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Journal Abstract Search

383 related items for PubMed ID: 19417458

  • 1. The nature of catalyst particles and growth mechanisms of GaN nanowires grown by Ni-assisted metal-organic chemical vapor deposition.
    Weng X, Burke RA, Redwing JM.
    Nanotechnology; 2009 Feb 25; 20(8):085610. PubMed ID: 19417458
    [Abstract] [Full Text] [Related]

  • 2. Controlled surface diffusion in plasma-enhanced chemical vapor deposition of GaN nanowires.
    Hou WC, Hong FC.
    Nanotechnology; 2009 Feb 04; 20(5):055606. PubMed ID: 19417353
    [Abstract] [Full Text] [Related]

  • 3. Controlled growth of ternary alloy nanowires using metalorganic chemical vapor deposition.
    Lim SK, Tambe MJ, Brewster MM, Gradecak S.
    Nano Lett; 2008 May 04; 8(5):1386-92. PubMed ID: 18386937
    [Abstract] [Full Text] [Related]

  • 4. Photocatalysis using GaN nanowires.
    Jung HS, Hong YJ, Li Y, Cho J, Kim YJ, Yi GC.
    ACS Nano; 2008 Apr 04; 2(4):637-42. PubMed ID: 19206593
    [Abstract] [Full Text] [Related]

  • 5. Vapor-solid growth of one-dimensional layer-structured gallium sulfide nanostructures.
    Shen G, Chen D, Chen PC, Zhou C.
    ACS Nano; 2009 May 26; 3(5):1115-20. PubMed ID: 19354225
    [Abstract] [Full Text] [Related]

  • 6. A novel route to the synthesis of silica nanowires without a metal catalyst at room temperature by chemical vapor deposition.
    Park S, Heo J, Kim HJ.
    Nano Lett; 2011 Feb 09; 11(2):740-5. PubMed ID: 21218850
    [Abstract] [Full Text] [Related]

  • 7. Crystallography and elasticity of individual GaN nanotubes.
    Liu B, Bando Y, Wang M, Tang C, Mitome M, Golberg D.
    Nanotechnology; 2009 May 06; 20(18):185705. PubMed ID: 19420628
    [Abstract] [Full Text] [Related]

  • 8. Spatial distribution of defect luminescence in GaN nanowires.
    Li Q, Wang GT.
    Nano Lett; 2010 May 12; 10(5):1554-8. PubMed ID: 20392110
    [Abstract] [Full Text] [Related]

  • 9. Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires.
    Longo M, Fallica R, Wiemer C, Salicio O, Fanciulli M, Rotunno E, Lazzarini L.
    Nano Lett; 2012 Mar 14; 12(3):1509-15. PubMed ID: 22364321
    [Abstract] [Full Text] [Related]

  • 10. Controlled growth of ordered nanopore arrays in GaN.
    Wildeson IH, Ewoldt DA, Colby R, Stach EA, Sands TD.
    Nano Lett; 2011 Feb 09; 11(2):535-40. PubMed ID: 21171632
    [Abstract] [Full Text] [Related]

  • 11. Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer.
    Schumann T, Gotschke T, Limbach F, Stoica T, Calarco R.
    Nanotechnology; 2011 Mar 04; 22(9):095603. PubMed ID: 21270490
    [Abstract] [Full Text] [Related]

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  • 13. Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires.
    Zhang X, Lew KK, Nimmatoori P, Redwing JM, Dickey EC.
    Nano Lett; 2007 Oct 04; 7(10):3241-5. PubMed ID: 17894516
    [Abstract] [Full Text] [Related]

  • 14. P-doping mechanisms in catalyst-free gallium arsenide nanowires.
    Dufouleur J, Colombo C, Garma T, Ketterer B, Uccelli E, Nicotra M, Fontcuberta i Morral A.
    Nano Lett; 2010 May 12; 10(5):1734-40. PubMed ID: 20373777
    [Abstract] [Full Text] [Related]

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  • 16. Synthesis and characterization of beta-Ga2O3 nanorod array clumps by chemical vapor deposition.
    Shi F, Wei X.
    J Nanosci Nanotechnol; 2012 Nov 12; 12(11):8481-6. PubMed ID: 23421234
    [Abstract] [Full Text] [Related]

  • 17. Spreading of liquid AuSi on vapor-liquid-solid-grown Si nanowires.
    Madras P, Dailey E, Drucker J.
    Nano Lett; 2010 May 12; 10(5):1759-63. PubMed ID: 20387793
    [Abstract] [Full Text] [Related]

  • 18. The large-scale synthesis and growth mechanism of II-B metal nanosponges through a vacuum vapor deposition route.
    Wang Q, Chen G, Zhou N.
    Nanotechnology; 2009 Feb 25; 20(8):085602. PubMed ID: 19417450
    [Abstract] [Full Text] [Related]

  • 19. Anisotropic interface induced formation of Sb nanowires on GaSb(111)A substrates.
    Proessdorf A, Grosse F, Perumal K, Braun W, Riechert H.
    Nanotechnology; 2012 Jun 15; 23(23):235301. PubMed ID: 22595679
    [Abstract] [Full Text] [Related]

  • 20. A crystallographic investigation of GaN nanostructures by reciprocal space mapping in a grazing incidence geometry.
    Lee S, Sohn Y, Kim C, Lee DR, Lee HH.
    Nanotechnology; 2009 May 27; 20(21):215703. PubMed ID: 19423942
    [Abstract] [Full Text] [Related]

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