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Journal Abstract Search

268 related items for PubMed ID: 19883119

  • 21. Electrical transport model of Silicene as a channel of field effect transistor.
    Sadeghi H.
    J Nanosci Nanotechnol; 2014 Jun; 14(6):4178-84. PubMed ID: 24738367
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  • 24. Determination of the Thermal Noise Limit of Graphene Biotransistors.
    Crosser MS, Brown MA, McEuen PL, Minot ED.
    Nano Lett; 2015 Aug 12; 15(8):5404-7. PubMed ID: 26176844
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  • 25. Top-gated chemical vapor deposition grown graphene transistors with current saturation.
    Bai J, Liao L, Zhou H, Cheng R, Liu L, Huang Y, Duan X.
    Nano Lett; 2011 Jun 08; 11(6):2555-9. PubMed ID: 21548551
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  • 26. Quantum behavior of graphene transistors near the scaling limit.
    Wu Y, Perebeinos V, Lin YM, Low T, Xia F, Avouris P.
    Nano Lett; 2012 Mar 14; 12(3):1417-23. PubMed ID: 22316333
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  • 30. Wide-band frequency-tunable terahertz and infrared detection with graphene.
    Kawano Y.
    Nanotechnology; 2013 May 31; 24(21):214004. PubMed ID: 23618878
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  • 32. Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics.
    Marconcini P, Cresti A, Triozon F, Fiori G, Biel B, Niquet YM, Macucci M, Roche S.
    ACS Nano; 2012 Sep 25; 6(9):7942-7. PubMed ID: 22876866
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  • 33. Fabrication and characterization of fully flattened carbon nanotubes: a new graphene nanoribbon analogue.
    Choi DH, Wang Q, Azuma Y, Majima Y, Warner JH, Miyata Y, Shinohara H, Kitaura R.
    Sci Rep; 2013 Sep 25; 3():1617. PubMed ID: 23563618
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  • 34. State-of-the-art graphene high-frequency electronics.
    Wu Y, Jenkins KA, Valdes-Garcia A, Farmer DB, Zhu Y, Bol AA, Dimitrakopoulos C, Zhu W, Xia F, Avouris P, Lin YM.
    Nano Lett; 2012 Jun 13; 12(6):3062-7. PubMed ID: 22563820
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  • 35. High electron mobility InAs nanowire field-effect transistors.
    Dayeh SA, Aplin DP, Zhou X, Yu PK, Yu ET, Wang D.
    Small; 2007 Feb 13; 3(2):326-32. PubMed ID: 17199246
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  • 36. Rapid Fabrication of Graphene Field-Effect Transistors with Liquid-metal Interconnects and Electrolytic Gate Dielectric Made of Honey.
    Ordonez RC, Hayashi CK, Torres CM, Melcher JL, Kamin N, Severa G, Garmire D.
    Sci Rep; 2017 Aug 31; 7(1):10171. PubMed ID: 28860498
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  • 37. Large-scale graphene transistors with enhanced performance and reliability based on interface engineering by phenylsilane self-assembled monolayers.
    Liu Z, Bol AA, Haensch W.
    Nano Lett; 2011 Feb 09; 11(2):523-8. PubMed ID: 21171630
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  • 38. Single-layer MoS2 transistors.
    Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A.
    Nat Nanotechnol; 2011 Mar 09; 6(3):147-50. PubMed ID: 21278752
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  • 39. High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers.
    Matsuda Y, Nakahara Y, Michiura D, Uno K, Tanaka I.
    J Nanosci Nanotechnol; 2016 Apr 09; 16(4):3273-6. PubMed ID: 27451616
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  • 40. Short-channel transistors constructed with solution-processed carbon nanotubes.
    Choi SJ, Bennett P, Takei K, Wang C, Lo CC, Javey A, Bokor J.
    ACS Nano; 2013 Jan 22; 7(1):798-803. PubMed ID: 23259742
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