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Journal Abstract Search

179 related items for PubMed ID: 19736975

  • 21. Growth of silver nanowires on GaAs wafers.
    Sun Y.
    Nanoscale; 2011 May; 3(5):2247-55. PubMed ID: 21483977
    [Abstract] [Full Text] [Related]

  • 22. Manganese-induced growth of GaAs nanowires.
    Martelli F, Rubini S, Piccin M, Bais G, Jabeen F, De Franceschi S, Grillo V, Carlino E, D'Acapito F, Boscherini F, Cabrini S, Lazzarino M, Businaro L, Romanato F, Franciosi A.
    Nano Lett; 2006 Sep; 6(9):2130-4. PubMed ID: 16968038
    [Abstract] [Full Text] [Related]

  • 23. Stacking-faults-free zinc Blende GaAs nanowires.
    Shtrikman H, Popovitz-Biro R, Kretinin A, Heiblum M.
    Nano Lett; 2009 Jan; 9(1):215-9. PubMed ID: 19093840
    [Abstract] [Full Text] [Related]

  • 24. P-doping mechanisms in catalyst-free gallium arsenide nanowires.
    Dufouleur J, Colombo C, Garma T, Ketterer B, Uccelli E, Nicotra M, Fontcuberta i Morral A.
    Nano Lett; 2010 May 12; 10(5):1734-40. PubMed ID: 20373777
    [Abstract] [Full Text] [Related]

  • 25. High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures.
    Funk S, Royo M, Zardo I, Rudolph D, Morkötter S, Mayer B, Becker J, Bechtold A, Matich S, Döblinger M, Bichler M, Koblmüller G, Finley JJ, Bertoni A, Goldoni G, Abstreiter G.
    Nano Lett; 2013 May 12; 13(12):6189-96. PubMed ID: 24274328
    [Abstract] [Full Text] [Related]

  • 26. GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)as at MnAs segregation conditions.
    Sadowski J, Dłuzewski P, Kret S, Janik E, Lusakowska E, Kanski J, Presz A, Terki F, Charar S, Tang D.
    Nano Lett; 2007 Sep 12; 7(9):2724-8. PubMed ID: 17718585
    [Abstract] [Full Text] [Related]

  • 27. Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires.
    Parkinson P, Dodson C, Joyce HJ, Bertness KA, Sanford NA, Herz LM, Johnston MB.
    Nano Lett; 2012 Sep 12; 12(9):4600-4. PubMed ID: 22924866
    [Abstract] [Full Text] [Related]

  • 28. Multiple quantum well AlGaAs nanowires.
    Chen C, Braidy N, Couteau C, Fradin C, Weihs G, LaPierre R.
    Nano Lett; 2008 Feb 12; 8(2):495-9. PubMed ID: 18184023
    [Abstract] [Full Text] [Related]

  • 29. Spontaneous alloy composition ordering in GaAs-AlGaAs core-shell nanowires.
    Rudolph D, Funk S, Döblinger M, Morkötter S, Hertenberger S, Schweickert L, Becker J, Matich S, Bichler M, Spirkoska D, Zardo I, Finley JJ, Abstreiter G, Koblmüller G.
    Nano Lett; 2013 Apr 10; 13(4):1522-7. PubMed ID: 23517063
    [Abstract] [Full Text] [Related]

  • 30. Heterojunction photovoltaics using GaAs nanowires and conjugated polymers.
    Ren S, Zhao N, Crawford SC, Tambe M, Bulović V, Gradecak S.
    Nano Lett; 2011 Feb 09; 11(2):408-13. PubMed ID: 21171629
    [Abstract] [Full Text] [Related]

  • 31. Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.
    Joyce HJ, Parkinson P, Jiang N, Docherty CJ, Gao Q, Tan HH, Jagadish C, Herz LM, Johnston MB.
    Nano Lett; 2014 Oct 08; 14(10):5989-94. PubMed ID: 25232659
    [Abstract] [Full Text] [Related]

  • 32. In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires.
    Heiss M, Ketterer B, Uccelli E, Morante JR, Arbiol J, Fontcuberta i Morral A.
    Nanotechnology; 2011 May 13; 22(19):195601. PubMed ID: 21430322
    [Abstract] [Full Text] [Related]

  • 33. Direct measurement of band edge discontinuity in individual core-shell nanowires by photocurrent spectroscopy.
    Chen G, Sun G, Ding YJ, Prete P, Miccoli I, Lovergine N, Shtrikman H, Kung P, Livneh T, Spanier JE.
    Nano Lett; 2013 Sep 11; 13(9):4152-7. PubMed ID: 23937245
    [Abstract] [Full Text] [Related]

  • 34. Investigation on localized states in GaN nanowires.
    Polenta L, Rossi M, Cavallini A, Calarco R, Marso M, Meijers R, Richter T, Stoica T, Lüth H.
    ACS Nano; 2008 Feb 11; 2(2):287-92. PubMed ID: 19206629
    [Abstract] [Full Text] [Related]

  • 35. GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy.
    Ouattara L, Mikkelsen A, Sköld N, Eriksson J, Knaapen T, Cavar E, Seifert W, Samuelson L, Lundgren E.
    Nano Lett; 2007 Sep 11; 7(9):2859-64. PubMed ID: 17722945
    [Abstract] [Full Text] [Related]

  • 36. Single GaAs/GaAsP coaxial core-shell nanowire lasers.
    Hua B, Motohisa J, Kobayashi Y, Hara S, Fukui T.
    Nano Lett; 2009 Jan 11; 9(1):112-6. PubMed ID: 19072060
    [Abstract] [Full Text] [Related]

  • 37. Growth mechanism of truncated triangular III-V nanowires.
    Zou J, Paladugu M, Wang H, Auchterlonie GJ, Guo YN, Kim Y, Gao Q, Joyce HJ, Tan HH, Jagadish C.
    Small; 2007 Mar 11; 3(3):389-93. PubMed ID: 17285644
    [No Abstract] [Full Text] [Related]

  • 38. Simultaneous integration of different nanowires on single textured Si (100) substrates.
    Rieger T, Rosenbach D, Mussler G, Schäpers T, Grützmacher D, Lepsa MI.
    Nano Lett; 2015 Mar 11; 15(3):1979-86. PubMed ID: 25650521
    [Abstract] [Full Text] [Related]

  • 39. Hopping conduction in Mn ion-implanted GaAs nanowires.
    Paschoal W, Kumar S, Borschel C, Wu P, Canali CM, Ronning C, Samuelson L, Pettersson H.
    Nano Lett; 2012 Sep 12; 12(9):4838-42. PubMed ID: 22889471
    [Abstract] [Full Text] [Related]

  • 40. Damage-free top-down processes for fabricating two-dimensional arrays of 7 nm GaAs nanodiscs using bio-templates and neutral beam etching.
    Wang XY, Huang CH, Tsukamoto R, Mortemousque PA, Itoh KM, Ohno Y, Samukawa S.
    Nanotechnology; 2011 Sep 07; 22(36):365301. PubMed ID: 21836326
    [Abstract] [Full Text] [Related]

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