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Journal Abstract Search

407 related items for PubMed ID: 20524681

  • 61. Whispering gallery mode lasing from zinc oxide hexagonal nanodisks.
    Gargas DJ, Moore MC, Ni A, Chang SW, Zhang Z, Chuang SL, Yang P.
    ACS Nano; 2010 Jun 22; 4(6):3270-6. PubMed ID: 20415461
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  • 62. Single carbon nanotube transistor at GHz frequency.
    Chaste J, Lechner L, Morfin P, Fève G, Kontos T, Berroir JM, Glattli DC, Happy H, Hakonen P, Plaçais B.
    Nano Lett; 2008 Feb 22; 8(2):525-8. PubMed ID: 18229967
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  • 63. Inkjet printed, high mobility inorganic-oxide field effect transistors processed at room temperature.
    Dasgupta S, Kruk R, Mechau N, Hahn H.
    ACS Nano; 2011 Dec 27; 5(12):9628-38. PubMed ID: 22077094
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  • 64. Doping dependent crystal structures and optoelectronic properties of n-type CdSe:Ga nanowries.
    Hu Z, Zhang X, Xie C, Wu C, Zhang X, Bian L, Wu Y, Wang L, Zhang Y, Jie J.
    Nanoscale; 2011 Nov 27; 3(11):4798-803. PubMed ID: 21952747
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  • 65. Centimeter-long and large-scale micropatterns of reduced graphene oxide films: fabrication and sensing applications.
    He Q, Sudibya HG, Yin Z, Wu S, Li H, Boey F, Huang W, Chen P, Zhang H.
    ACS Nano; 2010 Jun 22; 4(6):3201-8. PubMed ID: 20441213
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  • 66. Correlating the nanostructure and electronic properties of InAs nanowires.
    Schroer MD, Petta JR.
    Nano Lett; 2010 May 12; 10(5):1618-22. PubMed ID: 20384350
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  • 67. Fabrication process of carbon nanotube field effect transistors using atomic layer deposition passivation for biosensors.
    Nakashima Y, Ohno Y, Kishimoto S, Okochi M, Honda H, Mizutani T.
    J Nanosci Nanotechnol; 2010 Jun 12; 10(6):3805-9. PubMed ID: 20355371
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  • 68. Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping.
    Yan Q, Huang B, Yu J, Zheng F, Zang J, Wu J, Gu BL, Liu F, Duan W.
    Nano Lett; 2007 Jun 12; 7(6):1469-73. PubMed ID: 17461605
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  • 69. A carbon nanotube field effect transistor with a suspended nanotube gate.
    Tarakanov YA, Kinaret JM.
    Nano Lett; 2007 Aug 12; 7(8):2291-4. PubMed ID: 17604404
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  • 70. Three-dimensional etching of silicon for the fabrication of low-dimensional and suspended devices.
    Walavalkar SS, Homyk AP, Henry MD, Scherer A.
    Nanoscale; 2013 Feb 07; 5(3):927-31. PubMed ID: 23292113
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  • 71. High-performance single nanowire tunnel diodes.
    Wallentin J, Persson JM, Wagner JB, Samuelson L, Deppert K, Borgström MT.
    Nano Lett; 2010 Mar 10; 10(3):974-9. PubMed ID: 20163125
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  • 72. Nanoscale Kirkendall effect for the synthesis of Bi2MoO6 boxes via a facile solution-phase method.
    Shang M, Wang W, Ren J, Sun S, Zhang L.
    Nanoscale; 2011 Apr 10; 3(4):1474-6. PubMed ID: 21380416
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  • 73. Few electron limit of n-type metal oxide semiconductor single electron transistors.
    Prati E, De Michielis M, Belli M, Cocco S, Fanciulli M, Kotekar-Patil D, Ruoff M, Kern DP, Wharam DA, Verduijn J, Tettamanzi GC, Rogge S, Roche B, Wacquez R, Jehl X, Vinet M, Sanquer M.
    Nanotechnology; 2012 Jun 01; 23(21):215204. PubMed ID: 22552118
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  • 74. Misorientation control and functionality design of nanopillars in self-assembled perovskite-spinel heteroepitaxial nanostructures.
    Liao SC, Tsai PY, Liang CW, Liu HJ, Yang JC, Lin SJ, Lai CH, Chu YH.
    ACS Nano; 2011 May 24; 5(5):4118-22. PubMed ID: 21466204
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  • 75. Operation of graphene transistors at gigahertz frequencies.
    Lin YM, Jenkins KA, Valdes-Garcia A, Small JP, Farmer DB, Avouris P.
    Nano Lett; 2009 Jan 24; 9(1):422-6. PubMed ID: 19099364
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  • 76. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.
    Smith C, Qaisi R, Liu Z, Yu Q, Hussain MM.
    ACS Nano; 2013 Jul 23; 7(7):5818-23. PubMed ID: 23777434
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  • 77. Fully transparent thin-film transistor devices based on SnO2 nanowires.
    Dattoli EN, Wan Q, Guo W, Chen Y, Pan X, Lu W.
    Nano Lett; 2007 Aug 23; 7(8):2463-9. PubMed ID: 17595151
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  • 78. Enrichment of semiconducting single-walled carbon nanotubes by carbothermic reaction for use in all-nanotube field effect transistors.
    Li S, Liu C, Hou PX, Sun DM, Cheng HM.
    ACS Nano; 2012 Nov 27; 6(11):9657-61. PubMed ID: 23025663
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  • 79. TiO₂ nanotip arrays: anodic fabrication and field-emission properties.
    Liang J, Zhang G.
    ACS Appl Mater Interfaces; 2012 Nov 27; 4(11):6053-61. PubMed ID: 23106725
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  • 80. Wear-resistant diamond nanoprobe tips with integrated silicon heater for tip-based nanomanufacturing.
    Fletcher PC, Felts JR, Dai Z, Jacobs TD, Zeng H, Lee W, Sheehan PE, Carlisle JA, Carpick RW, King WP.
    ACS Nano; 2010 Jun 22; 4(6):3338-44. PubMed ID: 20481445
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