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PUBMED FOR HANDHELDS

Journal Abstract Search


252 related items for PubMed ID: 20038180

  • 1.
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  • 2. Effect of Pt particle size and distribution on photoelectrochemical hydrogen evolution by p-Si photocathodes.
    Lombardi I, Marchionna S, Zangari G, Pizzini S.
    Langmuir; 2007 Nov 20; 23(24):12413-20. PubMed ID: 17941653
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  • 6. Oxide mediated liquid-solid growth of high aspect ratio aligned gold silicide nanowires on Si(110) substrates.
    Bhatta UM, Rath A, Dash JK, Ghatak J, Yi-Feng L, Liu CP, Satyam PV.
    Nanotechnology; 2009 Nov 18; 20(46):465601. PubMed ID: 19843987
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  • 7. Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate.
    Łaszcz A, Katcki J, Ratajczak J, Tang X, Dubois E.
    J Microsc; 2006 Oct 18; 224(Pt 1):38-41. PubMed ID: 17100902
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  • 8. Etching behavior of silicon nanowires with HF and NH4F and surface characterization by attenuated total reflection Fourier transform infrared spectroscopy: similarities and differences between one-dimensional and two-dimensional silicon surfaces.
    Chen WW, Sun XH, Wang SD, Lee ST, Teo BK.
    J Phys Chem B; 2005 Jun 02; 109(21):10871-9. PubMed ID: 16852323
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  • 10. Growth mechanism and diameter control of well-aligned small-diameter ZnO nanowire arrays synthesized by a catalyst-free thermal evaporation method.
    Li S, Zhang X, Yan B, Yu T.
    Nanotechnology; 2009 Dec 09; 20(49):495604. PubMed ID: 19893154
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  • 12. Formation of single tiers of bridging silicon nanowires for transistor applications using vapor-liquid-solid growth from short silicon-on-insulator sidewalls.
    Nayfeh OM, Antoniadis DA, Boles S, Ho C, Thompson CV.
    Small; 2009 Nov 09; 5(21):2440-4. PubMed ID: 19642093
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  • 13. Suppression of the vapor-liquid-solid growth of silicon nanowires by antimony addition.
    Nimmatoori P, Zhang Q, Dickey EC, Redwing JM.
    Nanotechnology; 2009 Jan 14; 20(2):025607. PubMed ID: 19417276
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  • 14. Guiding vapor-liquid-solid nanowire growth using SiO2.
    Quitoriano NJ, Wu W, Kamins TI.
    Nanotechnology; 2009 Apr 08; 20(14):145303. PubMed ID: 19420522
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  • 15. Growth kinetics and morphology of self-assembled monolayers formed by contact printing 7-octenyltrichlorosilane and octadecyltrichlorosilane on Si(100) wafers.
    Harada Y, Girolami GS, Nuzzo RG.
    Langmuir; 2004 Dec 07; 20(25):10878-88. PubMed ID: 15568837
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  • 17. ALD resist formed by vapor-deposited self-assembled monolayers.
    Hong J, Porter DW, Sreenivasan R, McIntyre PC, Bent SF.
    Langmuir; 2007 Jan 30; 23(3):1160-5. PubMed ID: 17241027
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  • 18. Multilayer nanostructured porphyrin arrays constructed by layer-by-layer self-assembly.
    Smith AR, Ruggles JL, Yu A, Gentle IR.
    Langmuir; 2009 Sep 01; 25(17):9873-8. PubMed ID: 19572527
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  • 19. Selective growth of Si nanowire arrays via galvanic displacement processes in water-in-oil microemulsions.
    Gao D, He R, Carraro C, Howe RT, Yang P, Maboudian R.
    J Am Chem Soc; 2005 Apr 06; 127(13):4574-5. PubMed ID: 15796513
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  • 20. The influence of the surface migration of gold on the growth of silicon nanowires.
    Hannon JB, Kodambaka S, Ross FM, Tromp RM.
    Nature; 2006 Mar 02; 440(7080):69-71. PubMed ID: 16452928
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