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Journal Abstract Search

268 related items for PubMed ID: 19883119

  • 1. Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.
    Farmer DB, Chiu HY, Lin YM, Jenkins KA, Xia F, Avouris P.
    Nano Lett; 2009 Dec; 9(12):4474-8. PubMed ID: 19883119
    [Abstract] [Full Text] [Related]

  • 2. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.
    Smith C, Qaisi R, Liu Z, Yu Q, Hussain MM.
    ACS Nano; 2013 Jul 23; 7(7):5818-23. PubMed ID: 23777434
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  • 3. Charge noise in graphene transistors.
    Heller I, Chatoor S, Männik J, Zevenbergen MA, Oostinga JB, Morpurgo AF, Dekker C, Lemay SG.
    Nano Lett; 2010 May 12; 10(5):1563-7. PubMed ID: 20373788
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  • 4. Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.
    Wu Y, Zou J, Huo S, Lu H, Kong Y, Chen T, Wu W, Xu J.
    J Nanosci Nanotechnol; 2015 Aug 12; 15(8):5706-10. PubMed ID: 26369142
    [Abstract] [Full Text] [Related]

  • 5. High-performance top-gated graphene-nanoribbon transistors using zirconium oxide nanowires as high-dielectric-constant gate dielectrics.
    Liao L, Bai J, Lin YC, Qu Y, Huang Y, Duan X.
    Adv Mater; 2010 May 04; 22(17):1941-5. PubMed ID: 20526997
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  • 8. Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.
    Liao L, Bai J, Cheng R, Lin YC, Jiang S, Huang Y, Duan X.
    Nano Lett; 2010 May 12; 10(5):1917-21. PubMed ID: 20380441
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  • 9. Operation of graphene transistors at gigahertz frequencies.
    Lin YM, Jenkins KA, Valdes-Garcia A, Small JP, Farmer DB, Avouris P.
    Nano Lett; 2009 Jan 12; 9(1):422-6. PubMed ID: 19099364
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  • 11. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
    Yoon A, Hong WK, Lee T.
    J Nanosci Nanotechnol; 2007 Nov 12; 7(11):4101-5. PubMed ID: 18047128
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  • 12. Stretchable graphene transistors with printed dielectrics and gate electrodes.
    Lee SK, Kim BJ, Jang H, Yoon SC, Lee C, Hong BH, Rogers JA, Cho JH, Ahn JH.
    Nano Lett; 2011 Nov 09; 11(11):4642-6. PubMed ID: 21973013
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  • 15. Gate coupling and charge distribution in nanowire field effect transistors.
    Khanal DR, Wu J.
    Nano Lett; 2007 Sep 09; 7(9):2778-83. PubMed ID: 17718588
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