These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

160 related items for PubMed ID: 20373788

  • 1. Charge noise in graphene transistors.
    Heller I, Chatoor S, Männik J, Zevenbergen MA, Oostinga JB, Morpurgo AF, Dekker C, Lemay SG.
    Nano Lett; 2010 May 12; 10(5):1563-7. PubMed ID: 20373788
    [Abstract] [Full Text] [Related]

  • 2. Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors.
    Fried JP, Bian X, Swett JL, Kravchenko II, Briggs GAD, Mol JA.
    Nanoscale; 2020 Jan 02; 12(2):871-876. PubMed ID: 31833518
    [Abstract] [Full Text] [Related]

  • 3. Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.
    Farmer DB, Chiu HY, Lin YM, Jenkins KA, Xia F, Avouris P.
    Nano Lett; 2009 Dec 02; 9(12):4474-8. PubMed ID: 19883119
    [Abstract] [Full Text] [Related]

  • 4. Charge noise in liquid-gated single-wall carbon nanotube transistors.
    Männik J, Heller I, Janssens AM, Lemay SG, Dekker C.
    Nano Lett; 2008 Feb 02; 8(2):685-8. PubMed ID: 18217786
    [Abstract] [Full Text] [Related]

  • 5. Determination of the Thermal Noise Limit of Graphene Biotransistors.
    Crosser MS, Brown MA, McEuen PL, Minot ED.
    Nano Lett; 2015 Aug 12; 15(8):5404-7. PubMed ID: 26176844
    [Abstract] [Full Text] [Related]

  • 6. Operation of graphene transistors at gigahertz frequencies.
    Lin YM, Jenkins KA, Valdes-Garcia A, Small JP, Farmer DB, Avouris P.
    Nano Lett; 2009 Jan 12; 9(1):422-6. PubMed ID: 19099364
    [Abstract] [Full Text] [Related]

  • 7. n-Type behavior of graphene supported on Si/SiO(2) substrates.
    Romero HE, Shen N, Joshi P, Gutierrez HR, Tadigadapa SA, Sofo JO, Eklund PC.
    ACS Nano; 2008 Oct 28; 2(10):2037-44. PubMed ID: 19206449
    [Abstract] [Full Text] [Related]

  • 8. Random-telegraph-signal noise and device variability in ballistic nanotube transistors.
    Wang NP, Heinze S, Tersoff J.
    Nano Lett; 2007 Apr 28; 7(4):910-3. PubMed ID: 17346090
    [Abstract] [Full Text] [Related]

  • 9. Transfer-free batch fabrication of single layer graphene transistors.
    Levendorf MP, Ruiz-Vargas CS, Garg S, Park J.
    Nano Lett; 2009 Dec 28; 9(12):4479-83. PubMed ID: 19860406
    [Abstract] [Full Text] [Related]

  • 10. High-performance top-gated graphene-nanoribbon transistors using zirconium oxide nanowires as high-dielectric-constant gate dielectrics.
    Liao L, Bai J, Lin YC, Qu Y, Huang Y, Duan X.
    Adv Mater; 2010 May 04; 22(17):1941-5. PubMed ID: 20526997
    [No Abstract] [Full Text] [Related]

  • 11. Strong suppression of electrical noise in bilayer graphene nanodevices.
    Lin YM, Avouris P.
    Nano Lett; 2008 Aug 04; 8(8):2119-25. PubMed ID: 18298094
    [Abstract] [Full Text] [Related]

  • 12.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 13. Suspended graphene sensors with improved signal and reduced noise.
    Cheng Z, Li Q, Li Z, Zhou Q, Fang Y.
    Nano Lett; 2010 May 12; 10(5):1864-8. PubMed ID: 20373779
    [Abstract] [Full Text] [Related]

  • 14. Gate coupling and charge distribution in nanowire field effect transistors.
    Khanal DR, Wu J.
    Nano Lett; 2007 Sep 12; 7(9):2778-83. PubMed ID: 17718588
    [Abstract] [Full Text] [Related]

  • 15. Noise Analysis of Monolayer Graphene Nanopores.
    Zhang ZY, Deng YS, Tian HB, Yan H, Cui HL, Wang DQ.
    Int J Mol Sci; 2018 Sep 06; 19(9):. PubMed ID: 30200591
    [Abstract] [Full Text] [Related]

  • 16. Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory.
    Han SJ, Reddy D, Carpenter GD, Franklin AD, Jenkins KA.
    ACS Nano; 2012 Jun 26; 6(6):5220-6. PubMed ID: 22582702
    [Abstract] [Full Text] [Related]

  • 17. Adsorption of ammonia on graphene.
    Romero HE, Joshi P, Gupta AK, Gutierrez HR, Cole MW, Tadigadapa SA, Eklund PC.
    Nanotechnology; 2009 Jun 17; 20(24):245501. PubMed ID: 19468162
    [Abstract] [Full Text] [Related]

  • 18. Stretchable graphene transistors with printed dielectrics and gate electrodes.
    Lee SK, Kim BJ, Jang H, Yoon SC, Lee C, Hong BH, Rogers JA, Cho JH, Ahn JH.
    Nano Lett; 2011 Nov 09; 11(11):4642-6. PubMed ID: 21973013
    [Abstract] [Full Text] [Related]

  • 19. Mobility-dependent low-frequency noise in graphene field-effect transistors.
    Zhang Y, Mendez EE, Du X.
    ACS Nano; 2011 Oct 25; 5(10):8124-30. PubMed ID: 21913642
    [Abstract] [Full Text] [Related]

  • 20. Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.
    Wu Y, Zou J, Huo S, Lu H, Kong Y, Chen T, Wu W, Xu J.
    J Nanosci Nanotechnol; 2015 Aug 25; 15(8):5706-10. PubMed ID: 26369142
    [Abstract] [Full Text] [Related]

    Page: [Next] [New Search]
    of 8.