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PUBMED FOR HANDHELDS

Journal Abstract Search


271 related items for PubMed ID: 19436096

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  • 3. Impact of preferential indium nucleation on electrical conductivity of vapor-liquid-solid grown indium-tin oxide nanowires.
    Meng G, Yanagida T, Nagashima K, Yoshida H, Kanai M, Klamchuen A, Zhuge F, He Y, Rahong S, Fang X, Takeda S, Kawai T.
    J Am Chem Soc; 2013 May 08; 135(18):7033-8. PubMed ID: 23581597
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  • 5. Growth of silicon nanowires on H-terminated Si {111} surface templates studied by transmission electron microscopy.
    Ozaki N, Ohno Y, Kikkawa J, Takeda S.
    J Electron Microsc (Tokyo); 2005 May 08; 54 Suppl 1():i25-9. PubMed ID: 16157636
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  • 6. The temperature-controlled growth of In2O3 nanowires, nanotowers and ultra-long layered nanorods.
    Singh N, Zhang T, Lee PS.
    Nanotechnology; 2009 May 13; 20(19):195605. PubMed ID: 19420644
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  • 7. Silicon nanowire oxidation: the influence of sidewall structure and gold distribution.
    Sivakov VA, Scholz R, Syrowatka F, Falk F, Gösele U, Christiansen SH.
    Nanotechnology; 2009 Oct 07; 20(40):405607. PubMed ID: 19738306
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  • 9. Synthesis and characterization of silicon nanowires on mesophase carbon microbead substrates by chemical vapor deposition.
    Li WN, Ding YS, Yuan J, Gomez S, Suib SL, Galasso FS, Dicarlo JF.
    J Phys Chem B; 2005 Mar 03; 109(8):3291-7. PubMed ID: 16851355
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  • 13. Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires.
    Zardo I, Yu L, Conesa-Boj S, Estradé S, Alet PJ, Rössler J, Frimmer M, Roca I Cabarrocas P, Peiró F, Arbiol J, Morante JR, Fontcuberta I Morral A.
    Nanotechnology; 2009 Apr 15; 20(15):155602. PubMed ID: 19420550
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  • 14. Oxide mediated liquid-solid growth of high aspect ratio aligned gold silicide nanowires on Si(110) substrates.
    Bhatta UM, Rath A, Dash JK, Ghatak J, Yi-Feng L, Liu CP, Satyam PV.
    Nanotechnology; 2009 Nov 18; 20(46):465601. PubMed ID: 19843987
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  • 16. Formation of single tiers of bridging silicon nanowires for transistor applications using vapor-liquid-solid growth from short silicon-on-insulator sidewalls.
    Nayfeh OM, Antoniadis DA, Boles S, Ho C, Thompson CV.
    Small; 2009 Nov 18; 5(21):2440-4. PubMed ID: 19642093
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  • 17. Highly end-doped silicon nanowires for field-effect transistors on flexible substrates.
    Celle C, Carella A, Mariolle D, Chevalier N, Rouvière E, Simonato JP.
    Nanoscale; 2010 May 18; 2(5):677-80. PubMed ID: 20648308
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  • 20. Rapid thermal annealing effects on tin oxide nanowires prepared by vapor-liquid-solid technique.
    Kar A, Yang J, Dutta M, Stroscio MA, Kumari J, Meyyappan M.
    Nanotechnology; 2009 Feb 11; 20(6):065704. PubMed ID: 19417398
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