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PUBMED FOR HANDHELDS

Journal Abstract Search


1356 related items for PubMed ID: 20698566

  • 1.
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  • 2. High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors.
    Kim MG, Kim HS, Ha YG, He J, Kanatzidis MG, Facchetti A, Marks TJ.
    J Am Chem Soc; 2010 Aug 04; 132(30):10352-64. PubMed ID: 20662515
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  • 3. High-performance transparent inorganic-organic hybrid thin-film n-type transistors.
    Wang L, Yoon MH, Lu G, Yang Y, Facchetti A, Marks TJ.
    Nat Mater; 2006 Nov 04; 5(11):893-900. PubMed ID: 17041583
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  • 5. Control and characterization of the structural, electrical, and optical properties of amorphous zinc-indium-tin oxide thin films.
    Buchholz DB, Liu J, Marks TJ, Zhang M, Chang RP.
    ACS Appl Mater Interfaces; 2009 Oct 04; 1(10):2147-53. PubMed ID: 20355848
    [Abstract] [Full Text] [Related]

  • 6. High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays.
    Chen PC, Shen G, Chen H, Ha YG, Wu C, Sukcharoenchoke S, Fu Y, Liu J, Facchetti A, Marks TJ, Thompson ME, Zhou C.
    ACS Nano; 2009 Nov 24; 3(11):3383-90. PubMed ID: 19842677
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  • 7. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.
    Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H.
    Nature; 2004 Nov 25; 432(7016):488-92. PubMed ID: 15565150
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  • 8. Structure-performance correlations in vapor phase deposited self-assembled nanodielectrics for organic field-effect transistors.
    DiBenedetto SA, Frattarelli DL, Facchetti A, Ratner MA, Marks TJ.
    J Am Chem Soc; 2009 Aug 12; 131(31):11080-90. PubMed ID: 19606862
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  • 9. Low-voltage organic transistors with an amorphous molecular gate dielectric.
    Halik M, Klauk H, Zschieschang U, Schmid G, Dehm C, Schütz M, Maisch S, Effenberger F, Brunnbauer M, Stellacci F.
    Nature; 2004 Oct 21; 431(7011):963-6. PubMed ID: 15496917
    [Abstract] [Full Text] [Related]

  • 10. Nanometer-scale oxide thin film transistor with potential for high-density image sensor applications.
    Jeon S, Park S, Song I, Hur JH, Park J, Kim H, Kim S, Kim S, Yin H, Chung UI, Lee E, Kim C.
    ACS Appl Mater Interfaces; 2011 Jan 21; 3(1):1-6. PubMed ID: 21171647
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  • 11. High-mobility transparent thin-film transistors with an Sb-doped SnO2 nanocrystal channel fabricated at room temperature.
    Sun J, Lu A, Wang L, Hu Y, Wan Q.
    Nanotechnology; 2009 Aug 19; 20(33):335204. PubMed ID: 19636097
    [Abstract] [Full Text] [Related]

  • 12. Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.
    Yu X, Zhou N, Smith J, Lin H, Stallings K, Yu J, Marks TJ, Facchetti A.
    ACS Appl Mater Interfaces; 2013 Aug 28; 5(16):7983-8. PubMed ID: 23876148
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  • 13.
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  • 14. Inorganic oxide core, polymer shell nanocomposite as a high K gate dielectric for flexible electronics applications.
    Maliakal A, Katz H, Cotts PM, Subramoney S, Mirau P.
    J Am Chem Soc; 2005 Oct 26; 127(42):14655-62. PubMed ID: 16231918
    [Abstract] [Full Text] [Related]

  • 15. A flexible amorphous Bi(5)Nb(3)O(15) film for the gate insulator of the low-voltage operating pentacene thin-film transistor fabricated at room temperature.
    Cho KH, Seong TG, Choi JY, Kim JS, Kwon JH, Shin SI, Chung MH, Ju BK, Nahm S.
    Langmuir; 2009 Oct 20; 25(20):12349-54. PubMed ID: 19624140
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  • 18. High-performance air-stable n-channel organic thin film transistors based on halogenated perylene bisimide semiconductors.
    Schmidt R, Oh JH, Sun YS, Deppisch M, Krause AM, Radacki K, Braunschweig H, Könemann M, Erk P, Bao Z, Würthner F.
    J Am Chem Soc; 2009 May 06; 131(17):6215-28. PubMed ID: 19354212
    [Abstract] [Full Text] [Related]

  • 19. Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications.
    Zhu LQ, Sun J, Wu GD, Zhang HL, Wan Q.
    Nanoscale; 2013 Mar 07; 5(5):1980-5. PubMed ID: 23364424
    [Abstract] [Full Text] [Related]

  • 20. Aqueous combustion synthesis of aluminum oxide thin films and application as gate dielectric in GZTO solution-based TFTs.
    Branquinho R, Salgueiro D, Santos L, Barquinha P, Pereira L, Martins R, Fortunato E.
    ACS Appl Mater Interfaces; 2014 Nov 26; 6(22):19592-9. PubMed ID: 25354332
    [Abstract] [Full Text] [Related]


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