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324 related items for PubMed ID: 19546499

  • 1. Growth of vertical InAs nanowires on heterostructured substrates.
    Roddaro S, Caroff P, Biasiol G, Rossi F, Bocchi C, Nilsson K, Fröberg L, Wagner JB, Samuelson L, Wernersson LE, Sorba L.
    Nanotechnology; 2009 Jul 15; 20(28):285303. PubMed ID: 19546499
    [Abstract] [Full Text] [Related]

  • 2. Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy.
    Zhou HL, Hoang TB, Dheeraj DL, van Helvoort AT, Liu L, Harmand JC, Fimland BO, Weman H.
    Nanotechnology; 2009 Oct 14; 20(41):415701. PubMed ID: 19755725
    [Abstract] [Full Text] [Related]

  • 3. Evolution of epitaxial InAs nanowires on GaAs 111B.
    Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C.
    Small; 2009 Mar 14; 5(3):366-9. PubMed ID: 19152357
    [No Abstract] [Full Text] [Related]

  • 4. InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning.
    Huang Y, Kim TW, Xiong S, Mawst LJ, Kuech TF, Nealey PF, Dai Y, Wang Z, Guo W, Forbes D, Hubbard SM, Nesnidal M.
    Nano Lett; 2013 Mar 14; 13(12):5979-84. PubMed ID: 24274630
    [Abstract] [Full Text] [Related]

  • 5. Simultaneous integration of different nanowires on single textured Si (100) substrates.
    Rieger T, Rosenbach D, Mussler G, Schäpers T, Grützmacher D, Lepsa MI.
    Nano Lett; 2015 Mar 11; 15(3):1979-86. PubMed ID: 25650521
    [Abstract] [Full Text] [Related]

  • 6. Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates.
    Ihn SG, Song JI, Kim TW, Leem DS, Lee T, Lee SG, Koh EK, Song K.
    Nano Lett; 2007 Jan 11; 7(1):39-44. PubMed ID: 17212437
    [Abstract] [Full Text] [Related]

  • 7. Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.
    Tanabe K, Guimard D, Bordel D, Iwamoto S, Arakawa Y.
    Opt Express; 2010 May 10; 18(10):10604-8. PubMed ID: 20588912
    [Abstract] [Full Text] [Related]

  • 8. High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy.
    Caroff P, Wagner JB, Dick KA, Nilsson HA, Jeppsson M, Deppert K, Samuelson L, Wallenberg LR, Wernersson LE.
    Small; 2008 Jul 10; 4(7):878-82. PubMed ID: 18576282
    [No Abstract] [Full Text] [Related]

  • 9. Coexistence of vapor-liquid-solid and vapor-solid-solid growth modes in Pd-assisted InAs nanowires.
    Heun S, Radha B, Ercolani D, Kulkarni GU, Rossi F, Grillo V, Salviati G, Beltram F, Sorba L.
    Small; 2010 Sep 06; 6(17):1935-41. PubMed ID: 20662001
    [Abstract] [Full Text] [Related]

  • 10. In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires.
    Heiss M, Ketterer B, Uccelli E, Morante JR, Arbiol J, Fontcuberta i Morral A.
    Nanotechnology; 2011 May 13; 22(19):195601. PubMed ID: 21430322
    [Abstract] [Full Text] [Related]

  • 11. Excess indium and substrate effects on the growth of InAs nanowires.
    Dayeh SA, Yu ET, Wang D.
    Small; 2007 Oct 13; 3(10):1683-7. PubMed ID: 17806087
    [No Abstract] [Full Text] [Related]

  • 12. Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.
    Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA.
    J Nanosci Nanotechnol; 2007 Aug 13; 7(8):2889-93. PubMed ID: 17685312
    [Abstract] [Full Text] [Related]

  • 13. Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
    Joyce HJ, Docherty CJ, Gao Q, Tan HH, Jagadish C, Lloyd-Hughes J, Herz LM, Johnston MB.
    Nanotechnology; 2013 May 31; 24(21):214006. PubMed ID: 23619012
    [Abstract] [Full Text] [Related]

  • 14. Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires.
    Fontcuberta i Morral A, Spirkoska D, Arbiol J, Heigoldt M, Ramon Morante J, Abstreiter G.
    Small; 2008 Jul 31; 4(7):899-903. PubMed ID: 18504720
    [No Abstract] [Full Text] [Related]

  • 15. Defect-free <110> zinc-blende structured InAs nanowires catalyzed by palladium.
    Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Tan HH, Jagadish C, Zou J.
    Nano Lett; 2012 Nov 14; 12(11):5744-9. PubMed ID: 23030768
    [Abstract] [Full Text] [Related]

  • 16. Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.
    Yu Y, Li MF, He JF, He YM, Wei YJ, He Y, Zha GW, Shang XJ, Wang J, Wang LJ, Wang GW, Ni HQ, Lu CY, Niu ZC.
    Nano Lett; 2013 Apr 10; 13(4):1399-404. PubMed ID: 23464836
    [Abstract] [Full Text] [Related]

  • 17. Au-free epitaxial growth of InAs nanowires.
    Mandl B, Stangl J, Mårtensson T, Mikkelsen A, Eriksson J, Karlsson LS, Bauer GU, Samuelson L, Seifert W.
    Nano Lett; 2006 Aug 10; 6(8):1817-21. PubMed ID: 16895379
    [Abstract] [Full Text] [Related]

  • 18. Understanding Self-Catalyzed Epitaxial Growth of III-V Nanowires toward Controlled Synthesis.
    Zi Y, Suslov S, Yang C.
    Nano Lett; 2017 Feb 08; 17(2):1167-1173. PubMed ID: 28103043
    [Abstract] [Full Text] [Related]

  • 19. From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires.
    Potts H, Friedl M, Amaduzzi F, Tang K, Tütüncüoglu G, Matteini F, Alarcon Lladó E, McIntyre PC, Fontcuberta i Morral A.
    Nano Lett; 2016 Jan 13; 16(1):637-43. PubMed ID: 26686394
    [Abstract] [Full Text] [Related]

  • 20. Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy.
    Landré O, Bougerol C, Renevier H, Daudin B.
    Nanotechnology; 2009 Oct 14; 20(41):415602. PubMed ID: 19755728
    [Abstract] [Full Text] [Related]

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