    Fan HJ, Werner P, Zacharias M.
    Small; 2006 Jun 17; 2(6):700-17. PubMed ID: 17193109
    [Abstract] [Full Text] [Related]

  • 13. Fabrication of nanopores in silicon chips using feedback chemical etching.
    Park SR, Peng H, Ling XS.
    Small; 2007 Jan 17; 3(1):116-9. PubMed ID: 17294481
    [No Abstract] [Full Text] [Related]

  • 14. A simple route to growth of silicon nanowires.
    Pan H, Ni Z, Poh C, Feng YP, Lin J, Shen Z.
    J Nanosci Nanotechnol; 2008 Nov 17; 8(11):5787-90. PubMed ID: 19198306
    [Abstract] [Full Text] [Related]

  • 15. Evaluation of solution-processed reduced graphene oxide films as transparent conductors.
    Becerril HA, Mao J, Liu Z, Stoltenberg RM, Bao Z, Chen Y.
    ACS Nano; 2008 Mar 17; 2(3):463-70. PubMed ID: 19206571
    [Abstract] [Full Text] [Related]

  • 16. Hybrid permeable-base transistors based on an indenofluorene derivative.
    Serbena JP, Hümmelgen IA, Hadizad T, Wang ZY.
    Small; 2006 Mar 17; 2(3):372-4. PubMed ID: 17193053
    [No Abstract] [Full Text] [Related]

  • 17. Fully depleted nanowire field-effect transistor in inversion mode.
    Hayden O, Björk MT, Schmid H, Riel H, Drechsler U, Karg SF, Lörtscher E, Riess W.
    Small; 2007 Feb 17; 3(2):230-4. PubMed ID: 17199244
    [No Abstract] [Full Text] [Related]

  • 18. Nanoparticle-coated n-ZnO/p-Si photodiodes with improved photoresponsivities and acceptance angles for potential solar cell applications.
    Chen CP, Lin PH, Chen LY, Ke MY, Cheng YW, Huang J.
    Nanotechnology; 2009 Jun 17; 20(24):245204. PubMed ID: 19468172
    [Abstract] [Full Text] [Related]

  • 19. Selective growth of vertical ZnO nanowire arrays using chemically anchored gold nanoparticles.
    Ito D, Jespersen ML, Hutchison JE.
    ACS Nano; 2008 Oct 28; 2(10):2001-6. PubMed ID: 19206444
    [Abstract] [Full Text] [Related]

  • 20. Tunable electrical properties of silicon nanowires via surface-ambient chemistry.
    Yuan GD, Zhou YB, Guo CS, Zhang WJ, Tang YB, Li YQ, Chen ZH, He ZB, Zhang XJ, Wang PF, Bello I, Zhang RQ, Lee CS, Lee ST.
    ACS Nano; 2010 Jun 22; 4(6):3045-52. PubMed ID: 20565140
    [Abstract] [Full Text] [Related]

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