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Journal Abstract Search

332 related items for PubMed ID: 19755728

  • 1. Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy.
    Landré O, Bougerol C, Renevier H, Daudin B.
    Nanotechnology; 2009 Oct 14; 20(41):415602. PubMed ID: 19755728
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  • 2. Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy.
    Calarco R, Meijers RJ, Debnath RK, Stoica T, Sutter E, Lüth H.
    Nano Lett; 2007 Aug 14; 7(8):2248-51. PubMed ID: 17602537
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  • 3. Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.
    Wölz M, Hauswald C, Flissikowski T, Gotschke T, Fernández-Garrido S, Brandt O, Grahn HT, Geelhaar L, Riechert H.
    Nano Lett; 2015 Jun 10; 15(6):3743-7. PubMed ID: 26001039
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  • 4. Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy.
    Zhou HL, Hoang TB, Dheeraj DL, van Helvoort AT, Liu L, Harmand JC, Fimland BO, Weman H.
    Nanotechnology; 2009 Oct 14; 20(41):415701. PubMed ID: 19755725
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  • 9. Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers.
    Olszewski K, Sobanska M, Dubrovskii VG, Leshchenko ED, Wierzbicka A, Zytkiewicz ZR.
    Nanomaterials (Basel); 2023 Sep 19; 13(18):. PubMed ID: 37764616
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  • 10. Quantum Dot-Like Behavior of Compositional Fluctuations in AlGaN Nanowires.
    Belloeil M, Gayral B, Daudin B.
    Nano Lett; 2016 Feb 10; 16(2):960-6. PubMed ID: 26785291
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  • 13. The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates.
    Wu Y, Liu B, Li Z, Tao T, Xie Z, Wang K, Xiu X, Chen D, Lu H, Zhang R, Zheng Y.
    Nanotechnology; 2020 Jan 17; 31(4):045604. PubMed ID: 31578003
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  • 15. Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiO(x) by catalyst-free molecular beam epitaxy.
    Zhao S, Kibria MG, Wang Q, Nguyen HP, Mi Z.
    Nanoscale; 2013 Jun 21; 5(12):5283-7. PubMed ID: 23661186
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  • 16. Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si.
    Bolshakov AD, Fedorov VV, Shugurov KY, Mozharov AM, Sapunov GA, Shtrom IV, Mukhin MS, Uvarov AV, Cirlin GE, Mukhin IS.
    Nanotechnology; 2019 Sep 27; 30(39):395602. PubMed ID: 31234150
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  • 17. The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene.
    Liudi Mulyo A, Rajpalke MK, Vullum PE, Weman H, Kishino K, Fimland BO.
    Sci Rep; 2020 Jan 21; 10(1):853. PubMed ID: 31964934
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  • 18. Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires.
    Fontcuberta i Morral A, Spirkoska D, Arbiol J, Heigoldt M, Ramon Morante J, Abstreiter G.
    Small; 2008 Jul 21; 4(7):899-903. PubMed ID: 18504720
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  • 19. Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy.
    Galopin E, Largeau L, Patriarche G, Travers L, Glas F, Harmand JC.
    Nanotechnology; 2011 Jun 17; 22(24):245606. PubMed ID: 21508494
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  • 20. Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.
    Borysiuk J, Zytkiewicz ZR, Sobanska M, Wierzbicka A, Klosek K, Korona KP, Perkowska PS, Reszka A.
    Nanotechnology; 2014 Apr 04; 25(13):135610. PubMed ID: 24598248
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