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Journal Abstract Search

171 related items for PubMed ID: 20526997

  • 1. High-performance top-gated graphene-nanoribbon transistors using zirconium oxide nanowires as high-dielectric-constant gate dielectrics.
    Liao L, Bai J, Lin YC, Qu Y, Huang Y, Duan X.
    Adv Mater; 2010 May 04; 22(17):1941-5. PubMed ID: 20526997
    [No Abstract] [Full Text] [Related]

  • 2. Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.
    Liao L, Bai J, Cheng R, Lin YC, Jiang S, Huang Y, Duan X.
    Nano Lett; 2010 May 12; 10(5):1917-21. PubMed ID: 20380441
    [Abstract] [Full Text] [Related]

  • 3. Gate-defined graphene double quantum dot and excited state spectroscopy.
    Liu XL, Hug D, Vandersypen LM.
    Nano Lett; 2010 May 12; 10(5):1623-7. PubMed ID: 20377196
    [Abstract] [Full Text] [Related]

  • 4. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
    Yoon A, Hong WK, Lee T.
    J Nanosci Nanotechnol; 2007 Nov 12; 7(11):4101-5. PubMed ID: 18047128
    [Abstract] [Full Text] [Related]

  • 5. Coplanar-gate transparent graphene transistors and inverters on plastic.
    Kim BJ, Lee SK, Kang MS, Ahn JH, Cho JH.
    ACS Nano; 2012 Oct 23; 6(10):8646-51. PubMed ID: 22954200
    [Abstract] [Full Text] [Related]

  • 6. Operation of graphene transistors at gigahertz frequencies.
    Lin YM, Jenkins KA, Valdes-Garcia A, Small JP, Farmer DB, Avouris P.
    Nano Lett; 2009 Jan 23; 9(1):422-6. PubMed ID: 19099364
    [Abstract] [Full Text] [Related]

  • 7. High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors.
    Liao L, Bai J, Qu Y, Lin YC, Li Y, Huang Y, Duan X.
    Proc Natl Acad Sci U S A; 2010 Apr 13; 107(15):6711-5. PubMed ID: 20308584
    [Abstract] [Full Text] [Related]

  • 8. Graphene-graphite oxide field-effect transistors.
    Standley B, Mendez A, Schmidgall E, Bockrath M.
    Nano Lett; 2012 Mar 14; 12(3):1165-9. PubMed ID: 22380722
    [Abstract] [Full Text] [Related]

  • 9. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.
    Smith C, Qaisi R, Liu Z, Yu Q, Hussain MM.
    ACS Nano; 2013 Jul 23; 7(7):5818-23. PubMed ID: 23777434
    [Abstract] [Full Text] [Related]

  • 10. Stretchable graphene transistors with printed dielectrics and gate electrodes.
    Lee SK, Kim BJ, Jang H, Yoon SC, Lee C, Hong BH, Rogers JA, Cho JH, Ahn JH.
    Nano Lett; 2011 Nov 09; 11(11):4642-6. PubMed ID: 21973013
    [Abstract] [Full Text] [Related]

  • 11. Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.
    Farmer DB, Chiu HY, Lin YM, Jenkins KA, Xia F, Avouris P.
    Nano Lett; 2009 Dec 09; 9(12):4474-8. PubMed ID: 19883119
    [Abstract] [Full Text] [Related]

  • 12. Quantum capacitance limited vertical scaling of graphene field-effect transistor.
    Xu H, Zhang Z, Wang Z, Wang S, Liang X, Peng LM.
    ACS Nano; 2011 Mar 22; 5(3):2340-7. PubMed ID: 21323320
    [Abstract] [Full Text] [Related]

  • 13. A novel method for fabricating sub-16 nm footprint T-gate nanoimprint molds.
    Peng C, Liang X, Chou SY.
    Nanotechnology; 2009 May 06; 20(18):185302. PubMed ID: 19420609
    [Abstract] [Full Text] [Related]

  • 14. Adsorption of ammonia on graphene.
    Romero HE, Joshi P, Gupta AK, Gutierrez HR, Cole MW, Tadigadapa SA, Eklund PC.
    Nanotechnology; 2009 Jun 17; 20(24):245501. PubMed ID: 19468162
    [Abstract] [Full Text] [Related]

  • 15. High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel.
    Liu J, Buchholz DB, Chang RP, Facchetti A, Marks TJ.
    Adv Mater; 2010 Jun 04; 22(21):2333-7. PubMed ID: 20491089
    [No Abstract] [Full Text] [Related]

  • 16. Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods.
    Jeon Y, Kang J, Lee M, Moon T, Kim S.
    J Nanosci Nanotechnol; 2013 May 04; 13(5):3350-3. PubMed ID: 23858857
    [Abstract] [Full Text] [Related]

  • 17. State-of-the-art graphene high-frequency electronics.
    Wu Y, Jenkins KA, Valdes-Garcia A, Farmer DB, Zhu Y, Bol AA, Dimitrakopoulos C, Zhu W, Xia F, Avouris P, Lin YM.
    Nano Lett; 2012 Jun 13; 12(6):3062-7. PubMed ID: 22563820
    [Abstract] [Full Text] [Related]

  • 18. Realization of a silicon nanowire vertical surround-gate field-effect transistor.
    Schmidt V, Riel H, Senz S, Karg S, Riess W, Gösele U.
    Small; 2006 Jan 13; 2(1):85-8. PubMed ID: 17193560
    [No Abstract] [Full Text] [Related]

  • 19. Gate-defined confinement in bilayer graphene-hexagonal boron nitride hybrid devices.
    Goossens AS, Driessen SC, Baart TA, Watanabe K, Taniguchi T, Vandersypen LM.
    Nano Lett; 2012 Sep 12; 12(9):4656-60. PubMed ID: 22906072
    [Abstract] [Full Text] [Related]

  • 20. Gate coupling and charge distribution in nanowire field effect transistors.
    Khanal DR, Wu J.
    Nano Lett; 2007 Sep 12; 7(9):2778-83. PubMed ID: 17718588
    [Abstract] [Full Text] [Related]

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