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Journal Abstract Search

190 related items for PubMed ID: 20000817

  • 1. Growth of stacking-faults-free zinc blende GaAs nanowires on Si substrate by using AlGaAs/GaAs buffer layers.
    Huang H, Ren X, Ye X, Guo J, Wang Q, Yang Y, Cai S, Huang Y.
    Nano Lett; 2010 Jan; 10(1):64-8. PubMed ID: 20000817
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  • 2. Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition.
    Bao XY, Soci C, Susac D, Bratvold J, Aplin DP, Wei W, Chen CY, Dayeh SA, Kavanagh KL, Wang D.
    Nano Lett; 2008 Nov; 8(11):3755-60. PubMed ID: 18954121
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  • 3. Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates.
    Kang JH, Gao Q, Parkinson P, Joyce HJ, Tan HH, Kim Y, Guo Y, Xu H, Zou J, Jagadish C.
    Nanotechnology; 2012 Oct 19; 23(41):415702. PubMed ID: 23018759
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  • 4. Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy.
    Wang CY, Hong YC, Ko ZJ, Su YW, Huang JH.
    Nanoscale Res Lett; 2017 Dec 19; 12(1):290. PubMed ID: 28438011
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  • 5. High quality GaAs nanowires grown on glass substrates.
    Dhaka V, Haggren T, Jussila H, Jiang H, Kauppinen E, Huhtio T, Sopanen M, Lipsanen H.
    Nano Lett; 2012 Apr 11; 12(4):1912-8. PubMed ID: 22432446
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  • 8. Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?
    Hijazi H, Monier G, Gil E, Trassoudaine A, Bougerol C, Leroux C, Castellucci D, Robert-Goumet C, Hoggan PE, André Y, Isik Goktas N, LaPierre RR, Dubrovskii VG.
    Nano Lett; 2019 Jul 10; 19(7):4498-4504. PubMed ID: 31203632
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  • 9. A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy.
    García Núñez C, Braña AF, López N, García BJ.
    Nano Lett; 2018 Jun 13; 18(6):3608-3615. PubMed ID: 29739187
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  • 11. MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation.
    Wu D, Tang X, Yoon HS, Wang K, Olivier A, Li X.
    Nanoscale Res Lett; 2015 Dec 13; 10(1):410. PubMed ID: 26487507
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  • 12. Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate.
    Tomioka K, Kobayashi Y, Motohisa J, Hara S, Fukui T.
    Nanotechnology; 2009 Apr 08; 20(14):145302. PubMed ID: 19420521
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  • 15. Selective Growth of Stacking Fault Free ⟨100⟩ Nanowires on a Polycrystalline Substrate for Energy Conversion Application.
    Zhang K, Abbas Y, Jan SU, Gao L, Ma Y, Mi Z, Liu X, Xuan Y, Gong JR.
    ACS Appl Mater Interfaces; 2020 Apr 15; 12(15):17676-17685. PubMed ID: 32212680
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  • 19. Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires.
    Yu X, Wang H, Lu J, Zhao J, Misuraca J, Xiong P, von Molnár S.
    Nano Lett; 2012 Oct 10; 12(10):5436-42. PubMed ID: 22984828
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