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Journal Abstract Search

183 related items for PubMed ID: 19597262

  • 1. Dislocations in Si nanocrystals embedded in SiO2.
    Wang YQ, Li T, Liang WS, Duan XF, Ross GG.
    Nanotechnology; 2009 Aug 05; 20(31):315704. PubMed ID: 19597262
    [Abstract] [Full Text] [Related]

  • 2. Depth profiling of charging effect of Si nanocrystals embedded in SiO2: a study of charge diffusion among Si nanocrystals.
    Liu Y, Chen TP, Ng CY, Ding L, Zhang S, Fu YQ, Fung S.
    J Phys Chem B; 2006 Aug 24; 110(33):16499-502. PubMed ID: 16913782
    [Abstract] [Full Text] [Related]

  • 3. [Effect of Ce3+ implantation on photoluminescence intensity of Si nanocrystals embedded in superlattices].
    Du YF, Yi LX, Wang SW, Wu Y.
    Guang Pu Xue Yu Guang Pu Fen Xi; 2009 Jun 24; 29(6):1486-8. PubMed ID: 19810514
    [Abstract] [Full Text] [Related]

  • 4. Influence of the implantation profiles of Si(+) on the dielectric function and optical transitions in silicon nanocrystals.
    En Naciri A, Mansour M, Johann L, Grob JJ, Rinnert H.
    J Chem Phys; 2008 Nov 14; 129(18):184701. PubMed ID: 19045417
    [Abstract] [Full Text] [Related]

  • 5. Characterization of Si nanocrystals by different TEM-based techniques.
    Nikolova L, Saint-Jacques RG, Ross GG.
    Ultramicroscopy; 2010 Jan 14; 110(2):144-50. PubMed ID: 19944535
    [Abstract] [Full Text] [Related]

  • 6. [Photoluminescence from Si and Er dual-implanted Si-rich thermal oxidation SiO2/Si thin films].
    Xiao ZS, Xu F, Zhang TH, Cheng GA, Gu LL.
    Guang Pu Xue Yu Guang Pu Fen Xi; 2002 Aug 14; 22(4):538-41. PubMed ID: 12938357
    [Abstract] [Full Text] [Related]

  • 7. [Electroluminescence from a Mn2+ activated SiO2 : Si film on N(+)-Si substrate].
    Wen J, Chen T, Ran GZ.
    Guang Pu Xue Yu Guang Pu Fen Xi; 2009 Jul 14; 29(7):1736-9. PubMed ID: 19798929
    [Abstract] [Full Text] [Related]

  • 8. The structural and optical properties of SiO2/Si rich SiNx multilayers containing Si-ncs.
    Delachat F, Carrada M, Ferblantier G, Grob JJ, Slaoui A, Rinnert H.
    Nanotechnology; 2009 Jul 08; 20(27):275608. PubMed ID: 19531864
    [Abstract] [Full Text] [Related]

  • 9. An efficient Si light-emitting diode based on an n- ZnO/SiO2-Si nanocrystals-SiO2/p-Si heterostructure.
    Sun E, Su FH, Shih YT, Tsai HL, Chen CH, Wu MK, Yang JR, Chen MJ.
    Nanotechnology; 2009 Nov 04; 20(44):445202. PubMed ID: 19801782
    [Abstract] [Full Text] [Related]

  • 10. [Microstructure of erbium-doped Si-rich thermal oxidation SiO2/Si luminescent thin films].
    Xu F, Xiao ZS, Cheng GA, Yi ZZ, Zeng YX, Zhang TH, Gu LL.
    Guang Pu Xue Yu Guang Pu Fen Xi; 2001 Dec 04; 21(6):758-62. PubMed ID: 12958887
    [Abstract] [Full Text] [Related]

  • 11. Dielectric function of ZnTe nanocrystals by spectroscopic ellipsometry.
    Ahmed F, En Naciri A, Grob JJ, Stchakovsky M, Johann L.
    Nanotechnology; 2009 Jul 29; 20(30):305702. PubMed ID: 19584414
    [Abstract] [Full Text] [Related]

  • 12. Formation process of beta-FeSi from amorphous Fe-Si synthesized by ion implantation: Fe concentration dependence.
    Naito M, Ishimaru M.
    J Microsc; 2009 Nov 29; 236(2):123-7. PubMed ID: 19903237
    [Abstract] [Full Text] [Related]

  • 13. Investigation of Photoluminescence Mechanisms from SiO2/Si:SiO2/SiO2 Structures in Weak Quantum Confined Regime by Deconvolution of Photoluminescence Spectra.
    Tuğay E, Turan R.
    J Nanosci Nanotechnol; 2016 Apr 29; 16(4):4052-64. PubMed ID: 27451765
    [Abstract] [Full Text] [Related]

  • 14. Well-orientated cubic boron nitride nanocrystals as studied by high-resolution transmission electron microscopy.
    Tsiaoussis I, Frangis N.
    J Microsc; 2006 Sep 29; 223(Pt 3):205-7. PubMed ID: 17059530
    [Abstract] [Full Text] [Related]

  • 15. [Effect of hydrogen passivation on photoluminescence intensity of Si nanocrystals].
    Chen EG, Yi LX, Wang SW, Liu RP, Su MC, Tang Y, Wang YS.
    Guang Pu Xue Yu Guang Pu Fen Xi; 2008 Feb 29; 28(2):246-8. PubMed ID: 18478995
    [Abstract] [Full Text] [Related]

  • 16. MeV Au irradiation induced nanoparticle formation and recrystallization in a low energy Au implanted Si layer.
    Sahu G, Joseph B, Lenka HP, Kuiri PK, Pradhan A, Mahapatra DP.
    Nanotechnology; 2007 Dec 12; 18(49):495702. PubMed ID: 20442483
    [Abstract] [Full Text] [Related]

  • 17. Evolution of photoluminescence mechanisms of Si(+)-implanted SiO2 films with thermal annealing.
    Ding L, Chen TP, Liu Y, Ng CY, Yang M, Wong JI, Zhu FR, Tan MC, Fung S, Chen XD, Huang Y.
    J Nanosci Nanotechnol; 2008 Jul 12; 8(7):3555-60. PubMed ID: 19051910
    [Abstract] [Full Text] [Related]

  • 18. Evaluation of the radiative recombination mechanism in Si nanocrystals embedded in Silica matrix.
    Righini M, Gnolil A, Razzari L, Serincan U, Turan R.
    J Nanosci Nanotechnol; 2008 Feb 12; 8(2):823-7. PubMed ID: 18464413
    [Abstract] [Full Text] [Related]

  • 19. Controlled fabrication of Si nanocrystals embedded in thin SiON layers by PPECVD followed by oxidizing annealing.
    Perret-Tran-Van S, Makasheva K, Despax B, Bonafos C, Coulon PE, Paillard V.
    Nanotechnology; 2010 Jul 16; 21(28):285605. PubMed ID: 20585166
    [Abstract] [Full Text] [Related]

  • 20. Electroluminescence microspectroscopy of silicon nanocrystals obtained by Si(+) ion implantation in SiO(2).
    Lacombe A, Kadari B, Beaudoin F, Barba D, Martin F, Ross GG.
    Nanotechnology; 2008 Nov 19; 19(46):465702. PubMed ID: 21836257
    [Abstract] [Full Text] [Related]

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