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286 related items for PubMed ID: 19417341

  • 1. A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap.
    Zhang ZY, Jiang Q, Luxmoore IJ, Hogg RA.
    Nanotechnology; 2009 Feb 04; 20(5):055204. PubMed ID: 19417341
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  • 3. InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate.
    Jiang Q, Tang M, Chen S, Wu J, Seeds A, Liu H.
    Opt Express; 2014 Sep 22; 22(19):23242-8. PubMed ID: 25321793
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  • 5. Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.
    Trevisi G, Seravalli L, Frigeri P, Franchi S.
    Nanotechnology; 2009 Oct 14; 20(41):415607. PubMed ID: 19762951
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  • 7. Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.
    Tanabe K, Guimard D, Bordel D, Iwamoto S, Arakawa Y.
    Opt Express; 2010 May 10; 18(10):10604-8. PubMed ID: 20588912
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  • 10. Room temperature polariton light emitting diode with integrated tunnel junction.
    Brodbeck S, Jahn JP, Rahimi-Iman A, Fischer J, Amthor M, Reitzenstein S, Kamp M, Schneider C, Höfling S.
    Opt Express; 2013 Dec 16; 21(25):31098-104. PubMed ID: 24514684
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  • 11. GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.
    Tomioka K, Motohisa J, Hara S, Hiruma K, Fukui T.
    Nano Lett; 2010 May 12; 10(5):1639-44. PubMed ID: 20377199
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  • 18. Coherence function control of Quantum Dot Superluminescent Light Emitting Diodes by frequency selective optical feedback.
    Blazek M, Elsässer W, Hopkinson M, Resneau P, Krakowski M, Rossetti M, Bardella P, Gioannini M, Montrosset I.
    Opt Express; 2009 Aug 03; 17(16):13365-72. PubMed ID: 19654741
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  • 19. The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures.
    Seravalli L, Trevisi G, Frigeri P, Franchi S, Geddo M, Guizzetti G.
    Nanotechnology; 2009 Jul 08; 20(27):275703. PubMed ID: 19531853
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  • 20. Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy.
    Wu J, Shao D, Dorogan VG, Li AZ, Li S, DeCuir EA, Manasreh MO, Wang ZM, Mazur YI, Salamo GJ.
    Nano Lett; 2010 Apr 14; 10(4):1512-6. PubMed ID: 20356102
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