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279 related items for PubMed ID: 20173974

  • 1. Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).
    Cho CY, Lee JB, Lee SJ, Han SH, Park TY, Kim JW, Kim YC, Park SJ.
    Opt Express; 2010 Jan 18; 18(2):1462-8. PubMed ID: 20173974
    [Abstract] [Full Text] [Related]

  • 2. High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.
    Ryu JH, Kim HY, Kim HK, Katharria YS, Han N, Kang JH, Park YJ, Han M, Ryu BD, Ko KB, Suh EK, Hong CH.
    Opt Express; 2012 Apr 23; 20(9):9999-10003. PubMed ID: 22535092
    [Abstract] [Full Text] [Related]

  • 3. Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes.
    Park YJ, Kim HY, Ryu JH, Kim HK, Kang JH, Han N, Han M, Jeong H, Jeong MS, Hong CH.
    Opt Express; 2011 Jan 31; 19(3):2029-36. PubMed ID: 21369019
    [Abstract] [Full Text] [Related]

  • 4. Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.
    Chen JT, Lai WC, Kao YJ, Yang YY, Sheu JK.
    Opt Express; 2012 Feb 27; 20(5):5689-95. PubMed ID: 22418376
    [Abstract] [Full Text] [Related]

  • 5. MQWs InGaN/GaN LED with embedded micro-mirror array in the epitaxial-lateral-overgrowth gallium nitride for light extraction enhancement.
    Huang CY, Ku HM, Liao CZ, Chao S.
    Opt Express; 2010 May 10; 18(10):10674-84. PubMed ID: 20588920
    [Abstract] [Full Text] [Related]

  • 6. Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.
    Son JH, Lee JL.
    Opt Express; 2010 Mar 15; 18(6):5466-71. PubMed ID: 20389563
    [Abstract] [Full Text] [Related]

  • 7. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.
    Zhang ZH, Tan ST, Liu W, Ju Z, Zheng K, Kyaw Z, Ji Y, Hasanov N, Sun XW, Demir HV.
    Opt Express; 2013 Feb 25; 21(4):4958-69. PubMed ID: 23482028
    [Abstract] [Full Text] [Related]

  • 8. Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.
    Jia C, Yu T, Lu H, Zhong C, Sun Y, Tong Y, Zhang G.
    Opt Express; 2013 Apr 08; 21(7):8444-9. PubMed ID: 23571934
    [Abstract] [Full Text] [Related]

  • 9. Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.
    Seo YG, Baik KH, Song H, Son JS, Oh K, Hwang SM.
    Opt Express; 2011 Jul 04; 19(14):12919-24. PubMed ID: 21747444
    [Abstract] [Full Text] [Related]

  • 10. Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer.
    Jang LW, Ju JW, Jeon DW, Park JW, Polyakov AY, Lee SJ, Baek JH, Lee SM, Cho YH, Lee IH.
    Opt Express; 2012 Mar 12; 20(6):6036-41. PubMed ID: 22418481
    [Abstract] [Full Text] [Related]

  • 11. The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes.
    Jang HW, Ryu SW, Yu HK, Lee S, Lee JL.
    Nanotechnology; 2010 Jan 15; 21(2):025203. PubMed ID: 19955615
    [Abstract] [Full Text] [Related]

  • 12. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.
    Kyaw Z, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.
    Opt Express; 2014 Jan 13; 22(1):809-16. PubMed ID: 24515040
    [Abstract] [Full Text] [Related]

  • 13. Vertical InGaN light-emitting diodes with a sapphire-face-up structure.
    Yang YC, Sheu JK, Lee ML, Tu SJ, Huang FW, Lai WC, Hon S, Ko TK.
    Opt Express; 2012 Jan 02; 20(1):A119-24. PubMed ID: 22379672
    [Abstract] [Full Text] [Related]

  • 14. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.
    Wei T, Kong Q, Wang J, Li J, Zeng Y, Wang G, Li J, Liao Y, Yi F.
    Opt Express; 2011 Jan 17; 19(2):1065-71. PubMed ID: 21263645
    [Abstract] [Full Text] [Related]

  • 15. Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.
    Sun B, Zhao L, Wei T, Yi X, Liu Z, Wang G, Li J, Yi F.
    Opt Express; 2012 Aug 13; 20(17):18537-44. PubMed ID: 23038492
    [Abstract] [Full Text] [Related]

  • 16. Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs.
    Römer F, Witzigmann B.
    Opt Express; 2014 Oct 20; 22 Suppl 6():A1440-52. PubMed ID: 25607301
    [Abstract] [Full Text] [Related]

  • 17. Evaluation of InGaN/GaN light-emitting diodes of circular geometry.
    Wang XH, Fu WY, Lai PT, Choi HW.
    Opt Express; 2009 Dec 07; 17(25):22311-9. PubMed ID: 20052154
    [Abstract] [Full Text] [Related]

  • 18. Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.
    Kang ES, Ju JW, Kim JS, Ahn HK, Lee JK, Kim JH, Shin DC, Lee IH.
    J Nanosci Nanotechnol; 2007 Nov 07; 7(11):4053-6. PubMed ID: 18047117
    [Abstract] [Full Text] [Related]

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