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Journal Abstract Search


2353 related items for PubMed ID: 19331320

  • 1.
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  • 2. n-Channel semiconductor materials design for organic complementary circuits.
    Usta H, Facchetti A, Marks TJ.
    Acc Chem Res; 2011 Jul 19; 44(7):501-10. PubMed ID: 21615105
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  • 4. Air-stable, solution-processable n-channel and ambipolar semiconductors for thin-film transistors based on the indenofluorenebis(dicyanovinylene) core.
    Usta H, Facchetti A, Marks TJ.
    J Am Chem Soc; 2008 Jul 09; 130(27):8580-1. PubMed ID: 18543911
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  • 6. Phenacyl-thiophene and quinone semiconductors designed for solution processability and air-stability in high mobility n-channel field-effect transistors.
    Letizia JA, Cronin S, Ortiz RP, Facchetti A, Ratner MA, Marks TJ.
    Chemistry; 2010 Feb 08; 16(6):1911-28. PubMed ID: 20039340
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  • 7. n-channel polymers by design: optimizing the interplay of solubilizing substituents, crystal packing, and field-effect transistor characteristics in polymeric bithiophene-imide semiconductors.
    Letizia JA, Salata MR, Tribout CM, Facchetti A, Ratner MA, Marks TJ.
    J Am Chem Soc; 2008 Jul 30; 130(30):9679-94. PubMed ID: 18593160
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  • 8. Thieno[3,4-c]pyrrole-4,6-dione-based polymer semiconductors: toward high-performance, air-stable organic thin-film transistors.
    Guo X, Ortiz RP, Zheng Y, Kim MG, Zhang S, Hu Y, Lu G, Facchetti A, Marks TJ.
    J Am Chem Soc; 2011 Aug 31; 133(34):13685-97. PubMed ID: 21793505
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  • 9. High-performance air-stable n-channel organic thin film transistors based on halogenated perylene bisimide semiconductors.
    Schmidt R, Oh JH, Sun YS, Deppisch M, Krause AM, Radacki K, Braunschweig H, Könemann M, Erk P, Bao Z, Würthner F.
    J Am Chem Soc; 2009 May 06; 131(17):6215-28. PubMed ID: 19354212
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  • 12. Gate dielectric chemical structure-organic field-effect transistor performance correlations for electron, hole, and ambipolar organic semiconductors.
    Yoon MH, Kim C, Facchetti A, Marks TJ.
    J Am Chem Soc; 2006 Oct 04; 128(39):12851-69. PubMed ID: 17002380
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  • 15. Core-expanded naphthalene diimides fused with 2-(1,3-dithiol-2-ylidene)malonitrile groups for high-performance, ambient-stable, solution-processed n-channel organic thin film transistors.
    Gao X, Di CA, Hu Y, Yang X, Fan H, Zhang F, Liu Y, Li H, Zhu D.
    J Am Chem Soc; 2010 Mar 24; 132(11):3697-9. PubMed ID: 20187650
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  • 16. Solution-processable n-type organic field-effect transistor (OFET) materials based on carbonyl-bridged bithiazole and dioxocyclopentene-annelated thiophenes.
    Nitani M, Ie Y, Tada H, Aso Y.
    Chem Asian J; 2011 Sep 05; 6(9):2352-61. PubMed ID: 21714098
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  • 17. Acetylenic spacers in phenylene end-substituted oligothiophene core for highly air-stable organic field-effect transistors.
    Diallo AK, Videlot-Ackermann C, Marsal P, Brisset H, Fages F, Kumagai A, Yoshimoto N, Serein-Spirau F, Lère-Porte JP.
    Phys Chem Chem Phys; 2010 Apr 21; 12(15):3845-51. PubMed ID: 20358078
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  • 18. Fluorocarbon-modified organic semiconductors: molecular architecture, electronic, and crystal structure tuning of arene- versus fluoroarene-thiophene oligomer thin-film properties.
    Yoon MH, Facchetti A, Stern CE, Marks TJ.
    J Am Chem Soc; 2006 May 03; 128(17):5792-801. PubMed ID: 16637648
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  • 19. Air-stable n-type organic field-effect transistors based on solution-processable, electronegative oligomers containing dicyanomethylene-substituted cyclopenta[b]thiophene.
    Ie Y, Nishida K, Karakawa M, Tada H, Asano A, Saeki A, Seki S, Aso Y.
    Chemistry; 2011 Apr 18; 17(17):4750-8. PubMed ID: 21433124
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  • 20. Solution-processed and air-stable n-type organic thin-film transistors based on thiophene-fused dicyanoquinonediimine (DCNQI) deriatives.
    Chen S, Zhao Y, Bolag A, Nishida J, Liu Y, Yamashita Y.
    ACS Appl Mater Interfaces; 2012 Aug 18; 4(8):3994-4000. PubMed ID: 22845051
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