These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

171 related items for PubMed ID: 19903235

  • 1. TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates.
    Dłuzewski P, Sadowski J, Kret S, Dabrowski J, Sobczak K.
    J Microsc; 2009 Nov; 236(2):115-8. PubMed ID: 19903235
    [Abstract] [Full Text] [Related]

  • 2. Gold-free growth of GaAs nanowires on silicon: arrays and polytypism.
    Plissard S, Dick KA, Larrieu G, Godey S, Addad A, Wallart X, Caroff P.
    Nanotechnology; 2010 Sep 24; 21(38):385602. PubMed ID: 20798467
    [Abstract] [Full Text] [Related]

  • 3. Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates.
    Gas K, Sadowski J, Kasama T, Siusys A, Zaleszczyk W, Wojciechowski T, Morhange JF, Altintaş A, Xu HQ, Szuszkiewicz W.
    Nanoscale; 2013 Aug 21; 5(16):7410-8. PubMed ID: 23832244
    [Abstract] [Full Text] [Related]

  • 4. Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy.
    Wang CY, Hong YC, Ko ZJ, Su YW, Huang JH.
    Nanoscale Res Lett; 2017 Dec 21; 12(1):290. PubMed ID: 28438011
    [Abstract] [Full Text] [Related]

  • 5.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 6. Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates.
    Sun MH, Leong ES, Chin AH, Ning CZ, Cirlin GE, Samsonenko YB, Dubrovskii VG, Chuang L, Chang-Hasnain C.
    Nanotechnology; 2010 Aug 20; 21(33):335705. PubMed ID: 20657047
    [Abstract] [Full Text] [Related]

  • 7. Surface effects on the atomic and electronic structure of unpassivated GaAs nanowires.
    Rosini M, Magri R.
    ACS Nano; 2010 Oct 26; 4(10):6021-31. PubMed ID: 20853868
    [Abstract] [Full Text] [Related]

  • 8.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 9.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 10.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 11. Orientation specific synthesis of kinked silicon nanowires grown by the vapour-liquid-solid mechanism.
    Hyun YJ, Lugstein A, Steinmair M, Bertagnolli E, Pongratz P.
    Nanotechnology; 2009 Mar 25; 20(12):125606. PubMed ID: 19420475
    [Abstract] [Full Text] [Related]

  • 12.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 13. Direct integration of III-V compound semiconductor nanostructures on silicon by selective epitaxy.
    Zhao Z, Yadavalli K, Hao Z, Wang KL.
    Nanotechnology; 2009 Jan 21; 20(3):035304. PubMed ID: 19417293
    [Abstract] [Full Text] [Related]

  • 14. Stages in molecular beam epitaxy growth of GaAs nanowires studied by x-ray diffraction.
    Mariager SO, Lauridsen SL, Sørensen CB, Dohn A, Willmott PR, Nygård J, Feidenhans'l R.
    Nanotechnology; 2010 Mar 19; 21(11):115603. PubMed ID: 20173223
    [Abstract] [Full Text] [Related]

  • 15. Guiding vapor-liquid-solid nanowire growth using SiO2.
    Quitoriano NJ, Wu W, Kamins TI.
    Nanotechnology; 2009 Apr 08; 20(14):145303. PubMed ID: 19420522
    [Abstract] [Full Text] [Related]

  • 16. Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy.
    Jabeen F, Grillo V, Rubini S, Martelli F.
    Nanotechnology; 2008 Jul 09; 19(27):275711. PubMed ID: 21828723
    [Abstract] [Full Text] [Related]

  • 17. Parallel-aligned GaAs nanowires with 110 orientation laterally grown on [311]B substrates via the gold-catalyzed vapor-liquid-solid mode.
    Zhang G, Tateno K, Gotoh H, Nakano H.
    Nanotechnology; 2010 Mar 05; 21(9):095607. PubMed ID: 20139489
    [Abstract] [Full Text] [Related]

  • 18. Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.
    Tchernycheva M, Harmand JC, Patriarche G, Travers L, Cirlin GE.
    Nanotechnology; 2006 Aug 28; 17(16):4025-30. PubMed ID: 21727532
    [Abstract] [Full Text] [Related]

  • 19. Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy.
    Bauer B, Rudolph A, Soda M, Fontcuberta i Morral A, Zweck J, Schuh D, Reiger E.
    Nanotechnology; 2010 Oct 29; 21(43):435601. PubMed ID: 20876983
    [Abstract] [Full Text] [Related]

  • 20. Synthesis and characterization of indium-doped ZnO nanowires with periodical single-twin structures.
    Xu L, Su Y, Chen Y, Xiao H, Zhu LA, Zhou Q, Li S.
    J Phys Chem B; 2006 Apr 06; 110(13):6637-42. PubMed ID: 16570966
    [Abstract] [Full Text] [Related]

    Page: [Next] [New Search]
    of 9.