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339 related items for PubMed ID: 19531853

  • 1. The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures.
    Seravalli L, Trevisi G, Frigeri P, Franchi S, Geddo M, Guizzetti G.
    Nanotechnology; 2009 Jul 08; 20(27):275703. PubMed ID: 19531853
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  • 2. Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.
    Trevisi G, Seravalli L, Frigeri P, Franchi S.
    Nanotechnology; 2009 Oct 14; 20(41):415607. PubMed ID: 19762951
    [Abstract] [Full Text] [Related]

  • 3. Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains.
    Wang X, Wang ZM, Liang B, Salamo GJ, Shih CK.
    Nano Lett; 2006 Sep 14; 6(9):1847-51. PubMed ID: 16967989
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  • 7. Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.
    Tanabe K, Guimard D, Bordel D, Iwamoto S, Arakawa Y.
    Opt Express; 2010 May 10; 18(10):10604-8. PubMed ID: 20588912
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  • 8. Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy.
    Liang BL, Wang ZM, Wang XY, Lee JH, Mazur YI, Shih CK, Salamo GJ.
    ACS Nano; 2008 Nov 25; 2(11):2219-24. PubMed ID: 19206386
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  • 10. Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.
    Yu Y, Li MF, He JF, He YM, Wei YJ, He Y, Zha GW, Shang XJ, Wang J, Wang LJ, Wang GW, Ni HQ, Lu CY, Niu ZC.
    Nano Lett; 2013 Apr 10; 13(4):1399-404. PubMed ID: 23464836
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  • 12. In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires.
    Heiss M, Ketterer B, Uccelli E, Morante JR, Arbiol J, Fontcuberta i Morral A.
    Nanotechnology; 2011 May 13; 22(19):195601. PubMed ID: 21430322
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  • 13. Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.
    Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y.
    Small; 2006 Mar 13; 2(3):386-9. PubMed ID: 17193056
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  • 14. Theoretical study on controllability of quantum state energy in an InGaAs/GaAs quantum dot buried in InGaAs.
    Mukai K, Nakashima K.
    J Nanosci Nanotechnol; 2006 Dec 13; 6(12):3705-9. PubMed ID: 17256319
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  • 16. High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability.
    Cao Y, Ji H, Xu P, Gu Y, Ma W, Yang T.
    Opt Lett; 2012 Oct 01; 37(19):4071-3. PubMed ID: 23027282
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  • 17. Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.
    Lee A, Jiang Q, Tang M, Seeds A, Liu H.
    Opt Express; 2012 Sep 24; 20(20):22181-7. PubMed ID: 23037366
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  • 18. Nanocrystalline TiO2 solar cells sensitized with InAs quantum dots.
    Yu P, Zhu K, Norman AG, Ferrere S, Frank AJ, Nozik AJ.
    J Phys Chem B; 2006 Dec 21; 110(50):25451-4. PubMed ID: 17165992
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  • 19. Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.
    Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA.
    J Nanosci Nanotechnol; 2007 Aug 21; 7(8):2889-93. PubMed ID: 17685312
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  • 20. The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors.
    Jolley G, Fu L, Tan HH, Jagadish C.
    Nanoscale; 2010 Jul 21; 2(7):1128-33. PubMed ID: 20648338
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