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167 related items for PubMed ID: 19367852

  • 1. Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts.
    Dheeraj DL, Patriarche G, Zhou H, Hoang TB, Moses AF, Grønsberg S, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2008 Dec; 8(12):4459-63. PubMed ID: 19367852
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  • 2. Zinc blende GaAsSb nanowires grown by molecular beam epitaxy.
    Dheeraj DL, Patriarche G, Largeau L, Zhou HL, van Helvoort AT, Glas F, Harmand JC, Fimland BO, Weman H.
    Nanotechnology; 2008 Jul 09; 19(27):275605. PubMed ID: 21828712
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  • 3. Engineering parallel and perpendicular polarized photoluminescence from a single semiconductor nanowire by crystal phase control.
    Ba Hoang T, Moses AF, Ahtapodov L, Zhou H, Dheeraj DL, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2010 Aug 11; 10(8):2927-33. PubMed ID: 20604543
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  • 4. A story told by a single nanowire: optical properties of wurtzite GaAs.
    Ahtapodov L, Todorovic J, Olk P, Mjåland T, Slåttnes P, Dheeraj DL, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2012 Dec 12; 12(12):6090-5. PubMed ID: 23131181
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  • 5. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy.
    Dheeraj DL, Munshi AM, Scheffler M, van Helvoort AT, Weman H, Fimland BO.
    Nanotechnology; 2013 Jan 11; 24(1):015601. PubMed ID: 23220972
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  • 6. Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy.
    Dursap T, Vettori M, Botella C, Regreny P, Blanchard N, Gendry M, Chauvin N, Bugnet M, Danescu A, Penuelas J.
    Nanotechnology; 2021 Apr 09; 32(15):155602. PubMed ID: 33429384
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  • 7. Polytypism in GaAs/GaNAs core-shell nanowires.
    Yukimune M, Fujiwara R, Mita T, Ishikawa F.
    Nanotechnology; 2020 Dec 11; 31(50):505608. PubMed ID: 32937605
    [Abstract] [Full Text] [Related]

  • 8. Zinc blende and wurtzite crystal phase mixing and transition in indium phosphide nanowires.
    Ikejiri K, Kitauchi Y, Tomioka K, Motohisa J, Fukui T.
    Nano Lett; 2011 Oct 12; 11(10):4314-8. PubMed ID: 21875079
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  • 9. Crystal phase engineering of self-catalyzed GaAs nanowires using a RHEED diagram.
    Dursap T, Vettori M, Danescu A, Botella C, Regreny P, Patriarche G, Gendry M, Penuelas J.
    Nanoscale Adv; 2020 May 19; 2(5):2127-2134. PubMed ID: 36132505
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  • 10. Self-catalyzed MBE grown GaAs/GaAs(x)Sb(1-x) core-shell nanowires in ZB and WZ crystal structures.
    Ghalamestani SG, Munshi AM, Dheeraj DL, Fimland BO, Weman H, Dick KA.
    Nanotechnology; 2013 Oct 11; 24(40):405601. PubMed ID: 24028926
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  • 14. Can antimonide-based nanowires form wurtzite crystal structure?
    Gorji Ghalamestani S, Lehmann S, Dick KA.
    Nanoscale; 2016 Feb 07; 8(5):2778-86. PubMed ID: 26763161
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  • 15. Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces.
    Hjort M, Lehmann S, Knutsson J, Timm R, Jacobsson D, Lundgren E, Dick KA, Mikkelsen A.
    Nano Lett; 2013 Sep 11; 13(9):4492-8. PubMed ID: 23941328
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  • 20. A general approach for sharp crystal phase switching in InAs, GaAs, InP, and GaP nanowires using only group V flow.
    Lehmann S, Wallentin J, Jacobsson D, Deppert K, Dick KA.
    Nano Lett; 2013 Sep 11; 13(9):4099-105. PubMed ID: 23902379
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