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Journal Abstract Search

157 related items for PubMed ID: 20695446

  • 1. Multimode Fabry-Perot conductance oscillations in suspended stacking-faults-free InAs nanowires.
    Kretinin AV, Popovitz-Biro R, Mahalu D, Shtrikman H.
    Nano Lett; 2010 Sep 08; 10(9):3439-45. PubMed ID: 20695446
    [Abstract] [Full Text] [Related]

  • 2.
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  • 3. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy.
    So H, Pan D, Li L, Zhao J.
    Nanotechnology; 2017 Mar 01; 28(13):135704. PubMed ID: 28256450
    [Abstract] [Full Text] [Related]

  • 4. Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions.
    Li S, Kang N, Fan DX, Wang LB, Huang YQ, Caroff P, Xu HQ.
    Sci Rep; 2016 Apr 22; 6():24822. PubMed ID: 27102689
    [Abstract] [Full Text] [Related]

  • 5. Electronic phase coherence in InAs nanowires.
    Blömers Ch, Lepsa MI, Luysberg M, Grützmacher D, Lüth H, Schäpers T.
    Nano Lett; 2011 Sep 14; 11(9):3550-6. PubMed ID: 21848307
    [Abstract] [Full Text] [Related]

  • 6. High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag-In alloy segregation.
    Liu L, Pan D, Wen L, Zhuo R, Zhao J.
    Nanotechnology; 2023 Mar 14; 34(22):. PubMed ID: 36827703
    [Abstract] [Full Text] [Related]

  • 7. Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy.
    Koblmüller G, Hertenberger S, Vizbaras K, Bichler M, Bao F, Zhang JP, Abstreiter G.
    Nanotechnology; 2010 Sep 10; 21(36):365602. PubMed ID: 20702932
    [Abstract] [Full Text] [Related]

  • 8. MBE growth of Al/InAs and Nb/InAs superconducting hybrid nanowire structures.
    Güsken NA, Rieger T, Zellekens P, Bennemann B, Neumann E, Lepsa MI, Schäpers T, Grützmacher D.
    Nanoscale; 2017 Nov 09; 9(43):16735-16741. PubMed ID: 29068026
    [Abstract] [Full Text] [Related]

  • 9. Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell.
    Khelifi W, Coinon C, Berthe M, Troadec D, Patriarche G, Wallart X, Grandidier B, Desplanque L.
    Nanotechnology; 2023 Apr 12; 34(26):. PubMed ID: 36975178
    [Abstract] [Full Text] [Related]

  • 10. Fabry-Pérot interferometry with gate-tunable 3D topological insulator nanowires.
    Osca J, Moors K, Sorée B, Serra L.
    Nanotechnology; 2021 Aug 06; 32(43):. PubMed ID: 34284353
    [Abstract] [Full Text] [Related]

  • 11. InAs/InSb nanowire heterostructures grown by chemical beam epitaxy.
    Ercolani D, Rossi F, Li A, Roddaro S, Grillo V, Salviati G, Beltram F, Sorba L.
    Nanotechnology; 2009 Dec 16; 20(50):505605. PubMed ID: 19907063
    [Abstract] [Full Text] [Related]

  • 12. Role of liquid indium in the structural purity of wurtzite InAs nanowires that grow on Si(111).
    Biermanns A, Dimakis E, Davydok A, Sasaki T, Geelhaar L, Takahasi M, Pietsch U.
    Nano Lett; 2014 Dec 10; 14(12):6878-83. PubMed ID: 25400142
    [Abstract] [Full Text] [Related]

  • 13. Crystal structure and transport in merged InAs nanowires MBE grown on (001) InAs.
    Kang JH, Cohen Y, Ronen Y, Heiblum M, Buczko R, Kacman P, Popovitz-Biro R, Shtrikman H.
    Nano Lett; 2013 Nov 13; 13(11):5190-6. PubMed ID: 24093328
    [Abstract] [Full Text] [Related]

  • 14. Ag-catalyzed InAs nanowires grown on transferable graphite flakes.
    Meyer-Holdt J, Kanne T, Sestoft JE, Gejl A, Zeng L, Johnson E, Olsson E, Nygård J, Krogstrup P.
    Nanotechnology; 2016 Sep 09; 27(36):365603. PubMed ID: 27479073
    [Abstract] [Full Text] [Related]

  • 15. Molecular beam epitaxy growth of GaAs/InAs core-shell nanowires and fabrication of InAs nanotubes.
    Rieger T, Luysberg M, Schäpers T, Grützmacher D, Lepsa MI.
    Nano Lett; 2012 Nov 14; 12(11):5559-64. PubMed ID: 23030380
    [Abstract] [Full Text] [Related]

  • 16. One-dimensional quantum confinement effect modulated thermoelectric properties in InAs nanowires.
    Tian Y, Sakr MR, Kinder JM, Liang D, Macdonald MJ, Qiu RL, Gao HJ, Gao XP.
    Nano Lett; 2012 Dec 12; 12(12):6492-7. PubMed ID: 23167670
    [Abstract] [Full Text] [Related]

  • 17. Dry transfer method for suspended graphene on lift-off-resist: simple ballistic devices with Fabry-Pérot interference.
    Liu Y, Abhilash TS, Laitinen A, Tan Z, Liu GJ, Hakonen P.
    Nanotechnology; 2019 Jun 21; 30(25):25LT01. PubMed ID: 30840930
    [Abstract] [Full Text] [Related]

  • 18. Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite.
    Anyebe EA, Sanchez AM, Hindmarsh S, Chen X, Shao J, Rajpalke MK, Veal TD, Robinson BJ, Kolosov O, Anderson F, Sundaram R, Wang ZM, Falko V, Zhuang Q.
    Nano Lett; 2015 Jul 08; 15(7):4348-55. PubMed ID: 26086785
    [Abstract] [Full Text] [Related]

  • 19. Anisotropic phase coherence in GaAs/InAs core/shell nanowires.
    Haas F, Zellekens P, Wenz T, Demarina N, Rieger T, Lepsa MI, Grützmacher D, Lüth H, Schäpers T.
    Nanotechnology; 2017 Nov 03; 28(44):445202. PubMed ID: 28840851
    [Abstract] [Full Text] [Related]

  • 20. Ballistic PbTe Nanowire Devices.
    Wang Y, Chen F, Song W, Geng Z, Yu Z, Yang L, Gao Y, Li R, Yang S, Miao W, Xu W, Wang Z, Xia Z, Song HD, Feng X, Wang T, Zang Y, Li L, Shang R, Xue Q, He K, Zhang H.
    Nano Lett; 2023 Dec 13; 23(23):11137-11144. PubMed ID: 37948302
    [Abstract] [Full Text] [Related]

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