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Journal Abstract Search

164 related items for PubMed ID: 20662001

  • 1. Coexistence of vapor-liquid-solid and vapor-solid-solid growth modes in Pd-assisted InAs nanowires.
    Heun S, Radha B, Ercolani D, Kulkarni GU, Rossi F, Grillo V, Salviati G, Beltram F, Sorba L.
    Small; 2010 Sep 06; 6(17):1935-41. PubMed ID: 20662001
    [Abstract] [Full Text] [Related]

  • 2. Defect-free <110> zinc-blende structured InAs nanowires catalyzed by palladium.
    Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Tan HH, Jagadish C, Zou J.
    Nano Lett; 2012 Nov 14; 12(11):5744-9. PubMed ID: 23030768
    [Abstract] [Full Text] [Related]

  • 3. Growth of vertical InAs nanowires on heterostructured substrates.
    Roddaro S, Caroff P, Biasiol G, Rossi F, Bocchi C, Nilsson K, Fröberg L, Wagner JB, Samuelson L, Wernersson LE, Sorba L.
    Nanotechnology; 2009 Jul 15; 20(28):285303. PubMed ID: 19546499
    [Abstract] [Full Text] [Related]

  • 4. High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy.
    Caroff P, Wagner JB, Dick KA, Nilsson HA, Jeppsson M, Deppert K, Samuelson L, Wallenberg LR, Wernersson LE.
    Small; 2008 Jul 15; 4(7):878-82. PubMed ID: 18576282
    [No Abstract] [Full Text] [Related]

  • 5. In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires.
    Heiss M, Ketterer B, Uccelli E, Morante JR, Arbiol J, Fontcuberta i Morral A.
    Nanotechnology; 2011 May 13; 22(19):195601. PubMed ID: 21430322
    [Abstract] [Full Text] [Related]

  • 6. Structure, growth kinetics, and ledge flow during vapor-solid-solid growth of copper-catalyzed silicon nanowires.
    Wen CY, Reuter MC, Tersoff J, Stach EA, Ross FM.
    Nano Lett; 2010 Feb 10; 10(2):514-9. PubMed ID: 20041666
    [Abstract] [Full Text] [Related]

  • 7. Friction measurements of InAs nanowires on silicon nitride by AFM manipulation.
    Conache G, Gray SM, Ribayrol A, Fröberg LE, Samuelson L, Pettersson H, Montelius L.
    Small; 2009 Feb 10; 5(2):203-7. PubMed ID: 19058284
    [No Abstract] [Full Text] [Related]

  • 8. Single crystalline and core-shell indium-catalyzed germanium nanowires-a systematic thermal CVD growth study.
    Xiang Y, Cao L, Conesa-Boj S, Estrade S, Arbiol J, Peiro F, Heiss M, Zardo I, Morante JR, Brongersma ML, Fontcuberta I Morral A.
    Nanotechnology; 2009 Jun 17; 20(24):245608. PubMed ID: 19471084
    [Abstract] [Full Text] [Related]

  • 9. Transport coefficients of InAs nanowires as a function of diameter.
    Dayeh SA, Yu ET, Wang D.
    Small; 2009 Jan 17; 5(1):77-81. PubMed ID: 19040215
    [No Abstract] [Full Text] [Related]

  • 10. Excess indium and substrate effects on the growth of InAs nanowires.
    Dayeh SA, Yu ET, Wang D.
    Small; 2007 Oct 17; 3(10):1683-7. PubMed ID: 17806087
    [No Abstract] [Full Text] [Related]

  • 11. Growth of ZnO nanowires catalyzed by size-dependent melting of Au nanoparticles.
    Petersen EW, Likovich EM, Russell KJ, Narayanamurti V.
    Nanotechnology; 2009 Oct 07; 20(40):405603. PubMed ID: 19738315
    [Abstract] [Full Text] [Related]

  • 12. Au-free epitaxial growth of InAs nanowires.
    Mandl B, Stangl J, Mårtensson T, Mikkelsen A, Eriksson J, Karlsson LS, Bauer GU, Samuelson L, Seifert W.
    Nano Lett; 2006 Aug 07; 6(8):1817-21. PubMed ID: 16895379
    [Abstract] [Full Text] [Related]

  • 13. Vapor-liquid-solid growth of silicon nanowires using organosilane as precursor.
    Yang HJ, Yuan FW, Tuan HY.
    Chem Commun (Camb); 2010 Sep 07; 46(33):6105-7. PubMed ID: 20657918
    [Abstract] [Full Text] [Related]

  • 14. InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning.
    Huang Y, Kim TW, Xiong S, Mawst LJ, Kuech TF, Nealey PF, Dai Y, Wang Z, Guo W, Forbes D, Hubbard SM, Nesnidal M.
    Nano Lett; 2013 Sep 07; 13(12):5979-84. PubMed ID: 24274630
    [Abstract] [Full Text] [Related]

  • 15. From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires.
    Potts H, Friedl M, Amaduzzi F, Tang K, Tütüncüoglu G, Matteini F, Alarcon Lladó E, McIntyre PC, Fontcuberta i Morral A.
    Nano Lett; 2016 Jan 13; 16(1):637-43. PubMed ID: 26686394
    [Abstract] [Full Text] [Related]

  • 16. Evolution of epitaxial InAs nanowires on GaAs 111B.
    Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C.
    Small; 2009 Mar 13; 5(3):366-9. PubMed ID: 19152357
    [No Abstract] [Full Text] [Related]

  • 17. Scanned probe imaging of quantum dots inside InAs nanowires.
    Bleszynski AC, Zwanenburg FA, Westervelt RM, Roest AL, Bakkers EP, Kouwenhoven LP.
    Nano Lett; 2007 Sep 13; 7(9):2559-62. PubMed ID: 17691848
    [Abstract] [Full Text] [Related]

  • 18. An in-plane solid-liquid-solid growth mode for self-avoiding lateral silicon nanowires.
    Yu L, Alet PJ, Picardi G, Roca i Cabarrocas P.
    Phys Rev Lett; 2009 Mar 27; 102(12):125501. PubMed ID: 19392293
    [Abstract] [Full Text] [Related]

  • 19. The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
    Thelander C, Dick KA, Borgström MT, Fröberg LE, Caroff P, Nilsson HA, Samuelson L.
    Nanotechnology; 2010 May 21; 21(20):205703. PubMed ID: 20413840
    [Abstract] [Full Text] [Related]

  • 20. Kinetic control of self-catalyzed indium phosphide nanowires, nanocones, and nanopillars.
    Woo RL, Gao L, Goel N, Hudait MK, Wang KL, Kodambaka S, Hicks RF.
    Nano Lett; 2009 Jun 21; 9(6):2207-11. PubMed ID: 19419156
    [Abstract] [Full Text] [Related]

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