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Journal Abstract Search

409 related items for PubMed ID: 19399078

  • 1. Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate.
    Tanabe K, Nomura M, Guimard D, Iwamoto S, Arakawa Y.
    Opt Express; 2009 Apr 27; 17(9):7036-42. PubMed ID: 19399078
    [Abstract] [Full Text] [Related]

  • 2. Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.
    Lee A, Jiang Q, Tang M, Seeds A, Liu H.
    Opt Express; 2012 Sep 24; 20(20):22181-7. PubMed ID: 23037366
    [Abstract] [Full Text] [Related]

  • 3. Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.
    Tanabe K, Guimard D, Bordel D, Iwamoto S, Arakawa Y.
    Opt Express; 2010 May 10; 18(10):10604-8. PubMed ID: 20588912
    [Abstract] [Full Text] [Related]

  • 4. Optically pumped rolled-up InGaAs/GaAs quantum dot microtube lasers.
    Li F, Mi Z.
    Opt Express; 2009 Oct 26; 17(22):19933-9. PubMed ID: 19997217
    [Abstract] [Full Text] [Related]

  • 5. Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities.
    Tawara T, Kamada H, Zhang YH, Tanabe T, Cade NI, Ding D, Johnson SR, Gotoh H, Kuramochi E, Notomi M, Sogawa T.
    Opt Express; 2008 Apr 14; 16(8):5199-205. PubMed ID: 18542622
    [Abstract] [Full Text] [Related]

  • 6. Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 1.5 microm using cavity-confined slow light.
    Bordas F, Seassal C, Dupuy E, Regreny P, Gendry M, Viktorovitch P, Steel MJ, Rahmani A.
    Opt Express; 2009 Mar 30; 17(7):5439-45. PubMed ID: 19333310
    [Abstract] [Full Text] [Related]

  • 7. Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon.
    Yang J, Bhattacharya P.
    Opt Express; 2008 Mar 31; 16(7):5136-40. PubMed ID: 18542613
    [Abstract] [Full Text] [Related]

  • 8. Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers.
    Fedorova KA, Cataluna MA, Krestnikov I, Livshits D, Rafailov EU.
    Opt Express; 2010 Aug 30; 18(18):19438-43. PubMed ID: 20940839
    [Abstract] [Full Text] [Related]

  • 9. Room temperature continuous wave operation in a photonic crystal microcavity laser with a single layer of InAs/InP self-assembled quantum wires.
    Martínez LJ, Alén B, Prieto I, Fuster D, González L, González Y, Dotor ML, Postigo PA.
    Opt Express; 2009 Aug 17; 17(17):14993-5000. PubMed ID: 19687977
    [Abstract] [Full Text] [Related]

  • 10. Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics.
    Fegadolli WS, Kim SH, Postigo PA, Scherer A.
    Opt Lett; 2013 Nov 15; 38(22):4656-8. PubMed ID: 24322098
    [Abstract] [Full Text] [Related]

  • 11. Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser.
    Djie HS, Ooi BS, Fang XM, Wu Y, Fastenau JM, Liu WK, Hopkinson M.
    Opt Lett; 2007 Jan 01; 32(1):44-6. PubMed ID: 17167578
    [Abstract] [Full Text] [Related]

  • 12. Single rolled-up InGaAs/GaAs quantum dot microtubes integrated with silicon-on-insulator waveguides.
    Tian Z, Veerasubramanian V, Bianucci P, Mukherjee S, Mi Z, Kirk AG, Plant DV.
    Opt Express; 2011 Jun 20; 19(13):12164-71. PubMed ID: 21716453
    [Abstract] [Full Text] [Related]

  • 13. InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.
    Fu Y, Wang SM, Ferdos F, Sadeghi M, Larsson A.
    J Nanosci Nanotechnol; 2002 Jun 20; 2(3-4):421-6. PubMed ID: 12908273
    [Abstract] [Full Text] [Related]

  • 14. High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability.
    Cao Y, Ji H, Xu P, Gu Y, Ma W, Yang T.
    Opt Lett; 2012 Oct 01; 37(19):4071-3. PubMed ID: 23027282
    [Abstract] [Full Text] [Related]

  • 15. High-brightness single photon source from a quantum dot in a directional-emission nanocavity.
    Toishi M, Englund D, Faraon A, Vucković J.
    Opt Express; 2009 Aug 17; 17(17):14618-26. PubMed ID: 19687940
    [Abstract] [Full Text] [Related]

  • 16. 1.3 microm quantum dot laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation.
    Gerschütz F, Fischer M, Koeth J, Krestnikov I, Kovsh A, Schilling C, Kaiser W, Höfling S, Forchel A.
    Opt Express; 2008 Apr 14; 16(8):5596-601. PubMed ID: 18542663
    [Abstract] [Full Text] [Related]

  • 17. Nanolasers grown on silicon-based MOSFETs.
    Lu F, Tran TT, Ko WS, Ng KW, Chen R, Chang-Hasnain C.
    Opt Express; 2012 May 21; 20(11):12171-6. PubMed ID: 22714204
    [Abstract] [Full Text] [Related]

  • 18. GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating.
    Shindo T, Okumura T, Ito H, Koguchi T, Takahashi D, Atsumi Y, Kang J, Osabe R, Amemiya T, Nishiyama N, Arai S.
    Opt Express; 2011 Jan 31; 19(3):1884-91. PubMed ID: 21369003
    [Abstract] [Full Text] [Related]

  • 19. Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.
    Trevisi G, Seravalli L, Frigeri P, Franchi S.
    Nanotechnology; 2009 Oct 14; 20(41):415607. PubMed ID: 19762951
    [Abstract] [Full Text] [Related]

  • 20. Strong extinction of a far-field laser beam by a single quantum dot.
    Vamivakas AN, Atatüre M, Dreiser J, Yilmaz ST, Badolato A, Swan AK, Goldberg BB, Imamoglu A, Unlü MS.
    Nano Lett; 2007 Sep 14; 7(9):2892-6. PubMed ID: 17691853
    [Abstract] [Full Text] [Related]

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