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Journal Abstract Search

167 related items for PubMed ID: 20438101

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  • 3. Kelvin probe force microscopy for conducting nanobits of NiO thin films.
    Son JY, Shin YH, Kim H, Cho JH, Jang H.
    Nanotechnology; 2010 May 28; 21(21):215704. PubMed ID: 20431198
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  • 4. Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories.
    Ielmini D, Nardi F, Cagli C.
    Nanotechnology; 2011 Jun 24; 22(25):254022. PubMed ID: 21572207
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  • 5. Aluminum electrode modulated bipolar resistive switching of Al/fuel-assisted NiOx/ITO memory devices modeled with a dual-oxygen-reservoir structure.
    Chiang KK, Chen JS, Wu JJ.
    ACS Appl Mater Interfaces; 2012 Aug 24; 4(8):4237-45. PubMed ID: 22769023
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  • 8. Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates.
    Zhao L, Lu Z, Zhang F, Tian G, Song X, Li Z, Huang K, Zhang Z, Qin M, SujuanWu, Lu X, Zeng M, Gao X, Dai J, Liu JM.
    Sci Rep; 2015 Apr 08; 5():9680. PubMed ID: 25853937
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  • 9. Interface-modified unipolar resistive random access memory (RRAM) structure for low-power application.
    Ryoo KC, Oh JH, Jung S, Jeong H, Park BG.
    J Nanosci Nanotechnol; 2012 Jul 08; 12(7):5263-9. PubMed ID: 22966555
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  • 10. Resistance random access memory based on a thin film of CdS nanocrystals prepared via colloidal synthesis.
    Ju YC, Kim S, Seong TG, Nahm S, Chung H, Hong K, Kim W.
    Small; 2012 Sep 24; 8(18):2849-55. PubMed ID: 22730193
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  • 11. Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.
    Cagli C, Nardi F, Harteneck B, Tan Z, Zhang Y, Ielmini D.
    Small; 2011 Oct 17; 7(20):2899-905. PubMed ID: 21874659
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  • 12. Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.
    Magyari-Köpe B, Tendulkar M, Park SG, Lee HD, Nishi Y.
    Nanotechnology; 2011 Jun 24; 22(25):254029. PubMed ID: 21572196
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  • 13. Resistive switching and electrical control of ferromagnetism in a Ag/HfO₂/Nb:SrTiO₃/Ag resistive random access memory (RRAM) device at room temperature.
    Ren S, Zhu G, Xie J, Bu J, Qin H, Hu J.
    J Phys Condens Matter; 2016 Feb 10; 28(5):056001. PubMed ID: 26761365
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  • 15. Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.
    Li Y, Long S, Lv H, Liu Q, Wang Y, Zhang S, Lian W, Wang M, Zhang K, Xie H, Liu S, Liu M.
    Nanotechnology; 2011 Jun 24; 22(25):254028. PubMed ID: 21572216
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  • 19. Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory.
    Acharya SK, Nallagatla RV, Togibasa O, Lee BW, Liu C, Jung CU, Park BH, Park JY, Cho Y, Kim DW, Jo J, Kwon DH, Kim M, Hwang CS, Chae SC.
    ACS Appl Mater Interfaces; 2016 Mar 24; 8(12):7902-11. PubMed ID: 26955744
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  • 20. Low-power multilevel resistive switching inβ-Ga2O3based RRAM devices.
    Velpula RT, Jain B, Nguyen HPT.
    Nanotechnology; 2022 Dec 02; 34(7):. PubMed ID: 36399780
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